Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
198 words
Single crystal of compound semi-conductor of groups III-V with low dislocation density, characterized in that the host crystal of compound semiconductor of groups III-V are doped with at least one isoelectronic under-impurity and at least one isoelectronic over-impurity, arithmetic average of bond length "a" and the standard bond length "a 0 " between host atoms satisfy the inequality ##EQU20## where the arithmetic average "a" of bond length is defined by ##EQU21## where "a 1 " is a tetrahedral covalent bond length between the isoelectronic under-impurity and the host atom in a two-component crystal consisting of elements same with the impurity atom and the host atom, "x 1 " is an impurity concentration of the isoelectronic under-impurity, "a 2 " is a tetrahedral covalent bond length between the isoelectronic over-impurity and the host atom in a two-component crystal consisting of elements same with the impurity atom and the host atom, "x 2 " is and impurity concentration of the isoelectronic over-impurity, and Σ signifies to sum up the succeeding values with regard to all under- or over-isoelectronic impurities if more than one impurities are doped, and the total concentration of isoelectronic impurity satisfies the inequality Σx.sub.1 +Σx.sub.2 ≧10.sup.8 atoms/cm.sup.3.
Claim 2
Dependent Claim
198 words
Single crystal of compound semi-conductor of groups III-V with low dislocation density, characterized in that the host crystal of compound semiconductor of groups III-V are doped with at least one isoelectronic under-impurity and at least one isoelectronic over-impurity, arithmetic average of bond length "a" and the standard bond length "a 0 " between host atoms satisfy the inequality ##EQU20## where the arithmetic average "a" of bond length is defined by ##EQU21## where "a 1 " is a tetrahedral covalent bond length between the isoelectronic under-impurity and the host atom in a two-component crystal consisting of elements same with the impurity atom and the host atom, "x 1 " is an impurity concentration of the isoelectronic under-impurity, "a 2 " is a tetrahedral covalent bond length between the isoelectronic over-impurity and the host atom in a two-component crystal consisting of elements same with the impurity atom and the host atom, "x 2 " is and impurity concentration of the isoelectronic over-impurity, and Σ signifies to sum up the succeeding values with regard to all under- or over-isoelectronic impurities if more than one impurities are doped, and the total concentration of isoelectronic impurity satisfies the inequality Σx.sub.1 +Σx.sub.2 ≧10.sup.8 atoms/cm.sup.3.
Claim 3
Dependent Claim
27 words
Single crystal of compound semi-conductor as claimed in claim 1, wherein the host crystal is GaAs, the isoelectronic under-impurity is B, and the isoelectronic over-impurity is In.
Claim 4
Dependent Claim
24 words
Single crystal of compound semi-conductor as claimed in claim 1, wherein an anisoelectronic impurity is doped in the host crystal besides the isoelectronic impurities.
Claim 5
Dependent Claim
32 words
Single crystal of compound semi-conductor as claimed in claim 3, wherein the host crystal is GaAs, the isoelectronic under-impurity is B, the isoelectronic over-impurity is In, and the anisoelectronic impurity is Si.
Claim 6
Dependent Claim
32 words
Single crystal of compound semi-conductor as claimed in claim 3, wherein the host crystal is InP, the isoelectronic under-impurity is Ga, the isoelectronic over-impurity is As, and the anisoelectronic impurity is S.
Claim 7
Dependent Claim
32 words
Single crystal of compound semi-conductor as claimed in claim 3, wherein the host crystal is InP, the isoelectronic under-impurity is Ga, the isoelectronic over-impurity is As and the anisoelectronic impurity is Sn.
Claim 8
Dependent Claim
32 words
Single crystal of compound semi-conductor as claimed in claim 3, wherein the host crystal is InP, the isoelectronic under-impurity is Ga, the isoelectronic over-impurity is As, and the anisoelectronic impurity is Fe.