US4213801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
Assignee: AT&T Inc
•
Filing: 1979-03-26
•
Granted: 1980-07-22
•
Expires: 1999-03-26
Abstract
Abstract Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e., adequate cohesion between the GaAs and the substrate, good electrical contact to the conducting substrate, and good nucleation of the GaAs on the substrate yielding pinhole free or near pinhole free GaAs layers composed of large grains. These properties are obtained by first depositing a very thin coating, a coating with a nominal thickness between 1000 A and 250 A, of a Group IV element, Ge, Si, or Sn, onto the conducting substrate and then depositing the GaAs over this thin layer.
Inventors
- 👤 Wilbur D. Johnston, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:13
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; H10; H10D; H10D62/00; H10D62/40; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10W; H10W70/00; H10W70/20; H10W70/24; H10W70/28; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
115 words
A supported semiconductor layer comprising an n-type layer of GaAs deposited on and forming an interface with an electrically conductive body characterized in that said layer of GaAs is a polycrystalline layer and said electrically conductive body comprises an electrically conductive substrate having deposited thereon an elemental layer of nominal thickness in the range of 1000 to 250 A, wherein said elemental layer is substantially only one element of the group consisting essentially of Ge, Sn, and Si and wherein the resistance of said interface is less than 2 ohm-cm 2 , the blocking voltage is less than 0.05 V and said n-type layer of GaAs covers at least 90% of said electrically conductive body.
Claim 2
Dependent Claim
115 words
A supported semiconductor layer comprising an n-type layer of GaAs deposited on and forming an interface with an electrically conductive body characterized in that said layer of GaAs is a polycrystalline layer and said electrically conductive body comprises an electrically conductive substrate having deposited thereon an elemental layer of nominal thickness in the range of 1000 to 250 A, wherein said elemental layer is substantially only one element of the group consisting essentially of Ge, Sn, and Si and wherein the resistance of said interface is less than 2 ohm-cm 2 , the blocking voltage is less than 0.05 V and said n-type layer of GaAs covers at least 90% of said electrically conductive body.
Claim 3
Dependent Claim
25 words
A supported semiconductor layer of claim 1 wherein said elemental layer is substantially only one element of the group consisting essentially of Ge and Sn.
Claim 4
Dependent Claim
24 words
A supported semiconductor layer of claim 2 wherein said nominal thickness of said elemental layer is in the range of 200 to 1000 A.
Claim 5
Dependent Claim
15 words
A supported semiconductor layer of claim 2 wherein said elemental layer is deposited by evaporation.
Claim 6
Dependent Claim
15 words
A supported semiconductor layer of claim 2 wherein said elemental layer is deposited by sputtering.
Claim 7
Dependent Claim
14 words
A supported semiconductor layer of claim 2 wherein said electrically conductive substrate is graphite.
Claim 8
Dependent Claim
24 words
A supported semiconductor layer of claim 2 wherein said nominal thickness of said elemental layer is in the range of 400 to 600 A.
Claim 9
Dependent Claim
14 words
A supported semiconductor layer of claim 1 wherein said elemental layer is substantially Si.
Claim 10
Dependent Claim
24 words
A supported semiconductor layer of claim 8 wherein the nominal thickness of said elemental layer is in the range of 400 to 600 A.
Claim 11
Dependent Claim
15 words
A supported semiconductor layer of claim 8 wherein said elemental layer is deposited by sputtering.
Claim 12
Dependent Claim
16 words
A supported semiconductor layer of claim 1 wherein said elemental layer is substantially composed of Ge.
Claim 13
Dependent Claim
16 words
A supported semiconductor layer of claim 1 wherein said elemental layer is substantially composed of Sn.
Claim 14
Dependent Claim
14 words
A supported semiconductor layer of claim 1 wherein said electrically conductive substrate is graphite.
Claim 15
Dependent Claim
86 words
a supported semiconductor layer comprising a conducting substrate having deposited thereon in succession (1) a 250 to 1000 A thick metal layer substantially comprising only one element of the group consisting essentially of Ge, Sn, and Si, and (2) a polycrystalline layer of n-type GaAs, wherein the resistance at the interface between said metal layer and said polycrystalline layer is less than 2 ohm-cm 2 , the blocking voltage is less than 0.05 V, and said polycrystalline layer covers at least 90% of said conducting substrate.
Claim 16
Dependent Claim
86 words
a supported semiconductor layer comprising a conducting substrate having deposited thereon in succession (1) a 250 to 1000 A thick metal layer substantially comprising only one element of the group consisting essentially of Ge, Sn, and Si, and (2) a polycrystalline layer of n-type GaAs, wherein the resistance at the interface between said metal layer and said polycrystalline layer is less than 2 ohm-cm 2 , the blocking voltage is less than 0.05 V, and said polycrystalline layer covers at least 90% of said conducting substrate.
Claim 17
Dependent Claim
13 words
A supported semiconductor layer of claim 14 wherein said conducting substrate is graphite.
Claim 18
Dependent Claim
18 words
The supported semiconductor layer of claim 11 wherein said GaAs layer covers 100% of said electrically conductive body.
Claim 19
Dependent Claim
18 words
The supported semiconductor layer of claim 12 wherein said GaAs layer covers 100% of said electrically conductive body.
References Cited (Backward Citations)
US3078328A
Cited
GB978439A
Cited
US3368125A
Cited
US3433684A
Cited
US3484312A
Cited
US3699401A
Cited
US3753804A
Cited
US4011583A
Cited
US3993533A
Cited
US3961997A
Cited
US4053350A
Cited
US4074305A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-22 | 1984-01-21 | 1984-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-22 | 1988-01-21 | 1988-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-22 | 1992-01-21 | 1992-07-22 | $7700.00 | Window Closed / Lapsed |