US4011583A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
Assignee: AT&T Inc
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Filing: 1976-05-27
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Granted: 1977-03-08
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Expires: 1996-05-27
Abstract
Abstract A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.
Inventors
- 👤 Hyman Joseph Levinstein
- 👤 Ashok Kumar Sinha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
51 words
A semiconductor device comprising a body of semiconductor material of n conductivity type comprising a group III element and group V element and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-group III element compounds and Pd-group V element compounds.
Claim 2
Dependent Claim
51 words
A semiconductor device comprising a body of semiconductor material of n conductivity type comprising a group III element and group V element and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-group III element compounds and Pd-group V element compounds.
Claim 3
Dependent Claim
14 words
The device according to claim 1 wherein the semiconductor material comprises Ga and As.
Claim 4
Dependent Claim
21 words
The device according to claim 2 wherein the contact comprises a combination of Pd-Ge compounds, Pd-Ga compounds and PdAs 2 .
Claim 5
Dependent Claim
40 words
A semiconductor device comprising a body of III-V semiconductor material of n conductivity type and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-Ga compounds and PdAs 2 .
Claim 6
Dependent Claim
40 words
A semiconductor device comprising a body of III-V semiconductor material of n conductivity type and an ohmic contact formed on one surface of said body wherein said contact comprises a combination of Pd-Ge compounds, Pd-Ga compounds and PdAs 2 .
Claim 7
Dependent Claim
14 words
The device according to claim 4 wherein the semiconductor material comprises Ga and As.
Claim 8
Dependent Claim
14 words
The device according to claim 4 wherein the semiconductor material consists essentially of GaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-07 | 1980-09-06 | 1981-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-07 | 1984-09-06 | 1985-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-07 | 1988-09-06 | 1989-03-08 | $7700.00 | Window Closed / Lapsed |