US4035205A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Amphoteric heterojunction
Assignee: US Philips Corp
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Filing: 1975-12-11
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Granted: 1977-07-12
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Expires: 1995-12-11
Abstract
Abstract A method of manufacturing a hetero junction by epitaxial deposition in a solution. The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the modification. Application to electroluminescent devices of III and V type.
Inventors
- 👤 Jacques Lebailly
- 👤 Daniel Diguet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/26; H10P14/263; H10P14/265; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising a p-n hetero juncton, according to which method an epitaxial layer is deposited on a substrate by cooling a liquid solution, said solution comprising an amphoteric doping impurity, the composition of the said solution during cooling is modified at a temperature T m which is lower than the transition temperature T 1 , at which transition temperature during cooling a change of conductivity type of the deposit occurs and with the modification of the composition of the solution a change of the conductivity type of the deposit occurs, the composition of the solution after modification determining a new transition temperature T 2 which is lower than T m .
Claim 2
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising a p-n hetero juncton, according to which method an epitaxial layer is deposited on a substrate by cooling a liquid solution, said solution comprising an amphoteric doping impurity, the composition of the said solution during cooling is modified at a temperature T m which is lower than the transition temperature T 1 , at which transition temperature during cooling a change of conductivity type of the deposit occurs and with the modification of the composition of the solution a change of the conductivity type of the deposit occurs, the composition of the solution after modification determining a new transition temperature T 2 which is lower than T m .
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1, wherein cooling is continued and the cooling rate is constant.
Claim 4
Dependent Claim
29 words
A method as claimed in claim 1, wherein the initial cooling temperature is higher than the transition temperature T 1 before modification of the compositon of the liquid phase.
Claim 5
Dependent Claim
31 words
A method as claimed in claim 1, wherein the final temperature of the deposit is lower than the transition temperature T 2 after modification of the composition of the liquid phase.
Claim 6
Dependent Claim
50 words
A method as claimed in claim 1, wherein said amphoteric dopant is an element of column 1V of the periodic table of elements and said solution consists of a compound having at least one element of column III and one element of column V of the periodic table of elements.
Claim 7
Dependent Claim
46 words
A method as claimed in claim 5, wherein said solution consists essentially of gallium arsenide dissolved in gallium, said solution composition being so modified by adding aluminum to said solution at such a temperature T m , where 890° C. > T m > 700° C.
Claim 8
Dependent Claim
41 words
A semiconductor device having a p-n heterojunction, wherein said heterojunction is manufactured by means of a method as claimed in claim 1, in which the two regions on either side of said hetero junction are doped with the same amphoteric impurity.
Claim 9
Dependent Claim
81 words
A device as claimed in claim 7, wherein said device comprises a matrix of electroluminescent diodes which are integrated in a single crystal and which are separated from each other by diffused zones, an epitaxial layer which forms the bottom of the isolation islands is a p type-layer which is doped with an amphoteric impurity and an epitaxial layer in which the said diodes are diffused is an n-type layer of a different composition but doped with the same amphoteric impurity.
References Cited (Backward Citations)
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Cited
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-11 | 1981-01-10 | 1981-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-11 | 1985-01-10 | 1985-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-11 | 1989-01-10 | 1989-07-12 | $7700.00 | Window Closed / Lapsed |