US3677836A
Expired / Lapsed
US
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Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices
Assignee: International Business Machines Corp
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Filing: 1969-09-23
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Granted: 1972-07-18
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Expires: 1989-09-23
Abstract
Abstract GROWTH AS WELL AS BY ADDING ALUMINUM TO THE MELT AND A PORTION OF THE DEVICE IS GROWN ISOTHERMALLY. THE ELECTROLUMINESCENT DIODES ARE FABRICATED OF GALLIUM ALUMINUM ARSENIDE IN WHICH THE BAND GAP IS CONTROLLED DURING THE GROWTH TO PROVIDE IMPROVED EFFICIENCY DEVICES. THE BODIES ARE GROWN BY LIQUID PHASE EPITAXY SO THAT THERE IS A CENTRALLY LOCATED REGION OF CONSTANT BAND GAP ADJACENT THE JUNCTION IN WHICH THE RECOMBINATION RADIATION TAKES PLACE. IN THE REGIONS EXTENDING FROM THIS RECOMBINATION RADIATION REGION IN BOTH DIRECTIONS TO THE OPPOSITE SURFACE OF THE DIODE, THE BAND GAP IS LARGER. THE VARIATION IN BAND GAP IS ACHIEVED BY CONTROLLING THE TEMPERATURE DURING THE
Inventors
- 👤 Max R Lorenz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:25
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/062; C30B19/10; C30B19/106; H; H10; H10H; H10H20/00; H10H20/80; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/067; Y10S148/072; Y10S148/107; Y10S148/135
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-18 | 1976-01-17 | 1976-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-18 | 1980-01-17 | 1980-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-18 | 1984-01-17 | 1984-07-18 | $7700.00 | Window Closed / Lapsed |