US4252576A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial wafer for use in production of light emitting diode
Assignee: Mitsubishi Chemical Corp
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Filing: 1979-07-06
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Granted: 1981-02-24
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Expires: 1999-07-06
Abstract
Abstract An epitaxial wafer of GaAs1-xPx has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs1-xPx was from 3x1016 to 2x1017/cm3. According to the present invention, the carrier concentration is reduced lower than the conventional concentration and the luminance of LED is increased approximately two or three times the conventional luminance.
Inventors
- 👤 Shinichi Hasegawa
- 👤 Hisanori Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:05
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/811; H10H20/8242; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/067; Y10S148/072; Y10S148/119
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
In an epitaxial wafer for use in the production of a light emitting diode, comprising: a single crystalline semiconductor substrate, and; an epitaxial layer of a compound semiconductor being doped with nitrogen and having a general formula of GaAs 1-x P x , wherein the mixed crystal ratio x ranges from 0.5 to 1.0, an improvement comprising providing said epitaxial layer with a concentration of carriers having one conductivity type in the range of from 3.5×10 15 to 8.8×10 15 /cm 3 .
Claim 2
Dependent Claim
83 words
In an epitaxial wafer for use in the production of a light emitting diode, comprising: a single crystalline semiconductor substrate, and; an epitaxial layer of a compound semiconductor being doped with nitrogen and having a general formula of GaAs 1-x P x , wherein the mixed crystal ratio x ranges from 0.5 to 1.0, an improvement comprising providing said epitaxial layer with a concentration of carriers having one conductivity type in the range of from 3.5×10 15 to 8.8×10 15 /cm 3 .
Claim 3
Dependent Claim
21 words
An epitaxial wafer according to claim 1, wherein said carrier concentration is from 5×10 15 to 8.6×10 15 /cm 3 .
Claim 4
Dependent Claim
20 words
An epitaxial wafer according to claim 1 or 2, wherein said single crystalline semiconductor substrate consists of a gallium phosphide.
Claim 5
Dependent Claim
20 words
An epitaxial wafer according to claim 1 or 2, wherein said single crystalline semiconductor substrate consists of a gallium arsenide.
Claim 6
Dependent Claim
18 words
An epitaxial wafer according to claim 1 or 2, wherein said single crystalline semiconductor substrate consists of silicon.
Claim 7
Dependent Claim
95 words
An epitaxial wafer according to claim 1 or 2, wherein said wafer further comprises an intermediate epitaxial layer of a compound semiconductor having a formula GaAs 1-y P y between said single crystalline semiconductor substrate having a lattice constant hereinafter designated as l 1 and said epitaxial layer of a compound semiconductor GaAs 1-x P x having a lattice constant l 2 , wherein the lattice constant of said compound semiconductor GaAs 1-y P y is gradually changed in said intermediate layer within the range of from approximately l 1 and approximately l 2 .
Claim 8
Dependent Claim
32 words
An epitaxial layer according to claim 6, wherein the concentration of carriers having said one conductivity type in said epitaxial intermediate layer is from 2×10 16 to 5×10 17 /cm 3 .
Claim 9
Dependent Claim
54 words
An epitaxial wafer according to claim 1 or 2, wherein said carriers having one conductivity type are electrons and said epitaxial layer of the compound semiconductor GaAs 1-x P x consists of an N type conductivity portion having said carrier concentration and a P type conductivity portion, these portions forming a light-emitting PN junction.
References Cited (Backward Citations)
US3617820A
Cited
US3687744A
Cited
US3745423A
Cited
US3873382A
Cited
US4001056A
Cited
US4154630A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |