Process for the preparation of semiconductor materials and devices

Claim 1

A PROCESS FOR THE PREPARATION OF ELECTROLUMINESCENT MATERIALS FOR LIGHT-EMITTING DIODES, SAID PROCESS COMPRISING: A. PROVIDING IN A REACTION CHAMBER ASUBSTRATE OF A SINGLE CRYSTAL COMPOUND FORMED FROM GA AND ONE OF THE ELEMENTS SELECTED FROM THE GROUP CONSISTING OF AS AND P; B.COMBINING IN A VAPOR PHASE REACTANT STREAM REACTANT MATERIAL INCLUDING IMPURITY ATOMS, SAID MATERIALSBEING ADAPTED FOR THE FORMTION OF GAAS1-XPX, WHEREIN X HASAN INITIAL VALUE WITHIN THE RANGE OF GREATER THAN 0.2 TO LESS THAN FINAL VALUE WITHIN THE RANGE OF GREATER THAN 0.2 TO LESS THAN 1.0; C. INTRODUCING SAID REACTANT STREAM INTO SAID REACTANT CHAMBER; D. EPITAXIALLY DEPOSITING ON SAID SUBSTRATE FROM SAID STREAM SAID REACTANT MATERIALS TO FORM AFIRST EPITAXIALLY LAYER OF A FIRST ELECTRICAL CONDUCTIVITY TYPE ON SAID SUBSTRATE, SAID LAYER CONSTITUTING A BULK REGION SUBSTANTIALLY FREE OF ISOELECTRONIC IMPURITES; E. INTRODUCING INTO SAID STREAM AN ISOELECTRONIC IMPURITY IN VAPOR FORM; F. EPITAXIALLY DEPOSITING ON SAID SUBSTRATE FROM SAID STREAM SAID REACTANT MATERIALS TO FORM A SECOND EPITAXIAL LAYER OF SAID FIRST CONDUCTIVITY TYPE ON SAID FIRST EPITAXIALLY LAYER, SAID SECOND EPITAXIAL LAYER PROVIDING A SURFACE REGION CONTAINING SAID ISOELECTRONIC IMPURITY ATOMS; AND G. FORMING A P-N JUNCTION IN SAID SURFACE REGION BY INTRODUCING ING ELECTRONIC IMPURITY ATOMS OF AN ELECTRONIC CONDUCTIVING TYPE OPPOSITE TO THAT OF SAID FIRST CONDUCTIVITY TYPE.