US3077384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing indium phosphide and gallium arsenide of high purity
Assignee: Wacker Chemie AG
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Filing: 1961-04-18
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Granted: 1963-02-12
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Expires: 1981-04-18
Abstract
No abstract record available.
Inventors
- 👤 Enk Eduard
- 👤 Nickl Julius
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:55
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C01; C01B; C01B19/00; C01B19/007; C01B25/00; C01B25/06; C01B32/00; C01B32/90; C01B33/00; C01B33/06; C01B35/00; C01B35/02; C01B35/04; C01G; C01G1/00; C01G1/12; C22; C22C; C22C1/00; C22C1/007; C30B11/06; C30B11/10; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S148/00; Y10S148/056; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
125 words
PROCESS FOR MANUFACTURING A BINARY COMPOUND SELECTED FROM THE GROUP CONSISTING OF INDIUM PHOSPHIDE AND GALLIUM ARSENIDE, OF HIGH PURITY, WHICH COMPRISES FORMING A MELT OF AN ELEMENT, SELECTED FROM THE GROUP CONSISTING OF INDIUM AND GALLIUM, IN A CONTAINER AT THE TEMPERATURE OF REACTION AT WHICH THE BINARY COMPOUND IS FORMED, VAPORIZING PHOSPHROUS WHERE THE BINARY COMPOUND BEING FORMED IS INDIUM PHOSPHIDE AND A SUBSTANCE SELECTED FROM THE GROUP CONSISTING OF ARSENIC AND ARSENIC HYDRIDE WHERE THE COMPOUND BEING FORMED IS GALLIUM ARSENIDE, AT THE TEMPERATURE OF REACTION IN SAID CONTAINER, ABOVE AND IN CONTACT WITH THE SURFACE OF THE MELT, DIPPING A SOLID BODY INTO SAID MELT AND THEN RAISING SAID SOLID BODY ABOVE THE SURFACE OF SAID MELT AND OUT OF CON-
Claim 2
Dependent Claim
125 words
PROCESS FOR MANUFACTURING A BINARY COMPOUND SELECTED FROM THE GROUP CONSISTING OF INDIUM PHOSPHIDE AND GALLIUM ARSENIDE, OF HIGH PURITY, WHICH COMPRISES FORMING A MELT OF AN ELEMENT, SELECTED FROM THE GROUP CONSISTING OF INDIUM AND GALLIUM, IN A CONTAINER AT THE TEMPERATURE OF REACTION AT WHICH THE BINARY COMPOUND IS FORMED, VAPORIZING PHOSPHROUS WHERE THE BINARY COMPOUND BEING FORMED IS INDIUM PHOSPHIDE AND A SUBSTANCE SELECTED FROM THE GROUP CONSISTING OF ARSENIC AND ARSENIC HYDRIDE WHERE THE COMPOUND BEING FORMED IS GALLIUM ARSENIDE, AT THE TEMPERATURE OF REACTION IN SAID CONTAINER, ABOVE AND IN CONTACT WITH THE SURFACE OF THE MELT, DIPPING A SOLID BODY INTO SAID MELT AND THEN RAISING SAID SOLID BODY ABOVE THE SURFACE OF SAID MELT AND OUT OF CON-
References Cited (Backward Citations)
US2871100A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-02-11 | 1966-08-13 | 1967-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-02-11 | 1970-08-13 | 1971-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-02-11 | 1974-08-13 | 1975-02-12 | $7700.00 | Window Closed / Lapsed |