Semiconductor device having contacting but electrically isolated regions of opposite conductivity types

Claim 2

A semiconductor device comprising: an insulating body formed of substantially an insulating material; a p-type semiconductor region formed on said insulating body and constituting at least part of a first semiconductor circuit section; an n-type semiconductor region formed on said insulating body and constituting at least part of a second semiconductor circuit section, at least part of said n-type semiconductor region being in contact with said p-type semiconductor region; first potential setting means connected to said p-type semiconductor region to set the p-type semiconductor region at a first predetermined operation potential; and second potential setting means connected to said n-type semiconductor region to set the n-type semiconductor region at a second preferred operation potential higher than the first predetermined operation potential, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 3

A semiconductor device according to claim 1, wherein said first and second semiconductor circuit sections each includes at least one MOS transistor.

Claim 4

A semiconductor device according to claim 1, wherein said first semiconductor circuit section includes at least one depletion type p-channel MOS transistor and said second semiconductor circuit section includes at least one depletion type n-channel MOS transistor.

Claim 5

A semiconductor device according to claim 1, wherein said first semiconductor circuit section includes at least one MOS transistor constituting a first inverter and said second semiconductor circuit section includes at least one MOS transistor constituting a second inverter, said first and second inverters being cascade-connected.

Claim 6

A semiconductor device according to claim 1, wherein said first and second semiconductor circuit sections have a plurality of MOS transistors combined to constitute a flip-flop circuit.

Claim 7

A semiconductor device according to claim 1, wherein said first semiconductor circuit section has a plurality of MOS transistors constituting a first logic gate circuit and said second semiconductor circuit section has a plurality of MOS transistors constituting a second logic gate circuit, said first and second logic gate circuits being cascade-connected.

Claim 8

A semiconductor device according to claim 6, wherein said MOS transistors are of the depletion type.

Claim 9

A semiconductor device comprising: an insulating body formed of substantially an insulating material; a p-type semiconductor region formed on said insulating body and constituting at least part of a first semiconductor circuit section; an n-type semiconductor region formed on said insulating body and constituting at least part of a second semiconductor circuit section, said n-type semiconductor region being at least partly in contact with said p-type semiconductor region; first potential setting means connected to said p-type semiconductor region to set the p-type semiconductor region at a first predetermined operation potential; and second potential setting means connected to said n-type semiconductor region to set the n-type semiconductor region at a second predetermined operation potential being lower than the first predetermined operation potential, the difference between the first and second potentials being not larger than the contact potential difference at the junction between said p-type and n-type semiconductor regions, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 10

A semiconductor device comprising: an insulating body formed of substantially an insulating material; a p-type semiconductor region formed on said insulating body and constituting at least part of a first semiconductor circuit section; an n-type semiconductor region formed on said insulating body and constituting at least part of a second semiconductor circuit section, said n-type semiconductor region being at least partly in contact with said p-type semiconductor region; first potential setting means connected to said p-type semiconductor region to set the p-type semiconductor region at a first predetermined operation potential; and second potential setting means connected to said n-type semiconductor region to set the n-type semiconductor region at a second predetermined operation potential being lower than the first predetermined operation potential, the difference between the first and second potentials being not larger than the contact potential difference at the junction between said p-type and n-type semiconductor regions, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 11

A semiconductor device according to claim 8, wherein said first and second semiconductor circuit sections each includes at least one MOS transistor.

Claim 12

A semiconductor device according to claim 8, wherein said first semiconductor circuit section has a p-channel MOS transistor having a source and a drain formed in said p-type semiconductor region, and said second semiconductor circuit section has an n-channel MOS transistor having a source and a drain formed in said n-type semiconductor region, said p- and n-type MOS transistors constituting a complementary MOS inverter.

Claim 13

A semiconductor device according to claim 10, wherein said p- and n-channel MOS transistors are of the enhancement type, and the channel regions of said p- and n-type regions are in contact with each other.

Claim 14

A semiconductor device comprising: an insulating body formed of substantially an insulating material; at least one p-type semiconductor region formed on said insulating body; at least one n-type semiconductor region formed on said insulating body and at least partly in contact with said at least one p-type semiconductor region; a first gate electrode section formed insulatively over said p-type semiconductor region to constitute a p-channel MOS transistor section; a second gate electrode section formed insulatively over said one n-type semiconductor region to constitute an n-channel MOS transistor section; a first power supply terminal connected to said one p-type semiconductor region and set at a first predetermined operation potential; and a second power supply terminal connected to said one n-type semiconductor region, and set at a second predetermined operation potential which is higher than the first predetermined operation potential, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 15

A semiconductor device comprising: an insulating body formed of substantially an insulating material; at least one p-type semiconductor region formed on said insulating body; at least one n-type semiconductor region formed on said insulating body and at least partly in contact with said at least one p-type semiconductor region; a first gate electrode section formed insulatively over said p-type semiconductor region to constitute a p-channel MOS transistor section; a second gate electrode section formed insulatively over said one n-type semiconductor region to constitute an n-channel MOS transistor section; a first power supply terminal connected to said one p-type semiconductor region and set at a first predetermined operation potential; and a second power supply terminal connected to said one n-type semiconductor region, and set at a second predetermined operation potential which is higher than the first predetermined operation potential, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 16

A semiconductor device according to claim 12, wherein said first gate electrode section has two gate electrodes constituting two MOS transistors with the current paths connected in series.

Claim 17

A semiconductor device according to claim 12 or 13, wherein said second gate electrode section has two gate electrodes constituting two MOS transistors with the current paths connected in series.

Claim 18

A semiconductor device comprising: an insulating body formed of substantially an insulating material; at least one p-type semiconductor region formed on said insulating body at least one n-type semiconductor region formed on said insulating body and at least partly in contact with said at least one p-type semiconductor region; a first gate electrode section formed insulatively over said one p-type semiconductor region to constitute a p-channel MOS transistor section; a second gate electrode section formed insulatively over said one n-type semiconductor region to constitute an n-channel MOS transistor section; a first power supply terminal which is connected to said one p-type semiconductor region and which is set at a first predetermined operation potential; and a second power supply terminal which is connected to said one n-type semiconductor region and which is set at a second predetermined operation potential lower than the first predetermined operation potential, the difference between the first and second predetermined operation potentials being not larger than the contact potential difference at the junction between said p- and n-type semiconductor regions, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 19

A semiconductor device comprising: an insulating body formed of substantially an insulating material; at least one p-type semiconductor region formed on said insulating body at least one n-type semiconductor region formed on said insulating body and at least partly in contact with said at least one p-type semiconductor region; a first gate electrode section formed insulatively over said one p-type semiconductor region to constitute a p-channel MOS transistor section; a second gate electrode section formed insulatively over said one n-type semiconductor region to constitute an n-channel MOS transistor section; a first power supply terminal which is connected to said one p-type semiconductor region and which is set at a first predetermined operation potential; and a second power supply terminal which is connected to said one n-type semiconductor region and which is set at a second predetermined operation potential lower than the first predetermined operation potential, the difference between the first and second predetermined operation potentials being not larger than the contact potential difference at the junction between said p- and n-type semiconductor regions, thereby electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 20

A semiconductor device according to claim 15, wherein said first gate electrode section has two gate electrodes constituting two MOS transistors with the current paths connected in series.

Claim 21

A semiconductor device according to claim 15 or 16, wherein said second gate electrode section has two gate electrodes constituting two MOS transistors with the current paths connected in series.

Claim 22

A semiconductor device according to claim 1 comprising: first and second power supply terminals which are respectively set at first and second potentials of different levels; a first semiconductor circuit section connected to said first power supply terminal for generating an output signal having a potential level between said first potential and a third potential according to an input signal having a potential level between said second and third potentials, said third potential being at a level between the levels of said first and second potentials; and a second semiconductor circuit section connected to said second power supply terminal for generating an output signal having a potential level between said second and third potentials according to the output signal from said first semiconductor circuit section.

Claim 23

A semiconductor circuit according to claim 18, wherein said first semiconductor circuit section includes a first load having one end connected to said first power supply terminal and a first MOS transistor having a drain connected to the other end of said first load, a gate to which the input signal is supplied and a source to which said third potential is applied, and also wherein said second semiconductor circuit section includes a second load having one end connected to said second power supply terminal and a second MOS transistor having a drain connected to the other end of said second load and a gate and a source respectively connected to the drain and source of said first MOS transistor, said second MOS transistor having a different channel from the channel of said first MOS transistor.

Claim 24

A semiconductor circuit according to claim 19, wherein said first and second MOS transistors are of the depletion type.

Claim 25

A semiconductor circuit according to claim 19, wherein said first load is a MOS transistor having a threshold voltage of the absolute value smaller than the absolute value of the threshold voltage of said first MOS transistor, and said second load is a MOS transistor having a threshold voltage of the absolute value smaller than the absolute value of the threshold voltage of said second MOS transistor.

Claim 26

A semiconductor circuit according to claim 19, wherein said first and second loads are resistors.

Claim 27

A semiconductor circuit according to claim 19, wherein said first and second power supply terminals are respectively positive and negative power supply terminals.

Claim 28

A semiconductor circuit according to claim 19, wherein the drain of said first MOS transistor is directly connected to the gate of said second MOS transistor.

Claim 29

A semiconductor circuit according to claim 19, which further comprises an MOS transistor having the current path thereof connected between the drain of said first MOS transistor and the gate of said second MOS transistor.

Claim 30

A semiconductor circuit according to claim 19, wherein the drain of said second MOS transistor is connected to the gate of said first MOS transistor.

Claim 31

A semiconductor circuit according to claim 19, wherein said first and second MOS transistors and said first and second loads are formed as a silicon-on-sapphire structure.

Claim 32

A semiconductor circuit according to claim 18, wherein said first semiconductor circuit section includes a first load having one end connected to said first power supply terminal and at least one first logic gate circuit constituted by a first MOS transistor circuit having a plurality of MOS transistors with the current paths connected in series with one another and with said first load, and said second semiconductor circut section includes a second load having one end connected to said second power supply terminal and a second logic gate circuit constituted by a second MOS transistor circuit having a plurality of MOS transistors with the current paths connected in series with one another and with said second load, the output signal from said first logic gate circuit being received at one of the gates of the MOS transistors of said second logic circuit.

Claim 33

A semiconductor device comprising: an insulation body formed of substantially insulative material; a first semiconductor region of one conductivity type formed on said insulation body to comprise at least part of a first semiconductor circuit section; a second semiconductor region having a conductivity type opposite to that of said first semiconductor region and formed at least partly in contact with said first semiconductor region on said insulation body to comprise at least part of second semiconductor circuit section; and first and second power source terminals respectively connected to said first and second semiconductor regions, a voltage being applied between said first and second power source terminals to apply a reverse bias voltage between said first and second semiconductor regions.

Claim 34

A semiconductor device comprising: an insulation body formed of substantially insulative material; a first semiconductor region of one conductivity type formed on said insulation body to comprise at least part of a first semiconductor circuit section; a second semiconductor region having a conductivity type opposite to that of said first semiconductor region and formed at least partly in contact with said first semiconductor region on said insulation body to comprise at least part of second semiconductor circuit section; and first and second power source terminals respectively connected to said first and second semiconductor regions, a voltage being applied between said first and second power source terminals to apply a reverse bias voltage between said first and second semiconductor regions.

Claim 35

A semiconductor device comprising: an insulating body formed of substantially an insulating material; a p-type semiconductor region formed on said insulating body and constituting at least part of a first semiconductor circuit section; an n-type semiconductor region formed on said insulating body and constituting at least part of a second semiconductor circuit section, with at least part of said n-type semiconductor region being in contact with said p-type semiconductor region; first potential setting means connected to said p-type semiconductor region for setting one end of said p-type semiconductor region at a first predetermined operation potential; reference potential setting means connected to said p-type and n-type semiconductor regions for setting the other end of said p-type semiconductor region and one end of said n-type semiconductor region at a reference potential higher than the first predetermined operation potential; and second potential setting means continuously connected to said n-type semiconductor region for setting the other end of said n-type semiconductor region at a second predetermined operation potential higher than the reference potential, and for electrically isolating said p-type and said n-type semiconductor regions from each other.

Claim 36

A semiconductor device comprising: an insulating body formed of substantially an insulating material; a p-type semiconductor region formed on said insulating body and constituting at least part of a first semiconductor circuit section; an n-type semiconductor region formed on said insulating body and constituting at least part of a second semiconductor circuit section, with at least part of said n-type semiconductor region being in contact with said p-type semiconductor region; first potential setting means connected to said p-type semiconductor region for setting one end of said p-type semiconductor region at a first predetermined operation potential; reference potential setting means connected to said p-type and n-type semiconductor regions for setting the other end of said p-type semiconductor region and one end of said n-type semiconductor region at a reference potential higher than the first predetermined operation potential; and second potential setting means continuously connected to said n-type semiconductor region for setting the other end of said n-type semiconductor region at a second predetermined operation potential higher than the reference potential, and for electrically isolating said p-type and said n-type semiconductor regions from each other.