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US3840888A Expired / Lapsed US ⏱️ 0.0 years remaining

Complementary mosfet device structure

Assignee: International Business Machines Corp
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Filing: 1969-12-30
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Granted: 1974-10-08
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Expires: 1989-12-30
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Abstract

Abstract A complementary field effect device which incorporates pairs of source and drain regions and a common channel region is disclosed. One of the field effect transistors which shares the common channel region is an n-channel device while the other is a p-channel device. When these devices are operated, one device is in the ON condition while the other device is in the substantially OFF condition. The structure may be fabricated by known integrated circuit techniques and, as a result of its unique configuration, is useful in logical operations which require complementary devices.

Inventors

  • 👤 F Gaensslen
  • 👤 L Terman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 05:57
CPC Classifications
H; H10; H10D; H10D86/00; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/053; Y10S148/122; Y10S148/15

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 68 words
A complementary metal-oxide-semiconductor field effect device comprising: at least two transistors each having a source and drain, a common channel region, and a common gate electrode disposed over said common channel region; electrodes disposed in contacting relationship with said source and drain regions; means connected to said electrodes and to said common gate for simultaneously rendering one of said at least two transistors conductive and the other nonconductive.
Claim 2
Dependent Claim 68 words
A complementary metal-oxide-semiconductor field effect device comprising: at least two transistors each having a source and drain, a common channel region, and a common gate electrode disposed over said common channel region; electrodes disposed in contacting relationship with said source and drain regions; means connected to said electrodes and to said common gate for simultaneously rendering one of said at least two transistors conductive and the other nonconductive.
Claim 3
Dependent Claim 16 words
A complementary field effect device according to claim 1 wherein said transistors are enhancement mode devices.
Claim 4
Dependent Claim 36 words
A complementary field effect device according to claim 1 wherein one of said at least two transistors is an enhancement mode device and the other of said at least two transistors is a depletion mode device.
Claim 5
Dependent Claim 19 words
A complementary field effect device according to claim 1 wherein said common channel region is a high resistivity semiconductor.
Claim 6
Dependent Claim 22 words
A complementary field effect device according to claim 1 wherein said common channel region is a lightly doped region of semiconductor material.
Claim 7
Dependent Claim 22 words
A complementary field effect device according to claim 1 wherein at least one of said two transistors is an enhancement mode device.
Claim 8
Dependent Claim 22 words
A complementary field effect device according to claim 1 wherein at least one of said two transistors is a depletion mode device.
Claim 9
Dependent Claim 59 words
A complementary field effect device according to claim 1 wherein said source and drain regions of one of said at least two transistors are diffused regions of a given conductivity type and the source and drain regions of the other of said at least two transistors are diffused regions of a conductivity type opposite to said given conductivity type.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-10-07 1978-04-08 1978-10-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-10-07 1982-04-08 1982-10-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-10-07 1986-04-08 1986-10-08 $7700.00 Window Closed / Lapsed

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