JPS5378784A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-12-23
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Granted: —
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Expires: 1996-12-23
Abstract
Abstract PURPOSE:To fabricate the highly-integrated C-type MOS element by combining and constituting n-channel MOS and p-channel J-type FET on a semiconductor or insulating plate.
Inventors
- 👤 Yoshiiku Togei
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 09:47
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82
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