Patent US4485393A successfully refreshed from Google Patents.
US4485393A
Expired / Lapsed
US
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Semiconductor device with selective nitride layer over channel stop
Assignee: Toshiba Corp
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Filing: 1981-05-26
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Granted: 1984-11-27
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Expires: 2001-05-26
Abstract
Abstract A semiconductor device comprises a semiconductor body of one conductivity type, at least one semiconductor region of the opposite conductivity type formed in the semiconductor body and having a surface flush with the surface of the semiconductor body, an insulative or semi-insulative film formed on the semiconductor body or semiconductor region through a passivation layer and having a fixed charge, positive or negative, and an electrode metal layer connected to at least one of the semiconductor body and region and formed locally on the film directly or through a passivation layer. The semiconductor body or region is of N conductivity type when the film has a positive fixed charge and of P conductivity type when the film has a negative fixed charge.
Inventors
- 👤 Kuniaki Kumamaru
- 👤 Shunichi Hiraki
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:36
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
217 words
A lateral semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) an emitter region of P conductivity type formed in the surface of said semiconductor body; (c) a collector region of P conductivity type formed in the surface of said semiconductor body, separated from and surrounding said emitter region; (d) a channel-cut region formed in the surface of said semiconductor body, separated from and surrounding said collector region; a portion of said channel-cut region forming a base contact region; (e) an insulating layer of silicon dioxide formed on said semiconductor body to cover said channel-cut region, and to cover the area of said semiconductor body which said channel-cut regions surrounds; (f) a layer of silicon nitride film formed on said insulating layer over said channel-cut region except for said base contact region, over the area between said channel-cut region and said collector region, and over the area between said collector region and said emitter region, but not over said collector, emitter, or base contact regions; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said base contact, emitter, and collector regions; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 2
Dependent Claim
217 words
A lateral semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) an emitter region of P conductivity type formed in the surface of said semiconductor body; (c) a collector region of P conductivity type formed in the surface of said semiconductor body, separated from and surrounding said emitter region; (d) a channel-cut region formed in the surface of said semiconductor body, separated from and surrounding said collector region; a portion of said channel-cut region forming a base contact region; (e) an insulating layer of silicon dioxide formed on said semiconductor body to cover said channel-cut region, and to cover the area of said semiconductor body which said channel-cut regions surrounds; (f) a layer of silicon nitride film formed on said insulating layer over said channel-cut region except for said base contact region, over the area between said channel-cut region and said collector region, and over the area between said collector region and said emitter region, but not over said collector, emitter, or base contact regions; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said base contact, emitter, and collector regions; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 3
Dependent Claim
199 words
A vertical bipolar semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) a base region of P conductivity type formed in the surface of said semiconductor body; (c) an emitter region of N conductivity type formed in the surface of said emitter region; (d) a channel-cut region formed in the surface of said semiconductor body, separated from and surrounding said base region; a portion of said channel-cut region forming a collector contact region; (e) an insulating layer of silicon dioxide formed on said semiconductor body to cover said channel-cut region, and to cover the area of said semiconductor body which said channel-cut region surrounds; (f) a layer of silicon nitride film formed on said insulating layer over said channel-cut region, except for said collector contact region, and over the area between said channel-cut region and said base region, but not over said base and collector contact regions; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said base, emitter, and collector contact regions; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 4
Dependent Claim
199 words
A vertical bipolar semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) a base region of P conductivity type formed in the surface of said semiconductor body; (c) an emitter region of N conductivity type formed in the surface of said emitter region; (d) a channel-cut region formed in the surface of said semiconductor body, separated from and surrounding said base region; a portion of said channel-cut region forming a collector contact region; (e) an insulating layer of silicon dioxide formed on said semiconductor body to cover said channel-cut region, and to cover the area of said semiconductor body which said channel-cut region surrounds; (f) a layer of silicon nitride film formed on said insulating layer over said channel-cut region, except for said collector contact region, and over the area between said channel-cut region and said base region, but not over said base and collector contact regions; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said base, emitter, and collector contact regions; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 5
Dependent Claim
154 words
A resistor semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) a resistor region of P conductivity type formed in the surface of said semiconductor body; (c) a channel-cut region formed in the surface of said semiconductor body separated from and surrounding said resistor region; (d) an isolation region formed in the surface of said semiconductor body separated from and surrounding said channel-cut region; (e) an insulating layer of silicon dioxide formed on said semiconductor body within said isolation region; (f) a layer of silicon nitride film formed on said insulating layer between said isolation region and said resistor region, but not over said resistor region; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said resistor region; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 6
Dependent Claim
154 words
A resistor semiconductor device comprising: (a) a semiconductor body of N conductivity type; (b) a resistor region of P conductivity type formed in the surface of said semiconductor body; (c) a channel-cut region formed in the surface of said semiconductor body separated from and surrounding said resistor region; (d) an isolation region formed in the surface of said semiconductor body separated from and surrounding said channel-cut region; (e) an insulating layer of silicon dioxide formed on said semiconductor body within said isolation region; (f) a layer of silicon nitride film formed on said insulating layer between said isolation region and said resistor region, but not over said resistor region; and (g) electrode means positioned on said layers and selectively passing through said layers for electrically contacting said resistor region; and said silicon nitride film beneath said electrode means being of sufficient thickness to prevent positive charge build-up in the surface of said semiconductor body.
Claim 7
Independent Claim
17 words
A device of claims 1, 2, or 3 wherein said silicon nitride film is 0.08 microns thick.
Claim 8
Independent Claim
19 words
A device of claims 1, 2, or 3 wherein said insulating layer of silicon dioxide is 1.5 microns thick.
Claim 9
Independent Claim
28 words
A device of claims 1, 2 or 3 wherein said insulating layer of silicon dioxide is 1.5 microns thick and said silicon nitride film is 0.08 microns thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-27 | 1988-05-28 | 1988-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-27 | 1992-05-28 | 1992-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-27 | 1996-05-28 | 1996-11-27 | $7700.00 | Window Closed / Lapsed |