US3922709A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconducting element having improved voltage endurance properties
Assignee: ABB Norden Holding AB
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Filing: 1973-11-16
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Granted: 1975-11-25
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Expires: 1993-11-16
Abstract
Abstract A semiconductor of the kind comprising at least one pn-junction the doping of which in the p-region (n-region) increases continuously or gradually from the pn-junction, and also having an isolating surface layer at least at the marginal portion of said pn-junction. In this semiconductor a first portion of said surface layer is positioned outside the substantially p-doped (ndoped) region, and a second portion of said surface layer is positioned outside the n-doped (p-doped) region of said pnjunction, said first portion having a permanently negative (positive) surface charge relative to said second portion.
Inventors
- 👤 John Torkel Wallmark
- 👤 Mieczyslaw Bakowski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:06
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10D; H10D18/00; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D64/00; H10D64/118; H10D8/00; H10D8/422; H10P; H10P95/00; H10W74/43
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
AN IMPROVED HIGH VOLTAGE SEMICONDUCTOR ELEMENT COMPRISING, A BODY OF SEMICONDUCTOR MATERIAL HAVING A P-DOPED REGION AND AN N-DOPED REGION AND A PN-JUNCTION THEREBETWEEN, SAID PN-JUNCTION INTERSECTING THE SURFACE OF SAID BODY, AND AN ISOLATING SURFACE LAYER AT LEAST AT SAID INTERSECTION AND ON BOTH SIDES THEREOF, SAID SURFACE LAYER HAVING A PERMANENT ELECTRICAL CHARGE, SAID P-REGION HAVING A DEGREE OF DOPING WHICH INCREASES WITH THE DISTANCE FROM SAID PN-JUNCTION, THE IMPROVEMENT WHICH COMPRISES A FIRST PORTION OF SAID SURFACE LAYER AT THE SURFACE OF SAID P-REGION ADJACENT SAID INTERSECTION, AND A SECOND PORTION OF SAID SURFACE LAYER AT THE SURFACE OF SAID NREGION ADJACENT SAID INTERSECTION AND CONTIGUOUS WITH SAID FIRST PORTION, AND SAID FIRST PORTION HAVING A PERMANENT SURFACE CHARGE WHICH IS NEGATIVE RELATIVE TO THE PERMANENT SURFACE CHARGE OF SAID SECOND PORTION.
Claim 2
Dependent Claim
135 words
AN IMPROVED HIGH VOLTAGE SEMICONDUCTOR ELEMENT COMPRISING, A BODY OF SEMICONDUCTOR MATERIAL HAVING A P-DOPED REGION AND AN N-DOPED REGION AND A PN-JUNCTION THEREBETWEEN, SAID PN-JUNCTION INTERSECTING THE SURFACE OF SAID BODY, AND AN ISOLATING SURFACE LAYER AT LEAST AT SAID INTERSECTION AND ON BOTH SIDES THEREOF, SAID SURFACE LAYER HAVING A PERMANENT ELECTRICAL CHARGE, SAID P-REGION HAVING A DEGREE OF DOPING WHICH INCREASES WITH THE DISTANCE FROM SAID PN-JUNCTION, THE IMPROVEMENT WHICH COMPRISES A FIRST PORTION OF SAID SURFACE LAYER AT THE SURFACE OF SAID P-REGION ADJACENT SAID INTERSECTION, AND A SECOND PORTION OF SAID SURFACE LAYER AT THE SURFACE OF SAID NREGION ADJACENT SAID INTERSECTION AND CONTIGUOUS WITH SAID FIRST PORTION, AND SAID FIRST PORTION HAVING A PERMANENT SURFACE CHARGE WHICH IS NEGATIVE RELATIVE TO THE PERMANENT SURFACE CHARGE OF SAID SECOND PORTION.
Claim 3
Dependent Claim
29 words
An improved semiconductor element as claimed in claim 1, in which said first surface layer portion has a negative surface charge, and said second portion has a positive charge.
Claim 4
Dependent Claim
26 words
An improved semiconductor element as claimed in claim 1, in which said first and said second portions of said surface layer have a negative surface charge.
Claim 5
Dependent Claim
26 words
An improved semiconductor element as claimed in claim 1, in which said first and said second portions of said surface layer have a positive surface charge.
Claim 6
Dependent Claim
37 words
An improved semiconductor element as claimed in claim 1, in which the junction between said first and said second portions of said surface layer with different surface charges has a gradual change in concentration of surface charges.
Claim 7
Dependent Claim
46 words
An improved semiconductor element as claimed in claim 1, in which the junction between said first and said second portions of said surface layer is essentially parallel with said intersection portion of said pn-junction and the surface, and said junction being positioned overlying said n-doped region.
Claim 8
Dependent Claim
29 words
An improved semiconductor element as claimed in claim 6, in which said surface charge is positioned essentially at the junction between said surface layer and the semiconducting material proper.
Claim 9
Dependent Claim
19 words
A semiconductor as claimed in claim 6, in which said surface charge is positioned essentially inside said surface layer.
Claim 10
Dependent Claim
24 words
A semiconductor element as claimed in claim 6, in which said surface charge is positioned essentially at the outer face of said surface layer.
Claim 11
Dependent Claim
47 words
A semiconductor element as claimed in claim 8, wherein said surface layer consists of an electrically isolating layer, comprising an oxide, and a layer of an essentially mechanically isolating material comprising silicon rubber, and said surface charges being positioned essentially at the junction between said two layers.
Claim 12
Dependent Claim
47 words
A semiconductor element as claimed in claim 8, wherein said surface layer consists of an electrically isolating layer comprising an oxide, and a layer of an essentially mechanically and electrically isolating material comprising silicon rubber, and said surface charges being positioned essentially in said mechanically isolating material.
Claim 13
Dependent Claim
45 words
A semiconductor element as claimed in claim 8, wherein said surface layer consists of an electrically isolating layer comprising an oxide, and a layer of an essentially mechanically isolating material comprising silicon rubber, and said surface charges being positioned essentially in said electrically isolating material.
Claim 14
Dependent Claim
59 words
An improved sEmiconductor element as claimed in claim 1, in which said semiconductor body has the form of a flat disc with a bevelled edge surface and comprising a plurality of pn-junctions, one of said junctions intersecting said edge surface, and said first and second portions of said surface layer being positioned at said edge surface adjacent said pn-junction.
References Cited (Backward Citations)
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US3413527A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-24 | 1979-05-26 | 1979-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-24 | 1983-05-26 | 1983-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-24 | 1987-05-26 | 1987-11-25 | $7700.00 | Window Closed / Lapsed |