US4172158A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a phosphorus-nitrogen-oxygen film on a substrate
Assignee: International Business Machines Corp
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Filing: 1977-02-28
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Granted: 1979-10-23
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Expires: 1997-02-28
Abstract
Abstract A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.
Inventors
- 👤 Pei-Ching Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
55 words
A method for forming phosphorus-nitrogen-oxygen film comprising: providing a reaction chamber having a substrate temperature of about 400° to 900° C. with a suitable substrate; and passing the reaction gases PH 3 , NH 3 and a gas which is a source of oxygen through the chamber to deposit said phosphorus-nitrogen-oxygen film onto said substrate.
Claim 2
Independent Claim
55 words
A method for forming phosphorus-nitrogen-oxygen film comprising: providing a reaction chamber having a substrate temperature of about 400° to 900° C. with a suitable substrate; and passing the reaction gases PH 3 , NH 3 and a gas which is a source of oxygen through the chamber to deposit said phosphorus-nitrogen-oxygen film onto said substrate.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the said gas which is a source of oxygen is O 2 .
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein the reaction chamber has a substrate temperature of about 450° to 850° C.
Claim 5
Dependent Claim
21 words
The method of claim 2 wherein the said O 2 gas is greater than about 0.01% of the reaction gas mixture.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein gas feed rates are between about 0.5 and 2.5 cc/min. for PH 3 and between about 100 cc/min. and 300 cc/min. for NH 3 .
Claim 7
Dependent Claim
36 words
The method of claim 5 wherein the said gas which is a source of oxygen is O 2 and its content in O 2 -inert gas portion of the feed gases between about 0.01% to 98%.
Claim 8
Dependent Claim
24 words
The method of claim 1 wherein an inert carrier gas is used and its feed rate is between about 3 liters/min. and 20.5 liters/min.
Claim 9
Dependent Claim
15 words
The method of claim 7 wherein the said inert carrier gas is N 2 .
Claim 10
Dependent Claim
23 words
The method of claim 1 wherein a source of boron is included in the reaction gases to dope the said deposit with boron.
Claim 11
Dependent Claim
16 words
The method of claim 9 wherein the source of boron is B 2 H 6 gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-22 | 1983-04-23 | 1983-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-22 | 1987-04-23 | 1987-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-22 | 1991-04-23 | 1991-10-23 | $7700.00 | Window Closed / Lapsed |