US4464458A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming resist masks utilizing O-quinone diazide and pyrene
Assignee: International Business Machines Corp
•
Filing: 1982-12-30
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Granted: 1984-08-07
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Expires: 2002-12-30
Abstract
Abstract A resist system for semiconductor device fabrication comprised of bottom positive resist layer of a diazoquinone/novolak resist applied to a substrate and overcoated with a like or different diazoquinone/novolak top resist layer which has been sensitized with pyrene and/or its derivatives.
Inventors
- 👤 Ming-Fea Chow
- 👤 Edward C. Fredericks
- 👤 Wayne M. Moreau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/022; G03F7/0226
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
97 words
A process for forming a positive resist mask on a substrate comprising: A. forming on said substrate a first layer of essentially a novolak and o-quinonediazide containing positive resist which has been blanket exposed to substantially desensitize it; B. blanket coating said first layer with a non-exposed second layer of a novolak and o-quinonediazide resist containing pyrene which comprises from about 1 to about 10 wt. % of said second resist layer; C. imagewise exposing said second resist layer; and D. developing a relief image in both said resist layers by removal thereof under said image-exposed portions.
Claim 2
Dependent Claim
97 words
A process for forming a positive resist mask on a substrate comprising: A. forming on said substrate a first layer of essentially a novolak and o-quinonediazide containing positive resist which has been blanket exposed to substantially desensitize it; B. blanket coating said first layer with a non-exposed second layer of a novolak and o-quinonediazide resist containing pyrene which comprises from about 1 to about 10 wt. % of said second resist layer; C. imagewise exposing said second resist layer; and D. developing a relief image in both said resist layers by removal thereof under said image-exposed portions.
Claim 3
Dependent Claim
16 words
The process of claim 1 wherein said novolak comprises o-cresol formaldehyde, and said diazide comprises 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy)benzophenone.
Claim 4
Dependent Claim
23 words
The process of claim 1 including a bake step at about 70° to 100° C. between said image exposure and said developing steps.
Claim 5
Dependent Claim
16 words
The process of claim 3 wherein said novolak comprises o-cresol formaldehyde, and said diazide comprises 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy)benzophenone.
Claim 6
Dependent Claim
19 words
The process of claim 1, 3 or 4 wherein pyrene comprises 2 to 4 wt. % of said resist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |