Patent US4278476A successfully refreshed from Google Patents.
US4278476A
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Method of making ion implanted reverse-conducting thyristor
Assignee: Westinghouse Electric Corp
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Filing: 1979-12-05
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Granted: 1981-07-14
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Expires: 1999-12-05
Abstract
Abstract A method for making a pnpn semiconductor reverse conducting thyristor comprises the steps of forming n-type semiconductor layers on both sides of a p-type semiconductor substrate for forming an n-type emitter layer and an n-type anode-base layer. A p-type semiconductor impurity region is formed in the n-type anode-base layer for forming a p-type anode layer. A p + -type semiconductor layer is ion implanted in the p-type substrate adjacent to the n-type cathode emitter layer by irradiating it with boron atoms.
Inventors
- 👤 John Bartko
- 👤 Earl S. Schlegel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:57
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D62/17; H10D62/192; H10D62/206; H10P30/202; H10P30/204; H10P30/28; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
77 words
In a process for preparing a pnpn thyristor in a body of silicon in which the p-type anode emitter region is electrically shorted to the n-type anode base region, the step of; implanting boron atoms through the n-type cathode emitter whereby a p + type region is formed between the n-type cathode emitter region and the p-type cathode base region, said p 30 type region being doped to concentrations of from 5×10 17 to 5×10 18 .
Claim 2
Dependent Claim
77 words
In a process for preparing a pnpn thyristor in a body of silicon in which the p-type anode emitter region is electrically shorted to the n-type anode base region, the step of; implanting boron atoms through the n-type cathode emitter whereby a p + type region is formed between the n-type cathode emitter region and the p-type cathode base region, said p 30 type region being doped to concentrations of from 5×10 17 to 5×10 18 .
Claim 3
Dependent Claim
19 words
In the process of claim 1, the additional step of annealing the body of silicon following the ion implantation.
Claim 4
Dependent Claim
26 words
In the process of claim 1 wherein the ion implantation is carried out at an energy of about 36 MeV for from 20 to 200 seconds.
Claim 5
Dependent Claim
33 words
In the process of claim 3, the additional step of annealing the body of silicon for about one hour at a temperature of from 600° C. to 650° C. following the ion implantation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-13 | 1985-01-12 | 1985-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-13 | 1989-01-12 | 1989-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-13 | 1993-01-12 | 1993-07-14 | $7700.00 | Window Closed / Lapsed |