US4080620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reverse switching rectifier and method for making same
Assignee: Westinghouse Electric Corp
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Filing: 1975-11-17
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Granted: 1978-03-21
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Expires: 1995-11-17
Abstract
Abstract A reverse switching rectifier is described in which a PNPN semiconductor structure has a specially adapted N-type end zone or cathode-emitter zone. The N-type end zone penetrates to two different levels in the semiconductor body. A deep central portion and a shallow peripheral portion of the N-type end zone are produced by etching a cavity in the center of the body followed by diffusion of N-type dopant material. The exposed surfaces of the N-type end zone are then metallized to provide electrical and thermal contact thereto.
Inventors
- 👤 Chang K. Chu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:45
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/233; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/148; H10D8/00; H10D8/80
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
263 words
A two-terminal multilayer semiconductor switching device comprising a body of semiconductor material and contacting means for making thermal and electrical contact to said body; said contacting means comprising a metal cathode electrode; said body comprising an emitter zone of a first type of semiconductivity disposed along a surface portion in contact with said metal cathode electrode, a base zone of a second type of semiconductivity disposed in said body adjacent to said emitter zone and forming a PN junction with said emitter zone, said metal cathode electrode extending to contact said base zone, said emitter zone having a central portion and peripheral portion surrounding said central portion, said peripheral portion extending into said body from said metal cathode electrode to a first level of said PN junction, with the portion of said base zone forming a PN junction with said central portion of said emitter zone having a first selected doping concentration and the portion of said base zone forming a PN junction with said peripheral portion of said emitter zone having a selected second doping concentration, said second doping concentration being greater than said first selected doping concentration, said central portion extending into said body from said metal cathode electrode to a second level of said PN junction, said second level lying beyond said first level to form a semiconductor switching device which switches from a non conducting to a conducting state when a voltage having a selected change in amplitude with time is coupled to said two terminals such that the turn on characteristic of said emitter zone is substantially uniform.
Claim 2
Dependent Claim
263 words
A two-terminal multilayer semiconductor switching device comprising a body of semiconductor material and contacting means for making thermal and electrical contact to said body; said contacting means comprising a metal cathode electrode; said body comprising an emitter zone of a first type of semiconductivity disposed along a surface portion in contact with said metal cathode electrode, a base zone of a second type of semiconductivity disposed in said body adjacent to said emitter zone and forming a PN junction with said emitter zone, said metal cathode electrode extending to contact said base zone, said emitter zone having a central portion and peripheral portion surrounding said central portion, said peripheral portion extending into said body from said metal cathode electrode to a first level of said PN junction, with the portion of said base zone forming a PN junction with said central portion of said emitter zone having a first selected doping concentration and the portion of said base zone forming a PN junction with said peripheral portion of said emitter zone having a selected second doping concentration, said second doping concentration being greater than said first selected doping concentration, said central portion extending into said body from said metal cathode electrode to a second level of said PN junction, said second level lying beyond said first level to form a semiconductor switching device which switches from a non conducting to a conducting state when a voltage having a selected change in amplitude with time is coupled to said two terminals such that the turn on characteristic of said emitter zone is substantially uniform.
Claim 3
Dependent Claim
77 words
The device of claim 1 wherein said body has a cavity formed by cylindrical shaped walls extending from a major surface to a recessed surface at a predetermined depth in said body, said recessed surface being adjacent to said central portion of said emitter zone, and said metal cathode electrode makes contact with said central portion of said emitter zone at said recessed surface and with said peripheral portion of said emitter zone at said major surface.
Claim 4
Dependent Claim
57 words
The device of claim 2 wherein said metal cathode electrode makes contact with a surface portion of said base zone surrounding said emitter zone, and a multiplicity of shunts of P-type semiconductivity extend from said base zone to said metal cathode electrode through said emitter zone, said shunts being spaced at regular intervals throughout said emitter zone.
Claim 5
Dependent Claim
23 words
The device of claim 2 wherein said recessed surface preferably lies at a predetermined depth from said major surface of about 15 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-03-20 | 1981-09-19 | 1982-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-03-20 | 1985-09-19 | 1986-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-03-20 | 1989-09-19 | 1990-03-21 | $7700.00 | Window Closed / Lapsed |