Patent US4062707A successfully refreshed from Google Patents.
US4062707A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Utilizing multiple polycrystalline silicon masks for diffusion and passivation
Assignee: Sony Corp
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Filing: 1976-02-02
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Granted: 1977-12-13
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Expires: 1996-02-02
Abstract
Abstract A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.
Inventors
- 👤 Hidenobu Mochizuki
- 👤 Teruaki Aoki
- 👤 Takeshi Matsushita
- 👤 Hisao Hayashi
- 👤 Masanori Okayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:55
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10D; H10D99/00; H10P14/00; H10P14/60; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
95 words
A method for fabricating a semiconductor device comprising the steps of; forming a first polycrystalline silicon passivation layer containing between 2 and 45 atomic percent of oxygen atoms on a semiconductor layer; forming a second polycrystalline silicon passivation layer containing more than 10 atomic percent of nitrogen atoms on said first polycrystalline silicon layer; removing a part of said first and second polycrystalline silicon passivation layers selectively, for making an opening in them; and diffusing impurity material of one conductivity type into said semiconductor layer through said opening in order to form a diffused region.
Claim 2
Independent Claim
95 words
A method for fabricating a semiconductor device comprising the steps of; forming a first polycrystalline silicon passivation layer containing between 2 and 45 atomic percent of oxygen atoms on a semiconductor layer; forming a second polycrystalline silicon passivation layer containing more than 10 atomic percent of nitrogen atoms on said first polycrystalline silicon layer; removing a part of said first and second polycrystalline silicon passivation layers selectively, for making an opening in them; and diffusing impurity material of one conductivity type into said semiconductor layer through said opening in order to form a diffused region.
Claim 3
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 1 further comprising the step of diffusing impurity material of another conductivity type into said diffused region through an opening formed in an oxidized layer on said diffused region.
Claim 4
Independent Claim
172 words
A method for fabricating a semiconductor device comprising the steps of: a. forming a first polycrystalline silicon layer containing oxygen atoms between 2 and 45 atomic percent on a semiconductor layer; b. forming a second polycrystalline silicon layer containing nitrogen atoms more than 10 atomic percent on said first polycrystalline silicon layer; c. forming a third polycrystalline silicon layer containing oxygen atoms on said second polycrystalline silicon layer. d. forming a common opening in a part of said first, second and third polycrystalline silicon layer; e. diffusing impurity material of one conductivity type into said semiconductor layer through said common opening; said third polycrystalline silicon layer being changed to a silicon dioxide layer and another silicon dioxide layer being formed on the exposed surface of said semiconductor layer during said diffusion step; f. forming an opening into said another silicon dioxide layer on the semiconductor layer; and g. forming an electrode contacting said silicon layer through said opening in said another silicon dioxide layer and extending on said another silicon dioxide layer.
Claim 5
Independent Claim
172 words
A method for fabricating a semiconductor device comprising the steps of: a. forming a first polycrystalline silicon layer containing oxygen atoms between 2 and 45 atomic percent on a semiconductor layer; b. forming a second polycrystalline silicon layer containing nitrogen atoms more than 10 atomic percent on said first polycrystalline silicon layer; c. forming a third polycrystalline silicon layer containing oxygen atoms on said second polycrystalline silicon layer. d. forming a common opening in a part of said first, second and third polycrystalline silicon layer; e. diffusing impurity material of one conductivity type into said semiconductor layer through said common opening; said third polycrystalline silicon layer being changed to a silicon dioxide layer and another silicon dioxide layer being formed on the exposed surface of said semiconductor layer during said diffusion step; f. forming an opening into said another silicon dioxide layer on the semiconductor layer; and g. forming an electrode contacting said silicon layer through said opening in said another silicon dioxide layer and extending on said another silicon dioxide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-12 | 1981-06-13 | 1981-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-12 | 1985-06-13 | 1985-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-12 | 1989-06-13 | 1989-12-13 | $7700.00 | Window Closed / Lapsed |