US3372067A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a semiconductor by masking and diffusion
Assignee: Telefunken Electronic GmbH
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Filing: 1964-02-25
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Granted: 1968-03-05
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Expires: 1984-02-25
Abstract
No abstract record available.
Inventors
- 👤 Schafer Horst
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C26/00; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6324; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69395; H10P76/00; H10P76/40; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/059; Y10S148/072; Y10S148/106; Y10S148/117; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
126 words
A METHOD OF MAKING A TRANSISTOR, COMPRISING THE STEPS OF: APPLYING ONTO A SEMICONDUCTOR BODY MADE OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND THE GROUP 3- GROUP 5 COMPOUNDS A LAYER OF SILICON IN ELEMENTAL FORM; OXIDIZING THE SILICON LAYER THROUGHOUT A PORTION OF ITS THICKNESS; ETCHING A BASE-DIFFUSION WINDOW THROUGH THE SILICON OXIDE LAYER; DIFFUSING IMPURITIES THROUGH SAID WINDOW AND THROUGH THE REMAINING SILICON LAYER INTO THE SEMICONDUCTOR BODY FOR FORMING THE BASE ZONE; THEREAFTER AGAIN OXIDIZING THE REMAINING SILICON LAYER THROUGHOUT AT LEAST A PORTION OF ITS THICKNESS; ETCHING AN EMITTER-DIFFUSION WINDOW THROUGH THE LASTCREATED SILICON OXIDE LAYER; AND DIFFUSING IMPURITIES THROUGH SAID LAST-MENTIONED WINDOW AND THROUGH ANY REMAINING SILICON LAYER INTO THE SEMICONDUCTOR BODY FOR FORMING THE EMITTER ZONE.
Claim 2
Independent Claim
126 words
A METHOD OF MAKING A TRANSISTOR, COMPRISING THE STEPS OF: APPLYING ONTO A SEMICONDUCTOR BODY MADE OF A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND THE GROUP 3- GROUP 5 COMPOUNDS A LAYER OF SILICON IN ELEMENTAL FORM; OXIDIZING THE SILICON LAYER THROUGHOUT A PORTION OF ITS THICKNESS; ETCHING A BASE-DIFFUSION WINDOW THROUGH THE SILICON OXIDE LAYER; DIFFUSING IMPURITIES THROUGH SAID WINDOW AND THROUGH THE REMAINING SILICON LAYER INTO THE SEMICONDUCTOR BODY FOR FORMING THE BASE ZONE; THEREAFTER AGAIN OXIDIZING THE REMAINING SILICON LAYER THROUGHOUT AT LEAST A PORTION OF ITS THICKNESS; ETCHING AN EMITTER-DIFFUSION WINDOW THROUGH THE LASTCREATED SILICON OXIDE LAYER; AND DIFFUSING IMPURITIES THROUGH SAID LAST-MENTIONED WINDOW AND THROUGH ANY REMAINING SILICON LAYER INTO THE SEMICONDUCTOR BODY FOR FORMING THE EMITTER ZONE.
References Cited (Backward Citations)
US2739276A
Cited
US2827401A
Cited
US2981646A
Cited
US3055776A
Cited
US3221199A
Cited
US3139361A
Cited
US3200019A
Cited
US3158505A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-03-05 | 1971-09-04 | 1972-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-03-05 | 1975-09-04 | 1976-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-03-05 | 1979-09-04 | 1980-03-05 | $7700.00 | Window Closed / Lapsed |