US3709726A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices
Assignee: Ferranti International PLC
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Filing: 1970-01-06
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Granted: 1973-01-09
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Expires: 1990-01-06
Abstract
Abstract A PYROLYSIS METHOD OF PRODUCING AN ELECTRICALLY-INSULATING LAYER OF SILICON OXYNITRIDE ON A SEMICONDUCTOR DEVICE INCLUDES THE STEP OF HEATING THE DEVICE IN AN ATMOSPHERE CONTAINING AMMONIA, SILANE AND OXYGEN AT A TEMPERATURE BETWEEN 300*C. AND 600*C.
Inventors
- 👤 R Nuttall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/114; Y10S148/118
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-09 | 1976-07-10 | 1977-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-09 | 1980-07-10 | 1981-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-09 | 1984-07-10 | 1985-01-09 | $7700.00 | Window Closed / Lapsed |