Method of etching sapphire utilizing sulfur hexafluoride

Claim 2

A process for forming blind holes in a sapphire or physico-chemically equivalent substrate comprising: a. depositing a layer of silicon dioxide having a first thickness adjacent a surface of the sapphire substrate; b. depositing a layer of silicon nitride, having a second thickness, adjacent the silicon dioxide; c. defining a preselected pattern having an aperture in a mask comprised of the silicon nitride and the silicon dioxide; and d. exposing the mask and portions of the sapphire substrate unprotected by the mask to a gas mixture comprised of sulfur hexafluoride gas and a carrier gas at a temperature less than 1,050° C for a time period sufficient to form said blind holes.

Claim 3

The process of claim 1, wherein the carrier gas is hydrogen.

Claim 4

The process of claim 2, wherein sulfur hexafluoride comprises from 1/2 to 4% of the volume of the gas mixture.

Claim 5

The process of claim 3, wherein the first thickness is approximately 80 to 1000 Angstroms and the second thickness is approximately 100 to 3000 Angstroms.

Claim 6

The process of claim 4, wherein the gas mixture has a flow rate over the substrate of 10 to 50 liters per minute.

Claim 7

The process of claim 5, wherein the substrate is exposed to the gas mixture for a time period between 3 and 10 minutes.

Claim 8

The process of claim 6, wherein the substrate with the mask thereon is heated to less than 1,050° C with a radio frequency coil located around a reactor housing the substrate.

Claim 9

A process for epitaxially depositing single crystal silicon on sapphire comprising the steps recited in claim 1 and the further step of depositing epitaxially formed single crystal silicon in said blind hole.

Claim 10

A process for forming blind holes in a sapphire substrate comprising: a. depositing a first layer of silicon dioxide having a first thickness adjacent a surface of the sapphire substrate; b. depositing a layer of silicon nitride having a second thickness, adjacent the first layer of silicon dioxide; c. depositing a second layer of silicon dioxide, having a third thickness, adjacent the layer of silicon nitride; d. defining a preselected pattern having at least one aperture in a mask comprised of the first layer of silicon dioxide, the layer of silicon nitride, and the second layer of silicon dioxide; and e. exposing the mask and portions of the sapphire substrate unprotected by the mask to a vapor comprised of sulfur hexafluoride and a carrier gas at a temperature no greater than 1,050° C for a time period sufficient to form said blind holes.

Claim 11

A process for forming blind holes in a sapphire substrate comprising: a. depositing a first layer of silicon dioxide having a first thickness adjacent a surface of the sapphire substrate; b. depositing a layer of silicon nitride having a second thickness, adjacent the first layer of silicon dioxide; c. depositing a second layer of silicon dioxide, having a third thickness, adjacent the layer of silicon nitride; d. defining a preselected pattern having at least one aperture in a mask comprised of the first layer of silicon dioxide, the layer of silicon nitride, and the second layer of silicon dioxide; and e. exposing the mask and portions of the sapphire substrate unprotected by the mask to a vapor comprised of sulfur hexafluoride and a carrier gas at a temperature no greater than 1,050° C for a time period sufficient to form said blind holes.

Claim 12

The process of claim 9, wherein the carrier gas is hydrogen.

Claim 13

The process of claim 10, wherein sulfur hexafluoride comprises from 2 to 4% of the volume of the gas mixture.

Claim 14

The process of claim 11, wherein the first thickness is 80 to 1000 Angstroms and the second thickness is 500 to 3000 Angstroms.

Claim 15

A process for epitaxially depositing single crystal silicon on sapphire comprising the steps recited in claim 10 and the further step of depositing epitaxially formed single crystal silicon in said blind hole.