US3574014A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Masking technique for selective etching
Assignee: Individual
•
Filing: 1967-07-24
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Granted: 1971-04-06
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Expires: 1987-07-24
Abstract
Abstract ING THE DIELECTRIC LAYER BY AN ETCH THAT IS EFFECTIVE UPON THAT LAYER BUT NOT EFFECTIVE UPON THE LAYER OF METAL. A PROCESS FOR FORMING A PATTERN IN A DIELECTRIC LAYER BY DEPOSITING THE LAYER UPON A SEMICONDUCTOR AT ELEVATED TEMPERATURE FROM A GAS, DEPOSITING A LAYER OF METAL OVER THAT BY CHANGING THE GAS WHILE KEEPING THE WORK IN THE SAME CHAMBER, REMOVING THE LAYER OF METAL BY A BEAM OF ENERGY (SUCH AS AN ELECTRON OR A LASER BEAM) WHERE THE DIELECTRIC LAYER IS TO BE FORMED INTO A PATTERN AND ETCH
Inventors
- 👤 Frances Hugle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:55
CPC Classifications
H; H10; H10P; H10P95/00; H10P50/00; H10P50/69; H10P50/691; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/051; Y10S148/053; Y10S148/071; Y10S148/106; Y10S148/122; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-05 | 1974-10-05 | 1975-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-05 | 1978-10-05 | 1979-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-05 | 1982-10-05 | 1983-04-06 | $7700.00 | Window Closed / Lapsed |