US3717514A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single crystal silicon contact for integrated circuits and method for making same
Assignee: Motorola Solutions Inc
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Filing: 1970-10-06
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Granted: 1973-02-20
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Expires: 1990-10-06
Abstract
Abstract The method for making a single crystal silicon contact for integrated circuits is described. The epitaxial contact is selfpatterning and is formed by coherent growth on a surface of monocrystalline silicon for protecting and contacting said surface.
Inventors
- 👤 R Burgess
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:26
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P; H10P95/00; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/113; Y10S148/114; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
291 words
In the fabrication of semiconductor devices, a process for the making of diffusions in a semiconductor body employing a self aligning member for defining the region to be diffused, comprising the steps of: providing a body of silicon semiconductor material having a first surface and being of one conductivity type material; forming a first mask on said first surface and providing a first aperture therethrough for exposing a portion of said first surface; forming a first region of opposite conductivity type within said body by passing a conductivity type determining impurity through said aperture, and said first region having a second surface coplanar with said first surface; forming a diffusion mask on said first surface and said second surface and providing a second aperture therethrough for exposing a selected portion of said second surface, and said second diffusion mask having an upper surface; forming a single crystal silicon plug adherent to said second surface exposed by said second aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface; removing a portion of said second mask for preparing said remaining structure for further processing such that said top surface of saId single crystal plug is now positioned above the upper surface of the second diffusion mask; passing an impurity through said plug and into said first region to form a second region within said first region, said second region being opposite in conductivity to said first region, selectively removing a portion of said second mask, remaining after said last step, which portion is overlying said first region for exposing a second portion of said second surface; and forming separate metal electrodes adherent to said plug and said second portion of said second surface.
Claim 2
Dependent Claim
291 words
In the fabrication of semiconductor devices, a process for the making of diffusions in a semiconductor body employing a self aligning member for defining the region to be diffused, comprising the steps of: providing a body of silicon semiconductor material having a first surface and being of one conductivity type material; forming a first mask on said first surface and providing a first aperture therethrough for exposing a portion of said first surface; forming a first region of opposite conductivity type within said body by passing a conductivity type determining impurity through said aperture, and said first region having a second surface coplanar with said first surface; forming a diffusion mask on said first surface and said second surface and providing a second aperture therethrough for exposing a selected portion of said second surface, and said second diffusion mask having an upper surface; forming a single crystal silicon plug adherent to said second surface exposed by said second aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface; removing a portion of said second mask for preparing said remaining structure for further processing such that said top surface of saId single crystal plug is now positioned above the upper surface of the second diffusion mask; passing an impurity through said plug and into said first region to form a second region within said first region, said second region being opposite in conductivity to said first region, selectively removing a portion of said second mask, remaining after said last step, which portion is overlying said first region for exposing a second portion of said second surface; and forming separate metal electrodes adherent to said plug and said second portion of said second surface.
Claim 3
Dependent Claim
47 words
The process defined in claim 1 which further includes: forming a plurality of apertures in said first mask, and passing an impurity of said opposite conductivity type through said plurality of apertures for alternately forming isolation region and region of said opposite con-ductivity type on said body.
Claim 4
Dependent Claim
59 words
The process defined in claim 1 wherein the formation of said second mask comprises the steps of: forming a first layer of silicon oxide on said semiconductor body; forming a silicon nitride layer on said first layer; and forming a second layer of silicon oxide on said nitride layer to a thickness for determining the size of said plug.
Claim 5
Dependent Claim
37 words
The process defined in claim 1 wherein the removal of a portion of said mask comprises the step of: removing said second layer for cleaning said plug and for preparing it for contact with said metal electrode.
Claim 6
Dependent Claim
39 words
A process defined in claim 1 wherein said first layer of silicon oxide is approximately 2500 angstroms thick: said silicon nitride layer is approximately 1000 angstroms thick; and said second layer of silicon oxide is approximately 10,000 angstroms thick.
Claim 7
Dependent Claim
202 words
In the fabrication of semiconductor devices, a process for the making of diffusions, in a semiconductor body, employing a self aligning member as the means for defining the region to be diffused, comprising the steps of: providing a body of semiconductor material having a first surface and being of one conductivity type material; forming a diffusion mask on said first surface and providing an aperture therethrough for exposing a portion of said first surface, and said diffusion mask having an upper surface; forming a single crystal silicon plug adherent to said first surface exposed by said aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface of said diffusion mask; diffusing opposite type conductivity determining impurities through said plug for forming a region of opposite type conductivity having a junction with said body and extending to said first surface under said diffusion mask; removing a portion of said mask for preparing said plug for further processing such that said top surface of said single crystal plug is now positioned above the upper surface of the diffusion mask; and forming a metal electrode adherent to said plug for making electrical contact to said region.
Claim 8
Dependent Claim
202 words
In the fabrication of semiconductor devices, a process for the making of diffusions, in a semiconductor body, employing a self aligning member as the means for defining the region to be diffused, comprising the steps of: providing a body of semiconductor material having a first surface and being of one conductivity type material; forming a diffusion mask on said first surface and providing an aperture therethrough for exposing a portion of said first surface, and said diffusion mask having an upper surface; forming a single crystal silicon plug adherent to said first surface exposed by said aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface of said diffusion mask; diffusing opposite type conductivity determining impurities through said plug for forming a region of opposite type conductivity having a junction with said body and extending to said first surface under said diffusion mask; removing a portion of said mask for preparing said plug for further processing such that said top surface of said single crystal plug is now positioned above the upper surface of the diffusion mask; and forming a metal electrode adherent to said plug for making electrical contact to said region.
Claim 9
Dependent Claim
59 words
The process as defined in claim 6 wherein the formation of said mask comprises the steps of: forming a first layer of an oxide of said semiconductor body; forming a silicon nitride layer on said first layer; and forming a second layer of an oxide on said nitride layer to a thickness for determining the size of said plug.
Claim 10
Dependent Claim
38 words
The process as defined in claim 6 wherein the removal of a portion of said mask comprises the steps of: removing said second layer for cleaning said plug and for preparing it for contact with said metal electrode.
Claim 11
Dependent Claim
267 words
In the fabrication of semiconductor devices, a process for the making of diffusions in a semiconductor body employing a self aligning member as the means for defining the region to be diffused, comprising the steps of: providing a body of semiconductor material having a first surface and being of one conductivity type material; forming a first mask on said first surface and providiNg a first aperture therethrough for exposing a portion of said first surface; forming a first region of opposite conductivity type within said body by passing a conductivity type determining impurity through said aperture, and said first region having a surface coplanar with said first surface; forming a second diffusion mask on said first surface and said second surface and providing a second aperture therethrough for exposing a selected portion of said second surface, and said second diffusion mask having an upper surface; forming a single crystal plug adherent to said second surface exposed by said second aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface of said diffusion mask; removing a portion of said second mask for preparing said remaining structure for forther processing such that said top surface of said single crystal plug is now positioned above the upper surface of the second diffusion mask; passing an impurity through said plug and into said first region to form a second region within said first region, said second region being opposite in conductivity to said first region; and forming a metal electrode adherent to said plug for making electrical contact to said second region.
Claim 12
Dependent Claim
267 words
In the fabrication of semiconductor devices, a process for the making of diffusions in a semiconductor body employing a self aligning member as the means for defining the region to be diffused, comprising the steps of: providing a body of semiconductor material having a first surface and being of one conductivity type material; forming a first mask on said first surface and providiNg a first aperture therethrough for exposing a portion of said first surface; forming a first region of opposite conductivity type within said body by passing a conductivity type determining impurity through said aperture, and said first region having a surface coplanar with said first surface; forming a second diffusion mask on said first surface and said second surface and providing a second aperture therethrough for exposing a selected portion of said second surface, and said second diffusion mask having an upper surface; forming a single crystal plug adherent to said second surface exposed by said second aperture and positioned wholly within said aperture, and having a top surface which is positioned below the upper surface of said diffusion mask; removing a portion of said second mask for preparing said remaining structure for forther processing such that said top surface of said single crystal plug is now positioned above the upper surface of the second diffusion mask; passing an impurity through said plug and into said first region to form a second region within said first region, said second region being opposite in conductivity to said first region; and forming a metal electrode adherent to said plug for making electrical contact to said second region.
Claim 13
Dependent Claim
47 words
The process defined in claim 9 which further includes: forming a plurality of apertures in said first mask, and passing an impurity of said opposite conductivity type through said plurality of apertures for alternately forming isolation regions and regions of said opposite conductivity type on said body.
Claim 14
Dependent Claim
59 words
The process defined in claim 9 wherein the formation of said second mask comprises the steps of: forming a first layer of an oxide on said semiconductor body; forming a silicon nitride layer on said first layer; and forming a second layer of an oxide on said nitride layer to a thickness for determining the size of said plug.
Claim 15
Dependent Claim
37 words
The process defined in claim 9 wherein the removal of a portion of said mask comprises the step of: removing said second layer for cleaning said plug and for preparing it for contact with said metal electrode.
Claim 16
Dependent Claim
59 words
The process as defined in claim 9 wherein the formation of said mask comprises the steps of: forming a first layer of an oxide of said semiconductor body; forming a silicon nitride layer on said first layer; and forming a second layer of an oxide on said nitride layer to a thickness for determining the size of said plug.
Claim 17
Dependent Claim
39 words
The process as defined in claim 9 wherein the removal of a portion of said mask comprises the steps of: removing said second oxide layer for cleaning said plug and for preparing it for contact with said metal electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-02-20 | 1976-08-21 | 1977-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-02-20 | 1980-08-21 | 1981-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-02-20 | 1984-08-21 | 1985-02-20 | $7700.00 | Window Closed / Lapsed |