Method of making an insulated gate field effect device

Abstract

Abstract An insulated gate field effect device is made by a vapor etch and epitaxial refill technique. The vapor etch into a first-type conductivity silicon substrate results in an undercutting between windows such that a cavity is developed completely beneath the insulator separating the window regions. The cavity is then refilled epitaxially with silicon of a second conductivity type; a shallow layer of heavily doped silicon of said first-type conductivity epitaxially regrown in the window area; the gate insulator oxide thinned by etching; and gate, source, and drain contacts made.

Inventors

• 👤 William B Glendinning
• 👤 Albert Mark

Bibliographic Details