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US7704765B2
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Method for manufacturing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 2007-08-09
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Granted: 2010-04-27
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Expires: 2027-08-09
Abstract
Abstract It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
Inventors
- 👤 Junya Maruyama
- 👤 Atsuo Isobe
- 👤 Susumu Okazaki
- 👤 Koichiro Tanaka
- 👤 Yoshiaki Yamamoto
- 👤 Koji Dairiki
- 👤 Tomoko Tamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:11
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D86/40; H10D86/60; H10P; H10P72/00; H10P72/70; H10P72/74; H10D86/411; H10P72/7426; H10P72/7434; H10W; H10W72/00; H10W72/071; H10W72/073
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
105 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a semiconductor element by using the crystallized semiconductor film; and separating the base film and the semiconductor element from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 2
Independent Claim
105 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a semiconductor element by using the crystallized semiconductor film; and separating the base film and the semiconductor element from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 3
Dependent Claim
35 words
The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor film is crystallized by using a continuous-wave laser or a pulsed laser with repetition rate of 10 MHz or more.
Claim 4
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 1 , wherein gas or liquid containing halide is used as an etchant for the etching.
Claim 5
Dependent Claim
38 words
The method for manufacturing a semiconductor device according to claim 1 , wherein at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide is used for the base film.
Claim 6
Independent Claim
121 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a gate insulating film over the crystallized semiconductor film; forming a gate electrode over the gate insulating film; forming a sidewall on a side surface of the gate electrode; and separating the base film from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 7
Independent Claim
121 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a gate insulating film over the crystallized semiconductor film; forming a gate electrode over the gate insulating film; forming a sidewall on a side surface of the gate electrode; and separating the base film from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 8
Dependent Claim
35 words
The method for manufacturing a semiconductor device according to claim 5 , wherein the semiconductor film is crystallized by using a continuous-wave laser or a pulsed laser with repetition rate of 10 MHz or more.
Claim 9
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 5 , wherein gas or liquid containing halide is used as an etchant for the etching.
Claim 10
Dependent Claim
38 words
The method for manufacturing a semiconductor device according to claim 5 , wherein at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide is used for the base film.
Claim 11
Independent Claim
165 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a gate insulating film over the crystallized semiconductor film; forming a gate electrode over the gate insulating film; doping an impurity element into the crystallized semiconductor film by using the gate electrode as a mask; forming a sidewall on a side surface of the gate electrode; doping an impurity element into the crystallized semiconductor film by using the sidewall as a mask to form a first impurity region and a second impurity region; and separating the base film from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 12
Independent Claim
165 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a gate insulating film over the crystallized semiconductor film; forming a gate electrode over the gate insulating film; doping an impurity element into the crystallized semiconductor film by using the gate electrode as a mask; forming a sidewall on a side surface of the gate electrode; doping an impurity element into the crystallized semiconductor film by using the sidewall as a mask to form a first impurity region and a second impurity region; and separating the base film from the buffer film and the substrate by removing the peeling layer by etching, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 13
Dependent Claim
35 words
The method for manufacturing a semiconductor device according to claim 9 , wherein the semiconductor film is crystallized by using a continuous-wave laser or a pulsed laser with repetition rate of 10 MHz or more.
Claim 14
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 9 , wherein gas or liquid containing halide is used as an etchant for the etching.
Claim 15
Dependent Claim
38 words
The method for manufacturing a semiconductor device according to claim 9 , wherein at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide is used for the base film.
Claim 16
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a first substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a semiconductor element by using the crystallized semiconductor film; separating the base film and the semiconductor element from the buffer film and the first substrate by removing the peeling layer by etching; and attaching the base film and the semiconductor element to a second substrate; wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 17
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a first substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a semiconductor element by using the crystallized semiconductor film; separating the base film and the semiconductor element from the buffer film and the first substrate by removing the peeling layer by etching; and attaching the base film and the semiconductor element to a second substrate; wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 18
Dependent Claim
35 words
The method for manufacturing a semiconductor device according to claim 13 , wherein the semiconductor film is crystallized by using a continuous-wave laser or a pulsed laser with repetition rate of 10 MHz or more.
Claim 19
Dependent Claim
26 words
The method for manufacturing a semiconductor device according to claim 13 , wherein gas or liquid containing halide is used as an etchant for the etching.
Claim 20
Dependent Claim
38 words
The method for manufacturing a semiconductor device according to claim 13 , wherein at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide is used for the base film.
Claim 21
Independent Claim
131 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a plurality of semiconductor elements by using the crystallized semiconductor film; and forming such a groove that the peeling layer is exposed between the plurality of semiconductor elements; and separating the base film and the plurality of semiconductor elements from the buffer film and the substrate by flowing etching gas from the groove to remove the peeling layer, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 22
Independent Claim
131 words
A method for manufacturing a semiconductor device comprising the steps of: forming a buffer film comprising at least one of silicon, oxygen, and nitrogen in contact with a substrate; forming a peeling layer comprising silicon in contact with the buffer film; forming a base film over the peeling layer; forming a semiconductor film over the base film; crystallizing the semiconductor film; forming a plurality of semiconductor elements by using the crystallized semiconductor film; and forming such a groove that the peeling layer is exposed between the plurality of semiconductor elements; and separating the base film and the plurality of semiconductor elements from the buffer film and the substrate by flowing etching gas from the groove to remove the peeling layer, wherein the peeling layer is crystallized in crystallizing the semiconductor film.
Claim 23
Dependent Claim
35 words
The method for manufacturing a semiconductor device according to claim 17 , wherein the semiconductor film is crystallized by using a continuous-wave laser or a pulsed laser with repetition rate of 10 MHz or more.
Claim 24
Dependent Claim
18 words
The method for manufacturing a semiconductor device according to claim 17 , wherein the etching gas contains halide.
Claim 25
Dependent Claim
38 words
The method for manufacturing a semiconductor device according to claim 17 , wherein at least one selected from the group consisting of silicon oxide, silicon oxynitride, silicon nitride, and silicon nitride oxide is used for the base film.
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