US7105448B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for peeling off semiconductor element and method for manufacturing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 2004-02-27
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Granted: 2006-09-12
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Expires: 2024-02-27
Abstract
Abstract A method for peeling off a thin film semiconductor element over an insulating surface by using a void, and a method for manufacturing a semiconductor device by transferring the peeled semiconductor element. According to the peeling method of the invention, a first base layer having a plurality of recessed portions is formed over a substrate, and a second base layer having a plurality of voids is formed on the recessed portions of the first base layer. On the second base layer, a third base layer is formed and a semiconductor element is formed thereon. Then, by separating the second base layer at an intersecting surface with the voids, the semiconductor element is peeled off from the substrate.
Inventors
- 👤 Toru Takayama
- 👤 Yasuyuki Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:48
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D86/40; H10D86/60; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7412; H10P72/743; H10P72/7434
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
89 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 2
Independent Claim
89 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 3
Independent Claim
131 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 4
Independent Claim
131 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 5
Independent Claim
101 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 6
Independent Claim
101 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 7
Independent Claim
106 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 8
Independent Claim
106 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 9
Independent Claim
139 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 10
Independent Claim
139 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 11
Independent Claim
144 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 12
Independent Claim
144 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 13
Independent Claim
143 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 14
Independent Claim
143 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 15
Independent Claim
148 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 16
Independent Claim
148 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
Claim 17
Independent Claim
192 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 18
Independent Claim
192 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 19
Independent Claim
197 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 20
Independent Claim
197 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 21
Independent Claim
135 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; and separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
Claim 22
Independent Claim
135 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; and separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
Claim 23
Independent Claim
140 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
Claim 24
Independent Claim
140 words
A method for peeling off a semiconductor element comprising: forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
Claim 25
Independent Claim
173 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 26
Independent Claim
173 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 27
Independent Claim
178 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 28
Independent Claim
178 words
A method for peeling off a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; forming a protective layer so as to cover the semiconductor element; attaching a second substrate to the protective layer and attaching a third substrate to the first substrate; and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
Claim 29
Independent Claim
99 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 30
Independent Claim
99 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 31
Independent Claim
111 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 32
Independent Claim
111 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 33
Independent Claim
145 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 34
Independent Claim
145 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and; forming a metal oxide layer on a surface of the metal layer by oxidizing; forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer and crystallizing the metal oxide layer; separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 35
Independent Claim
141 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 36
Independent Claim
141 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; forming a third base layer over the second base layer; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 37
Independent Claim
153 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 38
Independent Claim
153 words
A method for manufacturing a semiconductor element comprising: forming over a first substrate a first base layer having a plurality of recessed portions; forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions; polishing a surface of the second base layer; forming a third base layer over the second base layer whose surface is polished; forming a semiconductor element over the third base layer; forming an opening portion which extends to a part of each of a plurality of the voids; enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate; and attaching the peeled semiconductor element to a second substrate.
Claim 39
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 1 , wherein the first base layer is formed of an insulating layer.
Claim 40
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 2 , wherein the first base layer is formed of an insulating layer.
Claim 41
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 3 , wherein the first base layer is formed of an insulating layer.
Claim 42
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 4 , wherein the first base layer is formed of an insulating layer.
Claim 43
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 5 , wherein the first base layer is formed of an insulating layer.
Claim 44
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 6 , wherein the first base layer is formed of an insulating layer.
Claim 45
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 7 , wherein the first base layer is formed of an insulating layer.
Claim 46
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 8 , wherein the first base layer is formed of an insulating layer.
Claim 47
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 9 , wherein the first base layer is formed of an insulating layer.
Claim 48
Dependent Claim
24 words
A method for peeling off a semiconductor element according to claim 10 , wherein the first base layer is formed of an insulating layer.
Claim 49
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 3 , wherein the polish is performed by CMP.
Claim 50
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 4 , wherein the polish is performed by CMP.
Claim 51
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 5 , wherein the polish is performed by CMP.
Claim 52
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 6 , wherein the polish is performed by CMP.
Claim 53
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 7 , wherein the polish is performed by CMP.
Claim 54
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 8 , wherein the polish is performed by CMP.
Claim 55
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 9 , wherein the polish is performed by CMP.
Claim 56
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 10 , wherein the polish is performed by CMP.
Claim 57
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 11 , wherein the polish is performed by CMP.
Claim 58
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 12 , wherein the polish is performed by CMP.
Claim 59
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 13 , wherein the polish is performed by CMP.
Claim 60
Dependent Claim
20 words
A method for peeling off a semiconductor element according to claim 14 , wherein the polish is performed by CMP.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-09-11 | 2010-03-13 | 2010-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-09-11 | 2014-03-13 | 2014-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-09-11 | 2018-03-13 | 2018-09-12 | $7700.00 | Window Closed / Lapsed |