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US6339010B2
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US
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Semiconductor element forming process having a step of separating film structure from substrate
Assignee: Tokyo University of Agriculture and Technology
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Filing: 1998-09-14
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Granted: 2002-01-15
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Expires: 2018-09-14
Abstract
Abstract The invention provides a process of forming a semiconductor device, including the steps of: forming a separation member, used to form a separation layer, on a flat surface of a support substrate; forming support sections on the flat surface by removing portions of the separation member; forming, above the support sections, a film structure having a single layer or a plurality of layers; and separating the film structure from the Support substrate by removing the separation layer. The invention also provides a process of transferring a film structure having a single layer or a plurality of layers, including the steps of: forming a separation member used to form a separation layer on a flat surface of a first substrate; forming support sections on the flat surface by removing part of the separation member; forming, on the support sections, a film structure having a single layer or a plurality of layers; adhering a second substrate to the film structure; and separating the first substrate from the film structure by removing the separation layer.
Inventors
- 👤 Toshiyuki Sameshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:45
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; H10P; H10P14/00; H10P14/20; H10D86/40; H10D86/60; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
115 words
A method of forming a circuit device, comprising the steps of: growing a separation layer on a support substrate having a flat surface, in a gas atmosphere or a vacuum; removing a predetermined part of the separation layer by lithography and etching until the flat surface of the support substrate is exposed; growing a film structure comprising one of a single layer and a plurality of layers, above the separation layer and above the predetermined part of the separation layer that has been removed; forming a circuit device in the film structure grown on the support substrate; and separating the film structure incorporating the circuit device from the support substrate by removing the separation layer.
Claim 2
Independent Claim
115 words
A method of forming a circuit device, comprising the steps of: growing a separation layer on a support substrate having a flat surface, in a gas atmosphere or a vacuum; removing a predetermined part of the separation layer by lithography and etching until the flat surface of the support substrate is exposed; growing a film structure comprising one of a single layer and a plurality of layers, above the separation layer and above the predetermined part of the separation layer that has been removed; forming a circuit device in the film structure grown on the support substrate; and separating the film structure incorporating the circuit device from the support substrate by removing the separation layer.
Claim 3
Dependent Claim
34 words
A method according to claim 1 , wherein forming the separation layer comprises forming a layer made of a material selected from a group of chrome, nickel, tantalum, tungsten, alumina, silicon nitride and InZnO.
Claim 4
Dependent Claim
30 words
A method according to claim 1 , wherein the step of forming the circuit device includes a step of forming a transistor in at least part of the film structure.
Claim 5
Dependent Claim
32 words
A method according to claim 1 , wherein the step of forming the circuit device includes a step of forming a solar battery element in at least part of the film structure.
Claim 6
Dependent Claim
22 words
A method according to claim 1 , wherein forming the separation layer comprises forming a 1000 to 10000 nm thick separation layer.
Claim 7
Dependent Claim
29 words
A method according to claim 1 , wherein the step of separating the film structure from the support substrate includes a step of removing the separation layer by etching.
Claim 8
Dependent Claim
22 words
A method according to claim 1 , wherein forming the separation layer comprises forming a separation layer on a single support substrate.
Claim 9
Dependent Claim
91 words
A method according to claim 1 , further comprising, following the step of removing a predetermined part of the separation layer, the steps of: coating a whole surface of the support substrate including the separation layer, with a soluble material that is soluble in an organic solvent; surface removing a portion of the soluble material so as to expose the separation layer, thereby forming a flat soluble material surface; forming a protective film on said flat soluble material surface; and removing a remaining portion of the soluble material with a solvent.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-01-14 | 2005-07-16 | 2006-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-01-14 | 2009-07-16 | 2010-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-01-14 | 2013-07-16 | 2014-01-15 | $7700.00 | Window Closed / Lapsed |