Patent US7115166B2 successfully refreshed from Google Patents.
US7115166B2
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Systems and methods for forming strontium- and/or barium-containing layers
Assignee: Micron Technology Inc
•
Filing: 2004-04-21
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Granted: 2006-10-03
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Expires: 2024-04-21
Abstract
Abstract A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Stefan Uhlenbrock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/69398
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
101 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 2
Independent Claim
101 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the formed metal-containing layer has a thickness of about 10 Å to about 500 Å.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein M is strontium or barium.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein each R and R′ is independently a (C1–C10)organic group.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein the metal-containing layer is a metal oxide layer.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein the metal-containing layer is a dielectric layer.
Claim 9
Independent Claim
115 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 10
Independent Claim
115 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on a surface of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 11
Dependent Claim
40 words
The method of claim 8 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly to form a metal-containing layer.
Claim 12
Dependent Claim
70 words
The method of claim 9 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1–C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 13
Dependent Claim
18 words
The method of claim 10 wherein the formed metal-containing layer is strontium titanate, barium titanate, or barium-strontium titanate.
Claim 14
Dependent Claim
11 words
The method of claim 8 wherein M is strontium or barium.
Claim 15
Dependent Claim
14 words
The method of claim 8 wherein the metal-containing layer is a metal oxide layer.
Claim 16
Dependent Claim
13 words
The method of claim 8 wherein the metal-containing layer is a dielectric layer.
Claim 17
Independent Claim
128 words
A method of manufacturing a semiconductor structure, wherein the method comprises: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the semiconductor substrate or substrate assembly; providing one or more reaction gases; directing the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 18
Independent Claim
128 words
A method of manufacturing a semiconductor structure, wherein the method comprises: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the semiconductor substrate or substrate assembly; providing one or more reaction gases; directing the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly using a chemical vapor deposition process.
Claim 19
Dependent Claim
45 words
The method of claim 15 wherein one or more inert carrier gases are introduced into the chamber with the vapor comprising the one or more compounds of Formula I, with the one or more reaction gases, or with both the vapor and the reaction gases.
Claim 20
Dependent Claim
38 words
The method of claim 15 wherein the reaction gas is selected from the group consisting of water vapor, oxygen, ozone, hydrogen peroxide, nitrous oxide, ammonia, organic amine, silane, hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and combinations thereof.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein the reaction gas is water vapor.
Claim 22
Dependent Claim
14 words
The method of claim 15 wherein the metal-containing layer is a metal oxide layer.
Claim 23
Dependent Claim
13 words
The method of claim 15 wherein the metal-containing layer is a dielectric layer.
Claim 24
Dependent Claim
35 words
The method of claim 15 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly.
Claim 25
Dependent Claim
70 words
The method of claim 21 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1–C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 26
Dependent Claim
56 words
The method of claim 21 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the semiconductor substrate or substrate assembly prior to directing the one or more reaction gases to the semiconductor substrate or substrate assembly.
Claim 27
Dependent Claim
42 words
The method of claim 21 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the semiconductor substrate or substrate assembly substantially simultaneously.
Claim 28
Dependent Claim
115 words
The method of claim 21 comprising: providing a vapor comprising one or more precursor compounds of Formula I and directing this vapor to the semiconductor substrate or substrate assembly; providing one or more reaction gases and directing the one or more reaction gases to the semiconductor substrate or substrate assembly; providing a vapor comprising one or more precursor compounds other than those of Formula I and directing this vapor to the semiconductor substrate or substrate assembly; and providing one or more reaction gases and directing the one or more reaction gases to the semiconductor substrate or substrate assembly to form a metal-containing layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 29
Dependent Claim
31 words
The method of claim 15 wherein providing a vapor, directing the vapor, providing one or more reaction gases, and directing the one or more reaction gases is repeated at least once.
Claim 30
Dependent Claim
31 words
The method of claim 15 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1–C3)alkyl moiety.
Claim 31
Dependent Claim
37 words
The method of claim 27 wherein the Group IIA metal precursor compound is selected from the group consisting of Ba[N(SiMe 3 ) 2 ] 2 and Sr[N(SiMe 3 ) 2 ] 2 , where Me is methyl.
Claim 32
Independent Claim
91 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the substrate to form a metal-containing layer on a surface of the substrate using a chemical vapor deposition process.
Claim 33
Independent Claim
91 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; and directing the vapor comprising the one or more Group IIA metal precursor compounds to the substrate to form a metal-containing layer on a surface of the substrate using a chemical vapor deposition process.
Claim 34
Dependent Claim
11 words
The method of claim 29 wherein M is strontium or barium.
Claim 35
Dependent Claim
15 words
The method of claim 29 wherein each R and R′ is independently a (C1–C10)organic group.
Claim 36
Dependent Claim
14 words
The method of claim 29 wherein the metal-containing layer is a metal oxide layer.
Claim 37
Independent Claim
105 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the substrate to form a metal-containing layer on a surface of the substrate using a chemical vapor deposition process.
Claim 38
Independent Claim
105 words
A method of forming a layer on a substrate, the method comprising: providing a substrate; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; providing one or more reaction gases; and directing the vapor comprising the one or more Group IIA metal precursor compounds and the one or more reaction gases to the substrate to form a metal-containing layer on a surface of the substrate using a chemical vapor deposition process.
Claim 39
Dependent Claim
36 words
The method of claim 33 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the substrate to form a metal-containing layer.
Claim 40
Dependent Claim
70 words
The method of claim 34 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1–C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 41
Dependent Claim
18 words
The method of claim 35 wherein the formed metal-containing layer is strontium titanate, barium titanate, or barium-strontium titanate.
Claim 42
Dependent Claim
11 words
The method of claim 33 wherein M is strontium or barium.
Claim 43
Dependent Claim
14 words
The method of claim 33 wherein the metal-containing layer is a metal oxide layer.
Claim 44
Independent Claim
115 words
A method of forming a layer on a substrate, wherein the method comprises: providing a substrate within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the substrate; providing one or more reaction gases; and directing the one or more reaction gases to the substrate to form a metal-containing layer on one or more surfaces of the substrate using a chemical vapor deposition process.
Claim 45
Independent Claim
115 words
A method of forming a layer on a substrate, wherein the method comprises: providing a substrate within a deposition chamber; providing a vapor comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 (Formula I), wherein R and R′ are each independently an organic group, and M is selected from the group consisting of barium, strontium, calcium, and magnesium; directing the vapor comprising the one or more precursor compounds of Formula I to the substrate; providing one or more reaction gases; and directing the one or more reaction gases to the substrate to form a metal-containing layer on one or more surfaces of the substrate using a chemical vapor deposition process.
Claim 46
Dependent Claim
45 words
The method of claim 39 wherein one or more inert carrier gases are introduced into the chamber after the vapor comprising the one or more compounds of Formula I, after the one or more reaction gases, or after both the vapor and the reaction gases.
Claim 47
Dependent Claim
38 words
The method of claim 40 wherein the reaction gas is selected from the group consisting of water vapor, oxygen, ozone, hydrogen peroxide, nitrous oxide, ammonia, organic amine, silane, hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and combinations thereof.
Claim 48
Dependent Claim
12 words
The method of claim 41 wherein the reaction gas is water vapor.
Claim 49
Dependent Claim
14 words
The method of claim 40 wherein the metal-containing layer is a metal oxide layer.
Claim 50
Dependent Claim
31 words
The method of claim 39 further comprising providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I and directing this vapor to the substrate.
Claim 51
Dependent Claim
70 words
The method of claim 44 wherein providing a vapor comprising one or more metal-containing precursor compounds other than the compounds of Formula I comprises providing a vapor comprising Ti(AR 1 x ) 4 , wherein: A is O, N, C(O), or OC(O); and R 1 is a (C1–C10)alkyl group, wherein two of the R 1 alkyl groups are optionally joined together to form an alkylene group; and n=1 or 2.
Claim 52
Dependent Claim
48 words
The method of claim 44 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the substrate prior to directing the one or more reaction gases to the substrate.
Claim 53
Dependent Claim
38 words
The method of claim 44 wherein the vapor comprising the one or more compounds of Formula I and the vapor comprising one or more compounds other than those of Formula I are directed to the substrate substantially simultaneously.
Claim 54
Dependent Claim
95 words
The method of claim 44 comprising: providing a vapor comprising one or more precursor compounds of Formula I and directing this vapor to the substrate; providing one or more reaction gases and directing the one or more reaction gases to the substrate; providing a vapor comprising one or more precursor compounds other than those of Formula I and directing this vapor to the substrate; and providing one or more reaction gases and directing the one or more reaction gases to the substrate to form a metal-containing layer on one or more surfaces of the substrate.
Claim 55
Dependent Claim
32 words
The method of claim 39 wherein the providing a vapor, directing the vapor, providing one or more reaction gases, and directing the one or more reaction gases is repeated at least once.
Claim 56
Dependent Claim
31 words
The method of claim 39 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1–C3)alkyl moiety.
Claim 57
Independent Claim
119 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; vaporizing the one or more precursor compounds; directing the one or more vaporized precursor compounds to the substrate; providing one or more reaction gases; directing the one or more reaction gases to the substrate to form a dielectric layer on the first electrode of the substrate using a chemical vapor deposition process; and forming a second electrode on the dielectric layer.
Claim 58
Independent Claim
119 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium; vaporizing the one or more precursor compounds; directing the one or more vaporized precursor compounds to the substrate; providing one or more reaction gases; directing the one or more reaction gases to the substrate to form a dielectric layer on the first electrode of the substrate using a chemical vapor deposition process; and forming a second electrode on the dielectric layer.
Claim 59
Dependent Claim
31 words
The method of claim 51 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 , wherein each R″ is independently a (C1–C3)alkyl moiety.
Claim 60
Dependent Claim
58 words
An chemical vapor deposition apparatus comprising: a deposition chamber having a substrate positioned therein; and one or more vessels comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium.
Claim 61
Dependent Claim
58 words
An chemical vapor deposition apparatus comprising: a deposition chamber having a substrate positioned therein; and one or more vessels comprising one or more Group IIA metal precursor compounds of the formula M(NRR′) 2 , wherein R and R′ are each independently an organic group and M is selected from the group consisting of barium, strontium, calcium, and magnesium.
Claim 62
Dependent Claim
34 words
The apparatus of claim 53 wherein the Group IIA metal precursor compound is of the formula M[N(SiR″ 3 ) 2 ] 2 where M is strontium or barium and R″ is a (C1–C3)alkyl moiety.
References Cited (Backward Citations)
EP0442704A2
Cited
US5256244A
Cited
US5742322A
Cited
US5908947A
Cited
US6143081A
Cited
US6348412B1
Cited
US6387764B1
Cited
US6273951B1
Cited
US6203613B1
Cited
US20030188682A1
Cited
US6335049B1
Cited
US6271094B1
Cited
US6342445B1
Cited
US6730164B2
Cited
US20040096582A1
Cited
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