US6806503B2 — Light-emitting diode and laser diode having n-typ…

Claim 1

Independent Claim 140 words

An ultraviolet-light-emitting diode comprising: an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CUAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, wherein said transparent substrate is yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface, wherein said light-emitting diode further includes an indium-tin oxide (ITO) layer heteroepitaxially grown on said transparent substrate to serve as a transparent negative electrode layer, and wherein the ZnO layer is heteroepitaxially grown on the ITO layer to serve as a luminescent layer, the p-type semiconductor layer being formed on said ZnO layer to serve as a hole-injection layer.

Claim 2

Dependent Claim 140 words

An ultraviolet-light-emitting diode comprising: an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CUAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, wherein said transparent substrate is yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface, wherein said light-emitting diode further includes an indium-tin oxide (ITO) layer heteroepitaxially grown on said transparent substrate to serve as a transparent negative electrode layer, and wherein the ZnO layer is heteroepitaxially grown on the ITO layer to serve as a luminescent layer, the p-type semiconductor layer being formed on said ZnO layer to serve as a hole-injection layer.

Claim 3

Dependent Claim 48 words

A light-emitting diode as defined in claim 1 , wherein said p-type semiconductor layer is a SrCu 2 O 2 layer, wherein the p-type semiconductor layer contains 20 atom % or less of a univalent metal substituted for a Sr site of the SrCu 2 O 2 layer.

Claim 4

Independent Claim 129 words

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including SrCu 2 O 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping the substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including SrCu 2 O 2 while keeping the substrate at a temperature in the range of 200 to 800° C.

Claim 5

Independent Claim 129 words

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including SrCu 2 O 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping the substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including SrCu 2 O 2 while keeping the substrate at a temperature in the range of 200 to 800° C.

Claim 6

Independent Claim 133 words

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including one of CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping a substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including CuAlO 2 or CuGaO 2 while keeping the substrate at a temperature in the range of 500 to 800° C.

Claim 7

Independent Claim 133 words

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including one of CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping a substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including CuAlO 2 or CuGaO 2 while keeping the substrate at a temperature in the range of 500 to 800° C.

Claim 8

Independent Claim 159 words

A method for producing a light-emitting diode which including an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface without heating the substrate, irradiating the surface of the ZnO layer with ultraviolet light to promote crystallization therein, and forming on the ZnO layer the p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 without heating the substrate, and irradiating the surface of the p-type semiconductor layer with ultraviolet light to promote crystallization therein.

Claim 9

Independent Claim 159 words

A method for producing a light-emitting diode which including an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface without heating the substrate, irradiating the surface of the ZnO layer with ultraviolet light to promote crystallization therein, and forming on the ZnO layer the p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 without heating the substrate, and irradiating the surface of the p-type semiconductor layer with ultraviolet light to promote crystallization therein.

Claim 10

Independent Claim 55 words

A method as defined in either one on claims 3 to 5 , which further includes the steps of optically polishing an yttria-stabilized zirconia (YSZ) single crystal, and heating said polished YSZ single crystal at a temperature in the range of 1000 to 1300° C. to prepare the transparent substrate having an atomically flat surface.

Claim 11

Dependent Claim 149 words

An ultraviolet-light-emitting laser diode comprising: an n-type ZnO layer formed on a transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof; and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, wherein a Mg-substituted ZnO is heteroepitaxially grown on said single crystal substrate, wherein said n-type ZnO layer is heteroepitaxially grown on said Mg-substituted ZnO, and wherein said p-type semiconductor layer includes; a first p-type semiconductor layer having a relatively lower carrier concentration and serving as a hole-injection layer, and a second p-type semiconductor layer having a relatively high carrier concentration, said second p-type semiconductor layer being formed on said first p-type semiconductor layer.

Claim 12

Dependent Claim 149 words

An ultraviolet-light-emitting laser diode comprising: an n-type ZnO layer formed on a transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof; and a p-type semiconductor layer selected from the group consisting of SrCu 2 O 2 , CuAlO 2 and CuGaO 2 , said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, wherein a Mg-substituted ZnO is heteroepitaxially grown on said single crystal substrate, wherein said n-type ZnO layer is heteroepitaxially grown on said Mg-substituted ZnO, and wherein said p-type semiconductor layer includes; a first p-type semiconductor layer having a relatively lower carrier concentration and serving as a hole-injection layer, and a second p-type semiconductor layer having a relatively high carrier concentration, said second p-type semiconductor layer being formed on said first p-type semiconductor layer.

Claim 13

Dependent Claim 27 words

An ultraviolet-light-emitting diode as defined in claim 1 , which further includes a Ni layer formed on the p-type semiconductor layer to serve as a positive electrode.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2007-10-19	2008-04-19	2008-10-19	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2011-10-19	2012-04-19	2012-10-19	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2015-10-19	2016-04-19	2016-10-19	$7700.00	Window Closed / Lapsed

Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser

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