US6326645B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photonic device
Assignee: Murata Manufacturing Co Ltd
•
Filing: 1999-08-30
•
Granted: 2001-12-04
•
Expires: 2019-08-30
Abstract
Abstract A semiconductor photonic device has a Si substrate; a SiO2 film formed on the Si substrate; a ZnO film formed on the SiO2 film; and a semiconductor compound layer represented by InxGayAlzN (x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) formed on the ZnO film.
Inventors
- 👤 Michio Kadota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:29
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S2301/00; H01S2301/17; H01S2301/173; H01S5/3201
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
64 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO2 film to a thickness of at least about 100 Å on a Si substrate; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z ≦1 in communication with the ZnO film.
Claim 2
Independent Claim
64 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO2 film to a thickness of at least about 100 Å on a Si substrate; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z ≦1 in communication with the ZnO film.
Claim 3
Dependent Claim
29 words
The method of manufacturing a semiconductor photonic device according to claim 1 , wherein the SiO 2 film is formed to a thickness of at least about 300 Å.
Claim 4
Dependent Claim
23 words
The method of manufacturing a semiconductor photonic device according to claim 2 , wherein the SiO 2 film is formed by thermal oxidization.
Claim 5
Dependent Claim
23 words
The method of manufacturing a semiconductor photonic device according to claim 2 , wherein the SiO 2 film is formed by physical deposition.
Claim 6
Dependent Claim
28 words
The method of manufacturing a semiconductor photonic device according to claim 2 , wherein the SiO 2 film is formed at a temperature of 200 to 260° C.
Claim 7
Dependent Claim
22 words
The method of manufacturing a semiconductor photonic device according to claim 2 , wherein the SiO 2 film is formed by sputtering.
Claim 8
Dependent Claim
23 words
The method of manufacturing a semiconductor photonic device according to claim 1 , wherein the SiO 2 film is formed by thermal oxidization.
Claim 9
Dependent Claim
22 words
The method of manufacturing a semiconductor photonic device according to claim 1 , wherein the SiO2 film is formed by physical deposition.
Claim 10
Dependent Claim
28 words
The method of manufacturing a semiconductor photonic device according to claim 1 , wherein the SiO 2 film is formed at a temperature of 200 to 260° C.
Claim 11
Dependent Claim
22 words
The method of manufacturing a semiconductor photonic device according to claim 1 , wherein the SiO 2 film is formed by sputtering.
Claim 12
Independent Claim
62 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO 2 film on a Si substrate by thermal oxidization, physical deposition or sputtering; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1 in communication with the ZnO film.
Claim 13
Independent Claim
62 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO 2 film on a Si substrate by thermal oxidization, physical deposition or sputtering; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1 in communication with the ZnO film.
Claim 14
Independent Claim
63 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO 2 film on a Si substrate at a temperature of 200 to 260° C.; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0<x<1, 0<y<1, 0<z<1 in communication with the ZnO film.
Claim 15
Independent Claim
63 words
A method of manufacturing a semiconductor photonic device comprising: forming a SiO 2 film on a Si substrate at a temperature of 200 to 260° C.; forming a ZnO film on the SiO 2 film by sputtering; and forming a semiconductor compound layer represented by In x Ga y Al z N wherein x+y+z=1, 0<x<1, 0<y<1, 0<z<1 in communication with the ZnO film.
References Cited (Backward Citations)
JPH0875940A
Cited
JPH0883928A
Cited
JPH08139361A
Cited
JPH0945960A
Cited
US5815520A
Cited
US6168659B1
Cited
US6045626A
Cited
US6015979A
Cited
DE19931300A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-03 | 2005-06-04 | 2005-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-03 | 2009-06-04 | 2009-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-03 | 2013-06-04 | 2013-12-04 | $7700.00 | Window Closed / Lapsed |