US6015979A
Expired / Lapsed
US
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Nitride-based semiconductor element and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1998-08-28
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Granted: 2000-01-18
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Expires: 2018-08-28
Abstract
Abstract Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
Inventors
- 👤 Lisa Sugiura
- 👤 Masayuki Ishikawa
- 👤 Shinya Nunoue
- 👤 Masaaki Onomura
- 👤 Masahiro Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
113 words
A nitride-based semiconductor element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including: a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a desired element structure formed above said mask having said plurality of opening portions.
Claim 2
Dependent Claim
113 words
A nitride-based semiconductor element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including: a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a desired element structure formed above said mask having said plurality of opening portions.
Claim 3
Dependent Claim
20 words
The nitride-based semiconductor element according to claim 1, wherein said desired element structure is formed substantially on said second region.
Claim 4
Dependent Claim
36 words
The nitride-based semiconductor element according to claim 1, wherein material of said mask is inactive at a high temperature of 1000° C. or higher in an atmosphere comprising at least one of hydrogen, nitrogen and ammonia.
Claim 5
Dependent Claim
44 words
The nitride-based semiconductor element according to claim 1, wherein said first layer comprises one selected from a group consisting of AlGaN, InGaN, AlN, GaN, and materials obtained by adding B to the foregoing, Si, SiC, sapphire and a laminated film made of the foregoing.
Claim 6
Dependent Claim
39 words
The nitride-based semiconductor element according to claim 1, wherein said plurality of opening portions in said mask are each formed into a stripe-like shape extending in a direction perpendicular to an a-axis <11-20> of said nitride-based compound semiconductor layer.
Claim 7
Dependent Claim
33 words
The nitride-based semiconductor element according to claim 1, wherein a density of said threading dislocations in said nitride-based compound semiconductor layer ranges from 10 3 cm -2 to 10 7 cm -2 inclusive.
Claim 8
Dependent Claim
49 words
The nitride-based semiconductor element according to claim 1, wherein said nitride-based compound semiconductor layer includes a third region in which a plurality of dislocations extending along the surface of said mask from said plurality of opening portions in said mask, and said second region exists on said third region.
Claim 9
Dependent Claim
23 words
The nitride-based semiconductor element according to claim 1, wherein a surface of said nitride-based compound semiconductor layer on said mask is substantially flat.
Claim 10
Dependent Claim
30 words
The nitride-based semiconductor element according to claim 1, wherein said nitride-based compound semiconductor layer is composed of Ga x In y Al z B 1-x-y-z N (wherein 0≦x, y, z≦1).
Claim 11
Dependent Claim
132 words
The nitride-based semiconductor element according to claim 1, wherein said mask is constituted in such a manner that, on said first layer, either of a plurality of opening portions which are each triangular or hexagonal in shape and a plurality of un-opened portions are periodically formed, said nitride-based compound semiconductor layer comprises: said first region which is formed on said un-opened portions of said mask and in which said threading dislocations are contained in a state extending in a vertical direction to the surface of said mask; a third region which is formed on said opening portions and said un-opened portions of said mask and, in which said dislocations extend along the surface of said mask; and said second region which is formed on said third region and free from said dislocations.
Claim 12
Dependent Claim
56 words
The nitride-based semiconductor element according to claim 1, wherein said first layer has a plurality of projections periodically formed on a surface thereof, on surfaces of said projections, said un-opened portions of said mask are formed, and in said opening portions of said mask, said underlying layer forms a junction with said nitride-based compound semiconductor layer.
Claim 13
Dependent Claim
122 words
A nitride-based light emitting element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including: a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a light-emitting layer formed above said mask having said plurality of opening portions, said light-emitting layer being sandwiched between current injection layers.
Claim 14
Dependent Claim
122 words
A nitride-based light emitting element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including: a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a light-emitting layer formed above said mask having said plurality of opening portions, said light-emitting layer being sandwiched between current injection layers.
Claim 15
Dependent Claim
36 words
The nitride-based light-emitting element according to claim 12, wherein material of said mask is inactive at a high temperature of 1000° C. or higher in an atmosphere comprising at least one of hydrogen, nitrogen and ammonia.
Claim 16
Dependent Claim
45 words
The nitride-based light-emitting element according to claim 12, wherein said first layer is composed of one selected from a group consisting of AlGaN, InGaN, AlN, GaN, materials resulting from adding B into the foregoing, Si, SiC, sapphire and a laminate film made of the foregoing.
Claim 17
Dependent Claim
39 words
The nitride-based light-emitting element according to claim 12, wherein said plurality of opening portions in said mask are each formed into a stripe-like shape extending in a direction perpendicular to an a-axis <11-20> of said nitride-based compound semiconductor layer.
Claim 18
Dependent Claim
33 words
The nitride-based light-emitting element according to claim 12, wherein a density of said threading dislocations in said nitride-based compound semiconductor layer ranges from 10 3 cm -2 to 10 7 cm -2 inclusive.
Claim 19
Dependent Claim
49 words
A nitride-based semiconductor element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based flattening semiconductor layer formed on said mask; and a desired element structure formed on said mask with said nitride-based flattening semiconductor layer interposed therebetween.
Claim 20
Dependent Claim
49 words
A nitride-based semiconductor element comprising: a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based flattening semiconductor layer formed on said mask; and a desired element structure formed on said mask with said nitride-based flattening semiconductor layer interposed therebetween.
Claim 21
Dependent Claim
26 words
The nitride-based semiconductor element according to claim 7, wherein said desired element structure is a light-emitting element including an active layer sandwiched between two clad layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |