Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode; providing a precursor at a location proximate the dielectric material; laser generating an activated oxygen species from the precursor; and after the laser generating, contacting the activated oxygen species with the dielectric material.
Claim 2
Independent Claim
59 words
A method of forming a capacitor construction comprising: forming a capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode; providing a precursor at a location proximate the dielectric material; laser generating an activated oxygen species from the precursor; and after the laser generating, contacting the activated oxygen species with the dielectric material.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the dielectric material is predominantly inorganic.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein the dielectric material comprises less than 10 percent carbon, by weight.
Claim 5
Dependent Claim
21 words
The method of claim 3 wherein the less than 10 percent of carbon is less than 5 percent carbon, by weight.
Claim 6
Dependent Claim
30 words
The method of claim 1 wherein the dielectric material comprises one or more of tantalum pentoxide, aluminum oxide, hafnium oxide, titanium oxide, strontium titanate, barium strontium titanate and silicon oxynitride.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein the forming the dielectric material over the first capacitor electrode comprises chemical vapor deposition.