Patent US6682963B2 successfully refreshed from Google Patents.
US6682963B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2001-09-14
•
Granted: 2004-01-27
•
Expires: 2021-09-14
Abstract
Abstract A method of realizing an active matrix display device having flexibility is provided. Further, a method for reducing parasitic capacitance between wirings formed on different layers is provided. After fixing a second substrate to a thin film device formed on a first substrate by bonding, the first substrate is removed, and wirings and the like are formed in the thin film device. The second substrate is removed next, and an active matrix display device having flexibility is formed. Further, parasitic capacitance can be reduced by forming wirings, after removing the first substrate, on the side in which a gate electrode over an active layer is not formed.
Inventors
- 👤 Akira Ishikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:43
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0214; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10D86/40; H10D86/441; H10D86/60; H10W; H10W72/00; H10W72/01; H10W72/0198; G02F1/1333; G02F1/133305; G02F1/13613; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7434
Claims Analysis
Total Claims: 96
Claim 1
Independent Claim
123 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate, the bonding being established by one or more bonding portions of a bonding layer; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; forming at least one conductive layer contacting the thin film device through the opening portion; and cutting the second substrate so that one or more portions of the second substrate connected to the bonding portions between the thin film device and the second substrate are removed, and removing the second substrate.
Claim 2
Independent Claim
123 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate, the bonding being established by one or more bonding portions of a bonding layer; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; forming at least one conductive layer contacting the thin film device through the opening portion; and cutting the second substrate so that one or more portions of the second substrate connected to the bonding portions between the thin film device and the second substrate are removed, and removing the second substrate.
Claim 3
Dependent Claim
66 words
A method of manufacturing a semiconductor device according to claim 1 , wherein the regions in which the thin film device is formed and regions in which the thin film device is not formed are coated by using at least two types of adhesives separately, and the second substrate is bonded to the surface of the first substrate over which the thin film device is formed.
Claim 4
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device is an active matrix liquid crystal display device.
Claim 5
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device is an active matrix EL display device.
Claim 6
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising forming an insulating layer between the thin film device and the first substrate.
Claim 7
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 5 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 8
Dependent Claim
42 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising forming an insulating layer over the thin film device, wherein bonding the second substrate to the thin film device comprises bonding the second substrate to the insulating layer.
Claim 9
Dependent Claim
52 words
The method of manufacturing a semiconductor device according to claim 7 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the insulating layer.
Claim 10
Dependent Claim
53 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the thin film device.
Claim 11
Dependent Claim
21 words
The method of manufacturing a semiconductor device according to claim 1 , wherein the at least one conductive layer comprises aluminum.
Claim 12
Independent Claim
131 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device; forming an opening portion [for reaching the first thin film device bonded to the second substrate; and cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 13
Independent Claim
131 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device; forming an opening portion [for reaching the first thin film device bonded to the second substrate; and cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 14
Dependent Claim
31 words
A method of manufacturing a semiconductor device according to claim 11 , further comprising forming at least one conductive layer on the first thin film device bonded to the second substrate.
Claim 15
Dependent Claim
61 words
A method of manufacturing a semiconductor device according to claim 11 , wherein locations in which the first thin film device exists and locations in which the first thin film device does not exist are coated separately by using at least two types of adhesives, and the thin film or the second thin film device is bonded to the second substrate.
Claim 16
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is an active matrix liquid crystal display device.
Claim 17
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is an active matrix EL display device.
Claim 18
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 11 , further comprising forming an insulating layer between the first thin film device and the first substrate.
Claim 19
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 16 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 20
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 11 , further comprising forming an insulating layer over the first thin film device, wherein bonding the thin film or the second thin film device to the first thin film device comprises bonding the thin film or the second thin film device to the insulating layer.
Claim 21
Independent Claim
105 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; and cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 22
Independent Claim
105 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; and cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 23
Dependent Claim
61 words
A method of manufacturing a semiconductor device according to claim 19 , wherein locations in which the first thin film device exists and locations in which the first thin film device does not exist are coated by using at least two types of adhesives separately, and the thin film or the second thin film device is bonded to the second substrate.
Claim 24
Dependent Claim
29 words
A method of manufacturing a semiconductor device according to claim 19 , wherein the thin film bonded to the second substrate is a polarization film or a polarization plate.
Claim 25
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 19 , wherein the semiconductor device is an active matrix liquid crystal display device.
Claim 26
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 19 , wherein the semiconductor device is an active matrix EL display device.
Claim 27
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 19 , further comprising forming an insulating layer between the first thin film device arid the first substrate.
Claim 28
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 24 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 29
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 19 , further comprising forming an insulating layer over the first thin film device, wherein bonding the thin film or the second thin film device to the first thin film device comprises bonding the thin film or the second thin film device to the insulating layer.
Claim 30
Independent Claim
136 words
A method of manufacturing an active matrix liquid crystal display device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; introducing liquid crystals between the first thin film device formed over the first substrate and the thin film or the second thin film device bonded to the second substrate; and cutting the first substrate, the first thin film device, the second substrate, and the thin film or the second thin film device so that a portion of the first substrate, the first thin film device, the second substrate, and the thin film or the second thin film device is removed, and removing the second substrate, leaving the thin film or the second thin film device.
Claim 31
Independent Claim
136 words
A method of manufacturing an active matrix liquid crystal display device, the method comprising: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; introducing liquid crystals between the first thin film device formed over the first substrate and the thin film or the second thin film device bonded to the second substrate; and cutting the first substrate, the first thin film device, the second substrate, and the thin film or the second thin film device so that a portion of the first substrate, the first thin film device, the second substrate, and the thin film or the second thin film device is removed, and removing the second substrate, leaving the thin film or the second thin film device.
Claim 32
Dependent Claim
61 words
A method of manufacturing a semiconductor device according to claim 27 , wherein locations in which the first thin film device exists and locations in which the first thin film device does not exist are coated by using at least two types of adhesives separately, and the thin film or the second thin film device is bonded to the second substrate.
Claim 33
Dependent Claim
29 words
A method of manufacturing a semiconductor device according to claim 27 , wherein the thin film bonded to the second substrate is a polarization film or a polarization plate.
Claim 34
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 27 , further comprising forming an insulating layer between the first thin film device and the first substrate.
Claim 35
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 30 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 36
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 27 , further comprising forming an insulating layer over the first thin film device, wherein bonding the thin film or the second thin film device to the first thin film device comprises bonding the thin film or the second thin film device to the insulating layer.
Claim 37
Independent Claim
125 words
A method of manufacturing a semiconductor device, the method comprising: forming a thin film device over one surface of a first substrate; forming an electrode on the thin film device; bonding the thin film device formed over the first substrate to a second substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; cutting the second substrate so that a bonding portion between the thin film device and the second substrate is removed, and removing the second substrate; and overlapping a plurality of thin film devices obtained by repeating all of the preceding steps, and making electrodes formed on the top and the bottom of the thin film devices conductive.
Claim 38
Independent Claim
125 words
A method of manufacturing a semiconductor device, the method comprising: forming a thin film device over one surface of a first substrate; forming an electrode on the thin film device; bonding the thin film device formed over the first substrate to a second substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; cutting the second substrate so that a bonding portion between the thin film device and the second substrate is removed, and removing the second substrate; and overlapping a plurality of thin film devices obtained by repeating all of the preceding steps, and making electrodes formed on the top and the bottom of the thin film devices conductive.
Claim 39
Dependent Claim
66 words
A method of manufacturing a semiconductor device according to claim 33 , wherein the regions in which the thin film device is formed and regions in which the thin film device is not formed are coated by using at least two types of adhesives separately, and a second substrate is bonded to the surface of the first substrate over which the thin film device is formed.
Claim 40
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 33 , wherein at least one conductive layer is formed in the opening portion to supply an electrode.
Claim 41
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 33 , further comprising forming an insulating layer between the thin film device and the first substrate.
Claim 42
Dependent Claim
42 words
The method of manufacturing a semiconductor device according to claim 33 , further comprising forming an insulating layer over the thin film device, wherein bonding the second substrate to the thin film device comprises bonding the second substrate to the insulating layer.
Claim 43
Dependent Claim
52 words
The method of manufacturing a semiconductor device according to claim 33 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the insulating layer.
Claim 44
Dependent Claim
53 words
The method of manufacturing a semiconductor device according to claim 33 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the thin film device.
Claim 45
Dependent Claim
21 words
The method of manufacturing a semiconductor device according to claim 33 , wherein the at least one conductive layer comprises aluminum.
Claim 46
Independent Claim
185 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; forming an electrode over the first thin film device; bonding a thin film or a second thin film device to a second substrate; forming an opening portion in the thin film or the second thin film device; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device on the second substrate; forming an opening portion for reaching the first thin film device bonded to the second substrate; cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed; removing only the second substrate, leaving the thin film or the second thin film device; overlapping a plurality of thin film devices obtained by repeating all the preceding steps; and making electrodes formed on the top and bottom of the thin film devices conductive.
Claim 47
Independent Claim
185 words
A method of manufacturing a semiconductor device, the method comprising: forming a first thin film device over one surface of a first substrate; forming an electrode over the first thin film device; bonding a thin film or a second thin film device to a second substrate; forming an opening portion in the thin film or the second thin film device; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device on the second substrate; forming an opening portion for reaching the first thin film device bonded to the second substrate; cutting the second substrate so that a bonding portion between the thin film or the second thin film device and the second substrate is removed; removing only the second substrate, leaving the thin film or the second thin film device; overlapping a plurality of thin film devices obtained by repeating all the preceding steps; and making electrodes formed on the top and bottom of the thin film devices conductive.
Claim 48
Dependent Claim
68 words
A method of manufacturing a semiconductor device according to claim 41 , wherein the regions in which the first thin film device is formed and regions in which the first thin film device is not formed are coated by using at least two types of adhesives separately, and the second substrate is bonded to the surface of the first substrate over which the thin film device is formed.
Claim 49
Dependent Claim
28 words
A method of manufacturing a semiconductor device according to claim 41 , further comprising forming at least one conductive layer in the opening portion to supply an electrode.
Claim 50
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 41 , further comprising forming an insulating layer between the first thin film device and the first substrate.
Claim 51
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 44 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 52
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 41 , further comprising forming an insulating layer over the first thin film device, wherein bonding the thin film or the second thin film device to the first thin film device comprises bonding the thin film or the second thin film device to the insulating layer.
Claim 53
Independent Claim
102 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate, the bonding being established by one or more bonding portions of a bonding layer; removing the first substrate; forming an opening portion in the thin film device bonded to the second substrate; and cutting the second substrate so that one or more portions of the second substrate connected to the bonding portions between the thin film device and the second substrate are removed, and removing the second substrate.
Claim 54
Independent Claim
102 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate, the bonding being established by one or more bonding portions of a bonding layer; removing the first substrate; forming an opening portion in the thin film device bonded to the second substrate; and cutting the second substrate so that one or more portions of the second substrate connected to the bonding portions between the thin film device and the second substrate are removed, and removing the second substrate.
Claim 55
Dependent Claim
30 words
A method of manufacturing a semiconductor device according to claim 47 , further comprising forming at least one conductive layer in the thin film device retained on the second substrate.
Claim 56
Dependent Claim
21 words
The method of manufacturing a semiconductor device according to claim 48 , wherein the at least one conductive layer comprises aluminum.
Claim 57
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 47 , wherein the semiconductor device is a self light emitting display device.
Claim 58
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 47 , wherein the semiconductor device is a transmission type display device.
Claim 59
Dependent Claim
22 words
A method of manufacturing a semiconductor device according to claim 47 , wherein the semiconductor device is a reflection type display device.
Claim 60
Dependent Claim
24 words
A method of manufacturing a semiconductor device according to claim 47 , wherein the semiconductor device is an active matrix liquid crystal display device.
Claim 61
Dependent Claim
23 words
A method of manufacturing a semiconductor device according to claim 47 , wherein the semiconductor device is an active matrix EL display device.
Claim 62
Dependent Claim
27 words
A method of forming a semiconductor device according to claim 47 , wherein the semiconductor device is an integrated circuit using SOI (silicon on insulator) structure elements.
Claim 63
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 47 , further comprising forming an insulating layer between the thin film device and the first substrate.
Claim 64
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 56 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 65
Dependent Claim
42 words
The method of manufacturing a semiconductor device according to claim 47 , further comprising forming an insulating layer over the thin film device, wherein bonding the second substrate to the thin film device comprises bonding the second substrate to the insulating layer.
Claim 66
Dependent Claim
52 words
The method of manufacturing a semiconductor device according to claim 58 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the insulating layer.
Claim 67
Dependent Claim
53 words
The method of manufacturing a semiconductor device according to claim 47 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the thin film device.
Claim 68
Independent Claim
84 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; and cutting the second substrate so that a bonding portion between the thin film device and the second substrate is removed, and removing the second substrate.
Claim 69
Independent Claim
84 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over a first substrate; bonding a second substrate to the thin film device formed over the first substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; and cutting the second substrate so that a bonding portion between the thin film device and the second substrate is removed, and removing the second substrate.
Claim 70
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 61 , further comprising forming an insulating layer between the thin film device and the first substrate.
Claim 71
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 62 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 72
Dependent Claim
42 words
The method of manufacturing a semiconductor device according to claim 61 , further comprising forming an insulating layer over the thin film device, wherein bonding the second substrate to the thin film device comprises bonding the second substrate to the insulating layer.
Claim 73
Dependent Claim
52 words
The method of manufacturing a semiconductor device according to claim 64 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the insulating layer.
Claim 74
Dependent Claim
53 words
The method of manufacturing a semiconductor device according to claim 61 , further comprising bonding a polarization film or a polarization plate to the second substrate using the bonding layer, wherein bonding the second substrate to the thin film device comprises bonding the polarization film or polarization plate to the thin film device.
Claim 75
Independent Claim
149 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device; forming at least a conductive film over the first thin film device bonded to the second substrate; forming an opening portion for reaching the first thin film device bonded to the second substrate; and cutting the second substrate so that the bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 76
Independent Claim
149 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first thin film device over one surface of a first substrate; bonding a thin film or a second thin film device to a second substrate; bonding the thin film or the second thin film device bonded to the second substrate to the first thin film device formed over the first substrate; removing the first substrate, leaving the first thin film device; forming at least a conductive film over the first thin film device bonded to the second substrate; forming an opening portion for reaching the first thin film device bonded to the second substrate; and cutting the second substrate so that the bonding portion between the thin film or the second thin film device and the second substrate is removed, and removing only the second substrate, leaving the thin film or the second thin film device.
Claim 77
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 67 , further comprising forming an insulating layer between the first thin film device and the first substrate.
Claim 78
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 68 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 79
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 67 , further comprising forming an insulating layer over the first thin film device, wherein bonding the thin film or the second thin film device to the first thin film device comprises bonding the thin film or the second thin film device to the insulating layer.
Claim 80
Independent Claim
120 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over one surface of a first substrate; bonding a polarization film or a polarization plate to a second substrate; bonding the polarization film or the polarization plate bonded to the second substrate to the thin film device formed over the first substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; cutting the second substrate so that the a bonding portion between the polarization film or the polarization plate and the second substrate is removed; and removing only the second substrate, leaving the polarization film or the polarization plate.
Claim 81
Independent Claim
120 words
A method of manufacturing a semiconductor device comprising the steps of: forming a thin film device over one surface of a first substrate; bonding a polarization film or a polarization plate to a second substrate; bonding the polarization film or the polarization plate bonded to the second substrate to the thin film device formed over the first substrate; removing the first substrate, leaving the thin film device; forming an opening portion for reaching the thin film device bonded to the second substrate; cutting the second substrate so that the a bonding portion between the polarization film or the polarization plate and the second substrate is removed; and removing only the second substrate, leaving the polarization film or the polarization plate.
Claim 82
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 71 , further comprising forming an insulating layer between the first thin film device and the first substrate.
Claim 83
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 72 , wherein forming an opening portion comprises forming an opening portion in the insulating layer.
Claim 84
Dependent Claim
50 words
The method of manufacturing a semiconductor device according to claim 71 , further comprising forming an insulating layer over the thin film device, wherein bonding the polarization film or the polarization plate to the thin film device comprises bonding the polarization film or the polarization plate to the insulating layer.
Claim 85
Independent Claim
93 words
A method of manufacturing a semiconductor device, the method comprising: forming a semiconductor layer over a first substrate; forming an insulating film over the semiconductor layer; bonding a second substrate to the first substrate with at least the semiconductor layer and the insulating film interposed therebetween, the bonding being established by at least one bonding portion of a bonding layer; removing the first substrate; cutting the second substrate so that at least a portion of the second substrate connected to the at least one bonding portion is removed; and removing the second substrate.
Claim 86
Independent Claim
93 words
A method of manufacturing a semiconductor device, the method comprising: forming a semiconductor layer over a first substrate; forming an insulating film over the semiconductor layer; bonding a second substrate to the first substrate with at least the semiconductor layer and the insulating film interposed therebetween, the bonding being established by at least one bonding portion of a bonding layer; removing the first substrate; cutting the second substrate so that at least a portion of the second substrate connected to the at least one bonding portion is removed; and removing the second substrate.
Claim 87
Dependent Claim
27 words
A method of manufacturing a semiconductor device according to claim 75 , further comprising crystallizing the semiconductor layer before bonding the second substrate to the first substrate.
Claim 88
Dependent Claim
52 words
The method of manufacturing a semiconductor device according to claim 75 , wherein: the bonding layer is formed between the second substrate and a polarization film or a polarization plate; and bonding the second substrate to the first substrate comprises bonding the polarization film or the polarization plate to the insulating layer.
Claim 89
Dependent Claim
30 words
The method of manufacturing a semiconductor device according to claim 75 , wherein the bonding layer includes the at least one bonding portion and at least one weak adhesive portion.
Claim 90
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 75 , further comprising forming a second insulating film between the semiconductor layer and the first substrate.
Claim 91
Independent Claim
132 words
A method of manufacturing a semiconductor device, the method comprising: forming a first insulating layer over a first substrate; forming a semiconductor layer over the first insulating layer; forming a second insulating layer over the semiconductor layer; bonding a second substrate to the first substrate with at least the semiconductor layer and the first and second insulating layers interposed therebetween, the bonding being established by at least one bonding portion of a bonding layer; removing the first substrate; forming an opening in the first insulating layer to expose the semiconductor layer; forming a conductive layer that contacts the semiconductor layer through the opening; cutting the second substrate so that at least a portion of the second substrate connected to the at least one bonding portion is removed; and removing the second substrate.
Claim 92
Independent Claim
132 words
A method of manufacturing a semiconductor device, the method comprising: forming a first insulating layer over a first substrate; forming a semiconductor layer over the first insulating layer; forming a second insulating layer over the semiconductor layer; bonding a second substrate to the first substrate with at least the semiconductor layer and the first and second insulating layers interposed therebetween, the bonding being established by at least one bonding portion of a bonding layer; removing the first substrate; forming an opening in the first insulating layer to expose the semiconductor layer; forming a conductive layer that contacts the semiconductor layer through the opening; cutting the second substrate so that at least a portion of the second substrate connected to the at least one bonding portion is removed; and removing the second substrate.
Claim 93
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 80 , further comprising crystallizing the semiconductor layer before bonding the second substrate to the first substrate.
Claim 94
Dependent Claim
53 words
The method of manufacturing a semiconductor device according to claim 80 , wherein: the bonding layer is formed between the second substrate and a polarization film or a polarization plate; and bonding the second substrate to the first substrate comprises bonding the polarization film or the polarization plate to the second insulating layer.
Claim 95
Dependent Claim
30 words
The method of manufacturing a semiconductor device according to claim 80 , wherein the bonding layer includes the at least one bonding portion and at least one weak adhesive portion.
Claim 96
Dependent Claim
18 words
The method of manufacturing a semiconductor device according to claim 80 , wherein the conductive layer comprises aluminum.
References Cited (Backward Citations)
US5376561A
Cited
US6317175B1
Cited
US5643826A
Cited
US5757456A
Cited
US5834327A
Cited
US5766977A
Cited
US5953595A
Cited
US6022792A
Cited
US6127199A
Cited
US6133626A
Cited
US6423614B1
Cited
US6258623B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-01-26 | 2007-07-28 | 2008-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-01-26 | 2011-07-28 | 2012-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-01-26 | 2015-07-28 | 2016-01-27 | $7700.00 | Window Closed / Lapsed |