US5766977A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-03-27
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Granted: 1998-06-16
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Expires: 2016-03-27
Abstract
Abstract In producing a semiconductor device using silicon semiconductor, thermal processing is performed in an atmosphere containing hydrogen. At this time, active hydrogen is generated by contacting the hydrogen to a heated nickel material. For example, a pipe which an inner surface thereof is covered with the nickel material is heated by a heater and a hydrogen gas is introduced into the pipe, in order to generate the active hydrogen, so that a semiconductor device formed on a resin substrate having a low heat resistance is annealed using the active hydrogen while maintaining at 150° C. ±20° C. for a desired period of time.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:18
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10P; H10P72/00; H10P72/04; H10P72/0402; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P72/0431; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
74 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate in a chamber; forming an insulating film on the semiconductor film; forming a wiring comprising aluminum on the insulating film; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and performing annealing using the hydrogen active species at a temperature of 150°+20° C.
Claim 2
Independent Claim
74 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate in a chamber; forming an insulating film on the semiconductor film; forming a wiring comprising aluminum on the insulating film; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and performing annealing using the hydrogen active species at a temperature of 150°+20° C.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein the substrate comprises a glass substrate.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the substrate comprises a resin substrate.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein the annealing is performed at a temperature that the aluminum is not diffused into the insulating film.
Claim 6
Dependent Claim
12 words
A method according to claim 1 wherein the wiring further comprises nickel.
Claim 7
Dependent Claim
58 words
A semiconductor device producing method comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor device using the hydrogen active species at 150° C.±20° C.
Claim 8
Dependent Claim
58 words
A semiconductor device producing method comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor device using the hydrogen active species at 150° C.±20° C.
Claim 9
Dependent Claim
12 words
A method according to claim 6 wherein the wiring further comprises nickel.
Claim 10
Independent Claim
87 words
A method for producing a semiconductor device comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; forming a material including nickel on an inner surface of a pipe connected to the chamber; heating the pipe; introducing a gas including hydrogen inside the pipe, to generate a hydrogen active species by contacting the heated material including nickel to the gas including hydrogen; and thermal-processing the semiconductor device using the hydrogen active species at a temperature of 150+20 C.
Claim 11
Independent Claim
87 words
A method for producing a semiconductor device comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; forming a material including nickel on an inner surface of a pipe connected to the chamber; heating the pipe; introducing a gas including hydrogen inside the pipe, to generate a hydrogen active species by contacting the heated material including nickel to the gas including hydrogen; and thermal-processing the semiconductor device using the hydrogen active species at a temperature of 150+20 C.
Claim 12
Dependent Claim
12 words
A method according to claim 8 wherein the wiring further comprises nickel.
Claim 13
Independent Claim
65 words
A method for producing a liquid crystal display device comprising the steps of: placing a semiconductor integrated circuit in a chamber, said semiconductor integrated circuit comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor integrated circuit using the hydrogen active species at 150 C.±20 C.
Claim 14
Independent Claim
65 words
A method for producing a liquid crystal display device comprising the steps of: placing a semiconductor integrated circuit in a chamber, said semiconductor integrated circuit comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor integrated circuit using the hydrogen active species at 150 C.±20 C.
Claim 15
Dependent Claim
12 words
A method according to claim 10 wherein the wiring further comprises nickel.
References Cited (Backward Citations)
US4113514A
Cited
JPS5550663A
Cited
JPS5550664A
Cited
US4605447A
Cited
JPH05144804A
Cited
US5395804A
Cited
US5397719A
Cited
US5470763A
Cited
US5504020A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |