Patent US5766977A successfully refreshed from Google Patents.
US5766977A
Expired / Lapsed
US
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Method for producing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-03-27
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Granted: 1998-06-16
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Expires: 2016-03-27
Abstract
Abstract In producing a semiconductor device using silicon semiconductor, thermal processing is performed in an atmosphere containing hydrogen. At this time, active hydrogen is generated by contacting the hydrogen to a heated nickel material. For example, a pipe which an inner surface thereof is covered with the nickel material is heated by a heater and a hydrogen gas is introduced into the pipe, in order to generate the active hydrogen, so that a semiconductor device formed on a resin substrate having a low heat resistance is annealed using the active hydrogen while maintaining at 150° C. ±20° C. for a desired period of time.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10P; H10P72/00; H10P72/04; H10P72/0402; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P72/0431; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
74 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate in a chamber; forming an insulating film on the semiconductor film; forming a wiring comprising aluminum on the insulating film; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and performing annealing using the hydrogen active species at a temperature of 150°+20° C.
Claim 2
Independent Claim
74 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate in a chamber; forming an insulating film on the semiconductor film; forming a wiring comprising aluminum on the insulating film; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and performing annealing using the hydrogen active species at a temperature of 150°+20° C.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein the substrate comprises a glass substrate.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the substrate comprises a resin substrate.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein the annealing is performed at a temperature that the aluminum is not diffused into the insulating film.
Claim 6
Dependent Claim
12 words
A method according to claim 1 wherein the wiring further comprises nickel.
Claim 7
Dependent Claim
58 words
A semiconductor device producing method comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor device using the hydrogen active species at 150° C.±20° C.
Claim 8
Dependent Claim
58 words
A semiconductor device producing method comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor device using the hydrogen active species at 150° C.±20° C.
Claim 9
Dependent Claim
12 words
A method according to claim 6 wherein the wiring further comprises nickel.
Claim 10
Independent Claim
87 words
A method for producing a semiconductor device comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; forming a material including nickel on an inner surface of a pipe connected to the chamber; heating the pipe; introducing a gas including hydrogen inside the pipe, to generate a hydrogen active species by contacting the heated material including nickel to the gas including hydrogen; and thermal-processing the semiconductor device using the hydrogen active species at a temperature of 150+20 C.
Claim 11
Independent Claim
87 words
A method for producing a semiconductor device comprising the steps of: placing a semiconductor device in a chamber, said semiconductor device comprising a wiring including aluminum; forming a material including nickel on an inner surface of a pipe connected to the chamber; heating the pipe; introducing a gas including hydrogen inside the pipe, to generate a hydrogen active species by contacting the heated material including nickel to the gas including hydrogen; and thermal-processing the semiconductor device using the hydrogen active species at a temperature of 150+20 C.
Claim 12
Dependent Claim
12 words
A method according to claim 8 wherein the wiring further comprises nickel.
Claim 13
Independent Claim
65 words
A method for producing a liquid crystal display device comprising the steps of: placing a semiconductor integrated circuit in a chamber, said semiconductor integrated circuit comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor integrated circuit using the hydrogen active species at 150 C.±20 C.
Claim 14
Independent Claim
65 words
A method for producing a liquid crystal display device comprising the steps of: placing a semiconductor integrated circuit in a chamber, said semiconductor integrated circuit comprising a wiring including aluminum; generating a hydrogen active species in the chamber by reacting a heated material including nickel with a gas including hydrogen; and annealing the semiconductor integrated circuit using the hydrogen active species at 150 C.±20 C.
Claim 15
Dependent Claim
12 words
A method according to claim 10 wherein the wiring further comprises nickel.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |