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US6664154B1
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Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
Assignee: GlobalFoundries US Inc
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Filing: 2002-06-28
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Granted: 2003-12-16
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Expires: 2022-06-28
Abstract
Abstract An exemplary embodiment relates to a method of using amorphous carbon in replacement gate integration processes. The method can include depositing an amorphous carbon layer above a substrate, patterning the amorphous carbon layer, depositing a dielectric layer over the patterned amorphous carbon layer, removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer, removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer, and forming a metal gate in the aperture of the dielectric layer.
Inventors
- 👤 Scott A. Bell
- 👤 Srikanteswara Dakshina-Murthy
- 👤 Philip A. Fisher
- 👤 Cyrus E. Tabery
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/017; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/01318; H10D64/0132; H10D64/60; H10D64/66; H10D64/665; H10D64/667; H10D64/668
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
80 words
A method of using amorphous carbon in replacement gate integration processes, the method comprises: depositing an amorphous carbon layer above a substrate; patterning the amorphous carbon layer; depositing a dielectric layer over the patterned amorphous carbon layer; removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer; removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer; and forming a metal gate in the aperture of the dielectric layer.
Claim 2
Independent Claim
80 words
A method of using amorphous carbon in replacement gate integration processes, the method comprises: depositing an amorphous carbon layer above a substrate; patterning the amorphous carbon layer; depositing a dielectric layer over the patterned amorphous carbon layer; removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer; removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer; and forming a metal gate in the aperture of the dielectric layer.
Claim 3
Dependent Claim
21 words
The method of claim 1 , wherein a gate dielectric layer is located between the amorphous carbon layer and the substrate.
Claim 4
Dependent Claim
32 words
The method of claim 1 , wherein removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer includes performing a chemical mechanical polish (CMP).
Claim 5
Dependent Claim
32 words
The method of claim 1 , wherein removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer includes ashing away the patterned amorphous carbon layer with O 2 plasma.
Claim 6
Dependent Claim
41 words
The method of claim 1 , wherein forming a metal gate in the aperture of the dielectric layer includes depositing metal material and chemical mechanical polishing the metal material to a level substantially planar with a top of the dielectric layer.
Claim 7
Dependent Claim
14 words
The method of claim 1 , wherein the dielectric layer is a TEOS layer.
Claim 8
Dependent Claim
22 words
The method of claim 1 , wherein the patterned amorphous carbon layer has a width of between 50 nm and 800 nm.
Claim 9
Dependent Claim
20 words
The method of claim 1 , wherein the metal gate has a critical dimension of 5 nm to 150 nm.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein the metal gate includes the material of Mo.
Claim 11
Independent Claim
71 words
A method of forming a metal gate using a sacrificial amorphous carbon structure, the method comprising: patterning an amorphous carbon layer to form a sacrificial amorphous carbon structure; forming a material layer over the sacrificial amorphous carbon structure; polishing the material layer to expose the sacrificial amorphous carbon structure; removing the sacrificial amorphous carbon structure, and forming a metal gate structure where the sacrificial amorphous carbon structure was located before removal.
Claim 12
Independent Claim
71 words
A method of forming a metal gate using a sacrificial amorphous carbon structure, the method comprising: patterning an amorphous carbon layer to form a sacrificial amorphous carbon structure; forming a material layer over the sacrificial amorphous carbon structure; polishing the material layer to expose the sacrificial amorphous carbon structure; removing the sacrificial amorphous carbon structure, and forming a metal gate structure where the sacrificial amorphous carbon structure was located before removal.
Claim 13
Dependent Claim
14 words
The method of claim 10 , wherein the material layer is a TEOS layer.
Claim 14
Dependent Claim
23 words
The method of claim 10 , wherein the metal gate structure has a critical dimension (CD) of between 5 nm and 150 nm.
Claim 15
Dependent Claim
24 words
The method of claim 10 , wherein removing the sacrificial amorphous carbon structure includes ashing the sacrificial amorphous carbon structure with O 2 plasma.
Claim 16
Dependent Claim
37 words
The method of claim 10 , wherein forming a metal gate structure where the sacrificial amorphous carbon structure was located before removal includes depositing a metal material and polishing the deposited metal material to the material layer.
Claim 17
Dependent Claim
13 words
The method of claim 14 , wherein the metal material is tungsten (W).
Claim 18
Independent Claim
73 words
A method of using amorphous carbon in the formation of a metal structure, the method comprising: forming an amorphous carbon structure having a critical dimension corresponding to a desired critical dimension for a metal structure; forming a first oxide layer adjacent a first side of the amorphous carbon structure and a second oxide layer adjacent a second side of the amorphous carbon structure; and replacing the amorphous carbon structure with a metal structure.
Claim 19
Independent Claim
73 words
A method of using amorphous carbon in the formation of a metal structure, the method comprising: forming an amorphous carbon structure having a critical dimension corresponding to a desired critical dimension for a metal structure; forming a first oxide layer adjacent a first side of the amorphous carbon structure and a second oxide layer adjacent a second side of the amorphous carbon structure; and replacing the amorphous carbon structure with a metal structure.
Claim 20
Dependent Claim
13 words
The method of claim 16 , wherein the metal structure is a gate.
Claim 21
Dependent Claim
16 words
The method of claim 16 , wherein the critical dimension is 5 nm to 150 nm.
Claim 22
Dependent Claim
23 words
The method of claim 16 , wherein replacing the amorphous carbon structure with a metal structure includes ashing away the amorphous carbon structure.
Claim 23
Dependent Claim
17 words
The method of claim 16 , wherein the amorphous carbon structure is formed over a dielectric layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-12-15 | 2007-06-16 | 2007-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-12-15 | 2011-06-16 | 2011-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-12-15 | 2015-06-16 | 2015-12-16 | $7700.00 | Window Closed / Lapsed |