US6479336B2
Expired / Lapsed
US
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Method for fabricating semiconductor device
Assignee: SK Hynix Inc
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Filing: 2001-06-21
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Granted: 2002-11-12
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Expires: 2021-06-21
Abstract
Abstract In the method of fabrication a structure is formed on a semiconductor substrate. The structure includes a tungsten suicide film. A contact hole is formed in the structure, and an oxidation process is conducted such that if a portion of the tungsten silicide film is exposed by the contact hole, a silicon oxide film is formed on the exposed portion of the tungsten silicide film.
Inventors
- 👤 Tae Kyun Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H10; H10P; H10P10/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/017; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
205 words
A method for fabricating a MOSFET device comprising the steps of: forming a sacrificial gate on an active region of a silicon substrate; forming a source/drain region on the active regions of the silicon substrate at sides of the sacrificial gate; forming a first interlayer insulating film on the silicon substrate while exposing the sacrificial gate; removing the exposed sacrificial gate to form a groove; forming a gate insulating film and a tungsten film over the silicon substrate; polishing the tungsten film and the gate insulating film to form a tungsten gate in the groove; forming a polysilicon film over the resultant substrate including the tungsten gate; forming a tungsten silicide film self-aligned at an interface between the polysilicon film and the tungsten gate; polishing the polysilicon film and the tungsten silicide to expose the first interlayer insulating film; forming a second interlayer insulating film over the silicon substrate; forming a contact hole exposing the source/drain region by etching a predetermined parts of the first and second interlayer insulating films; conducting of oxidization process such that if a portion of the tungsten silicide film is exposed, a silicon oxide film is formed on the exposed portion; and forming a contact plug within the contact hole.
Claim 2
Independent Claim
205 words
A method for fabricating a MOSFET device comprising the steps of: forming a sacrificial gate on an active region of a silicon substrate; forming a source/drain region on the active regions of the silicon substrate at sides of the sacrificial gate; forming a first interlayer insulating film on the silicon substrate while exposing the sacrificial gate; removing the exposed sacrificial gate to form a groove; forming a gate insulating film and a tungsten film over the silicon substrate; polishing the tungsten film and the gate insulating film to form a tungsten gate in the groove; forming a polysilicon film over the resultant substrate including the tungsten gate; forming a tungsten silicide film self-aligned at an interface between the polysilicon film and the tungsten gate; polishing the polysilicon film and the tungsten silicide to expose the first interlayer insulating film; forming a second interlayer insulating film over the silicon substrate; forming a contact hole exposing the source/drain region by etching a predetermined parts of the first and second interlayer insulating films; conducting of oxidization process such that if a portion of the tungsten silicide film is exposed, a silicon oxide film is formed on the exposed portion; and forming a contact plug within the contact hole.
Claim 3
Dependent Claim
21 words
The method according to claim 1 , wherein the polysilicon film is deposited to a thickness of 100 to 300 Å.
Claim 4
Dependent Claim
41 words
The method according to claim 1 , wherein the tungsten silicide film is formed by a furnace annealing process, which is carried out for 10 to 30 minutes in an atmosphere containing N at a temperature of 600 to 800° C.
Claim 5
Dependent Claim
39 words
The method according to claim 1 , wherein the tungsten silicide film is formed by a rapid thermal annealing (RTA) process for 10 to 30 seconds in an atmosphere containing N at a temperature of 700 to 900° C.
Claim 6
Dependent Claim
40 words
The method according to claim 1 , further comprising: implanting an n type dopant at a dose of 1˜5×10 15 ions/cm 2 and an energy of 20 to 40 keV into the tungsten silicide film prior to the polishing step.
Claim 7
Dependent Claim
39 words
The method according to claim 1 , further comprising: implanting an n type dopant at a dose of 1˜5×10 15 ions/cm 2 and an energy of 20 to 40 keV into the tungsten suicide film after the polishing step.
Claim 8
Dependent Claim
22 words
The method according to claim 1 , wherein the conducting an oxidation process step includes a furnace annealing and a thermal oxidation.
Claim 9
Dependent Claim
32 words
The method according to claim 7 , wherein the furnace annealing is carried out for 30 to 60 minutes in an atmosphere containing N at a temperature of 800 to 900° C.
Claim 10
Dependent Claim
36 words
The method according to claim 7 , wherein the thermal oxidation is carried out at a temperature of 700 to 800° C. to form a silicon oxide film having a thickness of 100 to 300 Å.
Claim 11
Dependent Claim
13 words
The method of claim 1 , further comprising: doping the tungsten silicide film.
Claim 12
Dependent Claim
17 words
The method of claim 10 , wherein the doping step is performed prior to the polishing step.
Claim 13
Dependent Claim
16 words
The method of claim 10 , wherein the doping step is performed after the polishing step.
Claim 14
Independent Claim
73 words
A method of fabrication, comprising: forming a structure on a semiconductor substrate, the structure including a gate structure formed of a tungsten silicide film and a silicon oxide film; forming a contact hole near the gate structure; and conducting an oxidation process such that if a portion of the tungsten silicide film is exposed by the contact hole, the silicon oxide film is formed on the exposed portion of the tungsten silicide film.
Claim 15
Independent Claim
73 words
A method of fabrication, comprising: forming a structure on a semiconductor substrate, the structure including a gate structure formed of a tungsten silicide film and a silicon oxide film; forming a contact hole near the gate structure; and conducting an oxidation process such that if a portion of the tungsten silicide film is exposed by the contact hole, the silicon oxide film is formed on the exposed portion of the tungsten silicide film.
Claim 16
Dependent Claim
22 words
The method according to claim 13 , wherein the conducting an oxidation process step includes a furnace annealing and a thermal oxidation.
Claim 17
Dependent Claim
32 words
The method according to claim 14 , wherein the furnace annealing is carried out for 30 to 60 minutes in an atmosphere containing N at a temperature of 800 to 900° C.
Claim 18
Dependent Claim
36 words
The method according to claim 15 , wherein the thermal oxidation is carried out at a temperature of 700 to 800° C. to form a silicon oxide film having a thickness of 100 to 300 Å.
References Cited (Backward Citations)
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