Patent US6597009B2 successfully refreshed from Google Patents.
US6597009B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reduced contact area of sidewall conductor
Assignee: Intel Corp
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Filing: 2002-01-04
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Granted: 2003-07-22
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Expires: 2022-01-04
Abstract
Abstract A method including, in a dielectric material over a contact on a substrate, forming a trench to the contact; introducing an electrode material along the sidewalls of the trench; introducing a phase change material over material along a first sidewall; and modifying the electrode material along the sidewalls such that only the material along the first sidewall acts as a conductive path between the contact and the phase change material. An apparatus including a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Inventors
- 👤 Guy C. Wicker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10B; H10B63/00; H10B63/10; H10B63/20; H10N; H10N70/00; H10N70/011; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828; H10W20/063; H10W20/0636; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
49 words
An apparatus comprising: a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Claim 2
Independent Claim
49 words
An apparatus comprising: a chalcogenide memory element; a contact; and a heater element comprising two leg portions, a first leg portion coupled to the contact and the chalcogenide memory element, and only the first leg portion acts as a conductive path between the contact and the chalcogenide memory element.
Claim 3
Dependent Claim
22 words
The apparatus of claim 1 , wherein the heater element comprises polycrystalline silicon and the first leg portion comprises a dopant species.
Claim 4
Dependent Claim
17 words
The apparatus of claim 1 , wherein a second leg portion comprises material having an insulative property.
Claim 5
Independent Claim
121 words
An apparatus comprising: a dedicated memory chip including a plurality of first address lines and a plurality of second address lines, a plurality of programmable elements electrically coupled to respective ones of the plurality of first address lines and the plurality of second address lines, addressing circuitry coupled to the plurality of first address lines and the plurality of second address lines wherein the programmable element comprises: a chalcogenide memory element; a contact; and a heater element comprising two separate leg portions, wherein one of the two leg portions is coupled to the contact and the chalcogenide memory element, and only the one of the two leg portions acts as a conductive path between the contact and the chalcogenide memory element.
Claim 6
Independent Claim
121 words
An apparatus comprising: a dedicated memory chip including a plurality of first address lines and a plurality of second address lines, a plurality of programmable elements electrically coupled to respective ones of the plurality of first address lines and the plurality of second address lines, addressing circuitry coupled to the plurality of first address lines and the plurality of second address lines wherein the programmable element comprises: a chalcogenide memory element; a contact; and a heater element comprising two separate leg portions, wherein one of the two leg portions is coupled to the contact and the chalcogenide memory element, and only the one of the two leg portions acts as a conductive path between the contact and the chalcogenide memory element.
Claim 7
Dependent Claim
25 words
The apparatus of claim 4 , wherein the heater element comprises polycrystalline silicon and the one of the two leg portions comprises a dopant species.
Claim 8
Dependent Claim
20 words
The apparatus of claim 5 , wherein a second of the two leg portions comprises material having an insulative property.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-21 | 2007-01-20 | 2007-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-21 | 2011-01-20 | 2011-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-21 | 2015-01-20 | 2015-07-22 | $7700.00 | Window Closed / Lapsed |