Patent US6580111B2 successfully refreshed from Google Patents.
US6580111B2
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US
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Metal-insulator-metal capacitor
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-05-23
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Granted: 2003-06-17
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Expires: 2021-05-23
Abstract
Abstract A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.
Inventors
- 👤 Wan-Don Kim
- 👤 Jin-Won Kim
- 👤 Seok-jun Won
- 👤 Cha-young Yoo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:52
CPC Classifications
H; H10; H10B; H10B12/00; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6538; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
123 words
A capacitor comprising: a cylindrical TiN lower electrode; a reaction prevention film formed on the TiN lower electrode; a Ta 2 O 5 dielectric film formed on the reaction prevention film; and a CVD-Ru upper electrode formed on the Ta 2 O 5 dielectric film; wherein said reaction prevention film prevents reaction between the TiN lower electrode material and the Ta 2 O 5 dielectric film material during the formation of the Ta 2 O 5 dielectric film and during a heat treatment conducted after formation of the CVD-Ru upper electrode; and wherein the CVD-Ru upper electrode operates as a crystallization seed layer of the Ta 2 O 5 dielectric film during the heat treatment conducted after formation of the CVD-Ru upper electrode.
Claim 2
Dependent Claim
123 words
A capacitor comprising: a cylindrical TiN lower electrode; a reaction prevention film formed on the TiN lower electrode; a Ta 2 O 5 dielectric film formed on the reaction prevention film; and a CVD-Ru upper electrode formed on the Ta 2 O 5 dielectric film; wherein said reaction prevention film prevents reaction between the TiN lower electrode material and the Ta 2 O 5 dielectric film material during the formation of the Ta 2 O 5 dielectric film and during a heat treatment conducted after formation of the CVD-Ru upper electrode; and wherein the CVD-Ru upper electrode operates as a crystallization seed layer of the Ta 2 O 5 dielectric film during the heat treatment conducted after formation of the CVD-Ru upper electrode.
Claim 3
Dependent Claim
19 words
The capacitor of claim 1 wherein the reaction prevention film is formed of a Si 3 N 4 material.
Claim 4
Dependent Claim
34 words
The capacitor of claim 1 wherein the reaction prevention film is formed of a material selected from the group consisting of Al 2 O 3 , TaON, HfO 2 , and ZrO 2 .
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