US6060736A
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1998-07-29
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Granted: 2000-05-09
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Expires: 2018-07-29
Abstract
Abstract The present invention is a semiconductor device having a capacitor employing ferroelectrics as a capacitor insulating film. The semiconductor device comprises a semiconductor substrate 11, an insulating film 12 formed on the semiconductor substrate 11, and a capacitor including (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode 15 formed on the capacitor insulating film 14.
Inventors
- 👤 Hideyuki Noshiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:11
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D1/696
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
98 words
A semiconductor device comprising: (i) a semiconductor substrate; (ii) an insulating film formed on the semiconductor substrate; and (iii) a capacitor including, (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode formed on the capacitor insulating film.
Claim 2
Dependent Claim
98 words
A semiconductor device comprising: (i) a semiconductor substrate; (ii) an insulating film formed on the semiconductor substrate; and (iii) a capacitor including, (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode formed on the capacitor insulating film.
Claim 3
Dependent Claim
46 words
A semiconductor device according to claim 1, wherein a ratio of one or more elements including Pb oriented at A sites of a perovskite crystal structure, which are constituent elements of the ferroelectrics film, to other constituent elements is in a range of 0.9 to 1.4.
Claim 4
Dependent Claim
74 words
A semiconductor device according to claim 2, wherein a ratio of one or more elements including Pb oriented at the A sites relative to other constituent elements is more than one in the ferroelectrics film including Pb having the face orientation (100), and a ratio of elements including Pb oriented at the A sites relative to other constituent elements is less than one in the ferroelectrics film including Pb having the face orientation (111).
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein material of the ferroelectrics film is Pb(Zr,Ti)O 3 or (Pb,La)(Zr,Ti)O 3 .
Claim 6
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein material of the lower electrode and the upper electrode provided in contact with the ferroelectrics film is a Pt film.
Claim 7
Dependent Claim
47 words
A semiconductor device according to claim 1, wherein the ferroelectrics film including Pb having the face orientation (111) is a lowermost layer in the capacitor insulating film, and the ferroelectrics film including Pb having the face orientation (100) is an uppermost layer in the capacitor insulating film.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |