Patent US6573199B2 successfully refreshed from Google Patents.
US6573199B2
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US
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Methods of treating dielectric materials with oxygen, and methods of forming capacitor constructions
Assignee: Micron Technology Inc
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Filing: 2001-08-30
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Granted: 2003-06-03
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Expires: 2021-08-30
Abstract
Abstract The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung Tri Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6542; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/69398
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
108 words
A method of forming a capacitor construction, comprising: forming a first capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode; providing the dielectric material within a reaction chamber; flowing O 3 into the chamber from a source external of the chamber; providing the O 3 at a location proximate the dielectric material within the chamber; providing a laser beam focussed at the location within the chamber, the laser beam generating an activated oxygen species from the O 3 ; contacting the activated oxygen species with the dielectric material; and after the contacting, forming a second capacitor electrode over the dielectric material.
Claim 2
Independent Claim
108 words
A method of forming a capacitor construction, comprising: forming a first capacitor electrode supported by a semiconductor substrate; forming a dielectric material over the first capacitor electrode; providing the dielectric material within a reaction chamber; flowing O 3 into the chamber from a source external of the chamber; providing the O 3 at a location proximate the dielectric material within the chamber; providing a laser beam focussed at the location within the chamber, the laser beam generating an activated oxygen species from the O 3 ; contacting the activated oxygen species with the dielectric material; and after the contacting, forming a second capacitor electrode over the dielectric material.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the O 3 within the chamber diluted to a concentration of from at least about 1% to less than 100% in O 2 .
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the location is from about 2 mm to about 4 mm above a surface of the dielectric material.
Claim 5
Dependent Claim
41 words
The method of claim 1 wherein the dielectric material comprises an oxide of a material, and wherein the activated oxygen species reacts with portions of the material that are not fully oxidized to increase an amount of oxidation of such portions.
Claim 6
Dependent Claim
49 words
The method of claim 1 wherein the dielectric material comprises tantalum oxide, and wherein the activated oxygen species reacts with portions of the tantalum oxide that have a higher ratio of tantalum to oxygen than Ta 2 O 5 to convert such portions to Ta 2 O 5 .
Claim 7
Dependent Claim
38 words
The method of claim 1 wherein the dielectric material comprises silicon and oxygen, and wherein the activated oxygen species reacts with portions of the dielectric material to decrease the ratio of silicon to oxygen within the dielectric material.
Claim 8
Dependent Claim
98 words
The method of claim 1 wherein the dielectric material comprises tantalum oxide over a mass of Si x O y N z , wherein x, y and z are greater than 0, and wherein the activated oxygen species reacts with one or both of (1) portions of the tantalum oxide that have a higher ratio of tantalum to oxygen than Ta 2 O 5 to convert such portions to Ta 2 O 5 ; and (2) portions of the mass of Si x O y N z to decrease the ratio of silicon to oxygen within the mass.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-06-02 | 2006-12-02 | 2007-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-02 | 2010-12-02 | 2011-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-02 | 2014-12-02 | 2015-06-03 | $7700.00 | Window Closed / Lapsed |