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US6541280B2
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High K dielectric film
Assignee: NXP USA Inc
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Filing: 2001-03-20
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Granted: 2003-04-01
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Expires: 2021-03-20
Abstract
Abstract A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
Inventors
- 👤 Vidya S. Kaushik
- 👤 Bich-Yen Nguyen
- 👤 Srinivas V. Pietambaram
- 👤 James Kenyon Schaeffer, III
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/60; H10D64/011; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69396; H10P14/69397; H10D1/00; H10D1/60; H10D1/68; H10D64/01344; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
46 words
A semiconductor structure comprising: a semiconductor substrate; a dielectric layer comprising lanthanum, aluminum, and oxygen over the semiconductor substrate; an electrode layer over the dielectric layer; and an interfacial layer between the semiconductor substrate and the dielectric layer; wherein the interfacial layer comprises oxygen and aluminum.
Claim 2
Dependent Claim
46 words
A semiconductor structure comprising: a semiconductor substrate; a dielectric layer comprising lanthanum, aluminum, and oxygen over the semiconductor substrate; an electrode layer over the dielectric layer; and an interfacial layer between the semiconductor substrate and the dielectric layer; wherein the interfacial layer comprises oxygen and aluminum.
Claim 3
Dependent Claim
13 words
The semiconductor structure of claim 1 wherein the dielectric layer is lanthanum aluminate.
Claim 4
Dependent Claim
12 words
The semiconductor structure of claim 1 wherein the dielectric layer is amorphous.
Claim 5
Dependent Claim
28 words
The semiconductor structure of claim 1 wherein the semiconductor substrate is selected from a group consisting of monocrystalline silicon, gallium arsenide, silicon on insulator, silicon germanium and germanium.
Claim 6
Dependent Claim
15 words
The semiconductor structure of claim 1 , wherein the electrode layer is a gate electrode.
Claim 7
Dependent Claim
23 words
The semiconductor structure of claim 1 wherein one element of the dielectric layer is graded from zero to an amount greater than zero.
Claim 8
Dependent Claim
12 words
The semiconductor structure of claim 6 , wherein the amount is stoichiometric.
Claim 9
Dependent Claim
65 words
A semiconductor structure comprising: a first conductive layer; a dielectric layer comprising lanthanum, aluminum, and oxygen over the first conductive layer; a second conductive layer over the dielectric layer; a first interfacial layer between the first conductive layer and the dielectric layer; and a second interfacial layer between the dielectric layer and the second conductive layer; wherein the first interfacial layer comprises oxygen and aluminum.
Claim 10
Dependent Claim
65 words
A semiconductor structure comprising: a first conductive layer; a dielectric layer comprising lanthanum, aluminum, and oxygen over the first conductive layer; a second conductive layer over the dielectric layer; a first interfacial layer between the first conductive layer and the dielectric layer; and a second interfacial layer between the dielectric layer and the second conductive layer; wherein the first interfacial layer comprises oxygen and aluminum.
Claim 11
Dependent Claim
16 words
The semiconductor structure of claim 8 , wherein the second conductive layer is a floating gate.
Claim 12
Dependent Claim
14 words
The semiconductor structure of claim 8 , wherein the dielectric layer is lanthanum aluminate.
Claim 13
Dependent Claim
12 words
The semiconductor structure of claim 8 wherein the dielectric layer is amorphous.
Claim 14
Dependent Claim
25 words
The semiconductor structure of claim 8 wherein the second interfacial layer comprises an element selected from the group consisting of silicon, nitrogen, oxygen, and aluminum.
Claim 15
Dependent Claim
19 words
The semiconductor structure of claim 8 wherein the first interfacial layer and second interfacial layer are the same material.
Claim 16
Dependent Claim
29 words
The semiconductor structure of claim 8 , wherein the dielectric layer is graded from both the first conductive layer and the second conductive layer from zero to an amount.
Claim 17
Dependent Claim
12 words
The semiconductor structure of claim 14 , wherein the amount is stoichiometric.
Claim 18
Independent Claim
58 words
A method for forming a semiconductor structure comprising: forming a dielectric layer comprising lanthanum, aluminum, and oxygen over a semiconductor substrate by atomic layer chemical vapor deposition; forming an electrode layer over the dielectric layer; and forming a first interfacial layer between the semiconductor substrate and the dielectric layer; wherein the first interfacial layer comprises oxygen and aluminum.
Claim 19
Independent Claim
58 words
A method for forming a semiconductor structure comprising: forming a dielectric layer comprising lanthanum, aluminum, and oxygen over a semiconductor substrate by atomic layer chemical vapor deposition; forming an electrode layer over the dielectric layer; and forming a first interfacial layer between the semiconductor substrate and the dielectric layer; wherein the first interfacial layer comprises oxygen and aluminum.
Claim 20
Dependent Claim
19 words
The method of claim 6 further comprising forming an interfacial layer between the semiconductor substrate and the dielectric layer.
Claim 21
Dependent Claim
24 words
The method of claim 16 further comprising forming a second interfacial layer between the dielectric layer and the electrode layer over the dielectric layer.
Claim 22
Dependent Claim
73 words
A semiconductor device, comprising: a first material selected from a substrate having a semiconductor surface and a conducting layer; a second material, said second material being a layer which is conductive; a third material disposed between the first and second material and comprising lanthanum, aluminum, and oxygen, wherein said third material is amorphous; and a fourth material disposed between the third material and the first material, said fourth material comprising oxygen and aluminum.
Claim 23
Dependent Claim
73 words
A semiconductor device, comprising: a first material selected from a substrate having a semiconductor surface and a conducting layer; a second material, said second material being a layer which is conductive; a third material disposed between the first and second material and comprising lanthanum, aluminum, and oxygen, wherein said third material is amorphous; and a fourth material disposed between the third material and the first material, said fourth material comprising oxygen and aluminum.
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