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US6531718B2
Expired / Lapsed
US
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Semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 2001-01-12
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Granted: 2003-03-11
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Expires: 2021-01-12
Abstract
Abstract A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of Ga atoms; a separating layer including (InXAl1-X)YGa1-YN (where 0<=X<=1, 0<=Y<=1) formed on the buffer layer, wherein surfaces of the separating layer are c facets of In, Al, or Ga atoms; a channel layer including GaN, InGaN, or a combination of GaN and InGaN formed on the separating layer, wherein surfaces of the channel layer are c facets of Ga or In atoms; and an electron supply layer including AlGaN formed on the channel layer, wherein surfaces of the electron supply layer are c facets of Al or Ga atoms, wherein the AlN composition ratio in the separating layer is smaller than the AlN composition ratio in the electron supply layer.
Inventors
- 👤 Kaoru Inoue
- 👤 Katsunori Nishii
- 👤 Hiroyuki Masato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D62/85; H10D62/8503
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
186 words
A semiconductor device comprising: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of Ga atoms; a first electron supply layer including InAlGaN formed on the buffer layer, wherein surfaces of the first electron supply layer are c facets of In, Al, or Ga atoms; a channel layer including GaN, InGaN, or a combination of GaN and InGaN formed on the first electron supply layer, wherein surfaces of the channel layer are c facets of Ga or In atoms; and a second electron supply layer including AlGaN formed on the channel layer, wherein surfaces of the second electron supply layer are c facets of Al or Ga atoms; wherein the AlN composition ratio, the InN composition ratio, and the GaN composition ratio in the first electron supply layer are set such that electrons accumulate in a vicinity of a heterointerface between the first electron supply layer and the channel layer due to a variation in polarization; and a single electron channel in the semiconductor device is provided by providing the InAlGaN first electron supply layer.
Claim 2
Dependent Claim
186 words
A semiconductor device comprising: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of Ga atoms; a first electron supply layer including InAlGaN formed on the buffer layer, wherein surfaces of the first electron supply layer are c facets of In, Al, or Ga atoms; a channel layer including GaN, InGaN, or a combination of GaN and InGaN formed on the first electron supply layer, wherein surfaces of the channel layer are c facets of Ga or In atoms; and a second electron supply layer including AlGaN formed on the channel layer, wherein surfaces of the second electron supply layer are c facets of Al or Ga atoms; wherein the AlN composition ratio, the InN composition ratio, and the GaN composition ratio in the first electron supply layer are set such that electrons accumulate in a vicinity of a heterointerface between the first electron supply layer and the channel layer due to a variation in polarization; and a single electron channel in the semiconductor device is provided by providing the InAlGaN first electron supply layer.
Claim 3
Dependent Claim
179 words
A semiconductor device comprising: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of N atoms; a first electron supply layer including AlGaN formed on the buffer layer, wherein surfaces of the first electron supply layer are c facets of N atoms; a channel layer including GaN, InGaN, or a combination of GaN and InGaN formed on the first electron supply layer, wherein surfaces of the channel layer are c facets of N atoms; and a second electron supply layer including InAlGaN formed on the channel layer, wherein surfaces of the second electron supply layer are c facets of N atoms; wherein the AlN composition ratio, the InN composition ratio, and the GaN composition ratio in the first electron supply layer are set such that electrons accumulate in a vicinity of a heterointerface between the second electron supply layer and the channel layer due to a variation in polarization; and a single electron channel in the semiconductor device is provided by providing the InAlGaN second electron supply layer.
Claim 4
Dependent Claim
179 words
A semiconductor device comprising: a substrate; a buffer layer including GaN formed on the substrate, wherein surfaces of the buffer layer are c facets of N atoms; a first electron supply layer including AlGaN formed on the buffer layer, wherein surfaces of the first electron supply layer are c facets of N atoms; a channel layer including GaN, InGaN, or a combination of GaN and InGaN formed on the first electron supply layer, wherein surfaces of the channel layer are c facets of N atoms; and a second electron supply layer including InAlGaN formed on the channel layer, wherein surfaces of the second electron supply layer are c facets of N atoms; wherein the AlN composition ratio, the InN composition ratio, and the GaN composition ratio in the first electron supply layer are set such that electrons accumulate in a vicinity of a heterointerface between the second electron supply layer and the channel layer due to a variation in polarization; and a single electron channel in the semiconductor device is provided by providing the InAlGaN second electron supply layer.
Claim 5
Dependent Claim
38 words
A semiconductor device according to claim 1 , wherein the InAlGaN first electron supply layer has a composition of(In x Al 1-x ) y Ga 1-Y N, where X is from about 0.3 to about 0.7, and 0≦Y—1.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 3 , wherein Y is from about 0.15 to about 0.6 when the channel layer is made of GaN.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 3 , wherein Y is from about 0 to about 0.6 when the channel layer is made of InGaN.
Claim 8
Dependent Claim
39 words
A semiconductor device according to claim 2 , wherein the InAlGaN second electron supply layer has a composition of (In x Al 1-x ) y Ga 1-Y N, where X is from about 0.3 to about 0.7, and 0≦Y≦1.
Claim 9
Dependent Claim
25 words
A semiconductor device according to claim 6 , wherein Y is from about 0.15 to about 0.6 when the channel layer is made of GaN.
Claim 10
Dependent Claim
25 words
A semiconductor device according to claim 6 , wherein Y is from about 0 to about 0.6 when the channel layer is made of InGaN.
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