Patent US6498381B2 successfully refreshed from Google Patents.
US6498381B2
Expired / Lapsed
US
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Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
Assignee: Adeia Semiconductor Technologies LLC
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Filing: 2001-02-22
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Granted: 2002-12-24
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Expires: 2021-02-22
Abstract
Abstract In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods are also provided.
Inventors
- 👤 Patrick B. Halahan
- 👤 Oleg Siniaguine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:10
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/20; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0245; H10W20/0249; H10W20/20; H10W20/211; H10W20/212; H10W20/2125; H10W20/2128; H10W20/216; H10W44/00; H10W44/20; H10W44/203; H10W44/209; H10W44/212; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
143 words
A circuit structure comprising a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein the conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein at least a portion of the second conductive layer is located at the second side; wherein said portion is not covered, when viewed from the second side, by either said substrate, or said insulating layer, or the first conductive layer; and wherein said portion is not covered, when viewed from the first side, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 2
Dependent Claim
143 words
A circuit structure comprising a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein the conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein at least a portion of the second conductive layer is located at the second side; wherein said portion is not covered, when viewed from the second side, by either said substrate, or said insulating layer, or the first conductive layer; and wherein said portion is not covered, when viewed from the first side, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 3
Dependent Claim
29 words
The circuit structure of claim 1 wherein said portion of the second conductive layer on the second side provides an input, output, or input/output terminal of an integrated circuit.
Claim 4
Dependent Claim
21 words
The circuit structure of claim 1 further comprising an insulator insulating the first conductive layer from the sidewalls of the opening.
Claim 5
Dependent Claim
34 words
The circuit structure of claim 1 wherein the conductive layers include one or more conductive layers surrounding the first conductive layer in the opening and insulated from the first conductive layer in the opening.
Claim 6
Dependent Claim
24 words
The structure of claim 1 wherein the first conductive layer comprises a doped region of the semiconductor substrate on the sidewalls of the opening.
Claim 7
Dependent Claim
70 words
The structure of claim 1 wherein the conductive layers include a third conductive layer surrounded by the first and second conductive layers in the opening and filling the opening, wherein at least a portion of the third conductive layer is not covered, when viewed from either the first side or the second side, by either said substrate, or by said insulating layer, or by the first and second conductive layers.
Claim 8
Dependent Claim
38 words
The circuit structure of claim 4 wherein said portion is not covered, when viewed from either the first side or the second side, by any one of said conductive layers surrounding the first conductive layer in the opening.
Claim 9
Dependent Claim
47 words
The circuit structure of claim 1 wherein the plurality of conductive layers include one or more conductive layers surrounded by the first and second conductive layers in the opening and separated from the first and second conductive layers by one or more insulating layers in the opening.
Claim 10
Dependent Claim
48 words
The circuit structure of claim 1 wherein the plurality of conductive layers include two or more conductive layers surrounded by the first and second conductive layers in the opening and separated from each other, and from the first and second conductive layers, by insulating layers in the opening.
Claim 11
Dependent Claim
22 words
The circuit structure of claim 1 further comprising circuitry for holding the first conductive layer in the opening at a constant voltage.
Claim 12
Dependent Claim
36 words
The circuit structure of claim 1 wherein the substrate has been processed to form at least a poriton of a circuit element over the first side of the substrate and a transistor region in the substrate.
Claim 13
Dependent Claim
137 words
A circuit structure comprising: a semiconductor substrate which has been processed to form at least a portion of a circuit element above the substrate; an opening passing through the substrate between a top side of the substrate and a bottom side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein he conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein at least a portion of the second conductive layer is located on the bottom side of the substrate; wherein said portion is not covered, when viewed from below the substrate, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 14
Dependent Claim
137 words
A circuit structure comprising: a semiconductor substrate which has been processed to form at least a portion of a circuit element above the substrate; an opening passing through the substrate between a top side of the substrate and a bottom side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein he conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein at least a portion of the second conductive layer is located on the bottom side of the substrate; wherein said portion is not covered, when viewed from below the substrate, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 15
Dependent Claim
13 words
The circuit structure of claim 12 wherein the substrate comprises a transistor region.
Claim 16
Dependent Claim
32 words
The circuit structure of claim 12 wherein said portion of the second conductive layer on the bottom side of the substrate provides an input, output, or input/output terminal of an integrated circuit.
Claim 17
Dependent Claim
21 words
The circuit structure of claim 12 further comprising an insulator insulating the first conductive layer from the sidewalls of the opening.
Claim 18
Dependent Claim
64 words
The circuit structure of claim 12 wherein: the conductive layers include one or more conductive layers surrounding the first conductive layer in the opening and insulated from the first conductive layer in the opening; and said portion is not covered, when viewed from the bottom side of the substrate, by any one of said conductive layers surrounding the first conductive layer in the opening.
Claim 19
Dependent Claim
24 words
The structure of claim 12 wherein the first conductive layer comprises a doped region of the semiconductor substrate on the sidewalls of the opening.
Claim 20
Dependent Claim
68 words
The structure of claim 12 wherein the conductive layers include a third conductive layer surrounded by the first and second conductive layers in the opening and filling the opening, wherein at least a portion of the third conductive layer is not covered, when viewed from the bottom side of the substrate, by either said substrate, or by said insulating layer, or by the first and second conductive layers.
Claim 21
Dependent Claim
47 words
The circuit structure of claim 12 wherein the plurality of conductive layers include one or more conductive layers surrounded by the first and second conductive layers in the opening and separated from the first and second conductive layers by one or more insulating layers in the opening.
Claim 22
Dependent Claim
48 words
The circuit structure of claim 12 wherein the plurality of conductive layers include two or more conductive layers surrounded by the first and second conductive layers in the opening and separated from each other, and from the first and second conductive layers, by insulating layers in the opening.
Claim 23
Dependent Claim
22 words
The circuit structure of claim 12 further comprising circuitry for holding the first conductive layer in the opening at a constant voltage.
Claim 24
Dependent Claim
28 words
The circuit structure of claim 4 further comprising an insulator insulating the sidewalls of the opening from the one or more conductive layers surrounding the first conductive layer.
Claim 25
Dependent Claim
21 words
The circuit structure of claim 2 wherein said terminal protrudes out of the opening on the second side of the substrate.
Claim 26
Dependent Claim
39 words
The circuit structure of claim 23 wherein the insulating layer protrudes out of the opening on the second side of the substrate, but the protrusion of the insulating layer is not as large as the protrusion of said terminal.
Claim 27
Dependent Claim
42 words
The circuit structure of claim 24 wherein the first conductive layer protrudes out of the opening on the second side of the substrate, but the protrusion of the first conductive layer is not as large as the protrusion of the insulating layer.
Claim 28
Dependent Claim
34 words
The circuit structure of claim 23 wherein the first conductive layer does not protrude out of the opening on the second side but is recessed on the second side relative to the semiconductor substrate.
Claim 29
Dependent Claim
22 words
The circuit structure of claim 1 wherein the second conductive layer protrudes out of the opening on the first and second sides.
Claim 30
Dependent Claim
26 words
The circuit structure of claim 27 wherein the second conductive layer protrudes out of the insulating layer in the opening on the first and second sides.
Claim 31
Dependent Claim
26 words
The circuit structure of claim 28 wherein the insulating layer protrudes out of the first conductive layer in the opening on the first and second sides.
Claim 32
Dependent Claim
22 words
The circuit structure of claim 29 wherein the first conductive layer protrudes out of the opening on the first and second sides.
Claim 33
Dependent Claim
33 words
The circuit structure of claim 27 wherein the first conductive layer does not protrude out of the opening on the second side but is recessed relative to the substrate on the second side.
Claim 34
Dependent Claim
28 words
The circuit structure of claim 16 further comprising an insulator insulating the sidewalls of the opening from the one or more conductive layers surrounding the first conductive layer.
Claim 35
Dependent Claim
23 words
The circuit structure of claim 12 wherein the second conductive layer protrudes out of the opening on the second side of the substrate.
Claim 36
Dependent Claim
41 words
The circuit structure of claim 33 wherein the insulating layer protrudes out of the opening on the second side of the substrate, but the protrusion of the insulating layer is not as large as the protrusion of the second conductive layer.
Claim 37
Dependent Claim
42 words
The circuit structure of claim 34 wherein the first conductive layer protrudes out of the opening on the second side of the substrate, but the protrusion of the first conductive layer is not as large as the protrusion of the insulating layer.
Claim 38
Dependent Claim
34 words
The circuit structure of claim 12 wherein the first conductive layer does not protrude out of the opening on the second side but is recessed on the second side relative to the semiconductor substrate.
Claim 39
Dependent Claim
134 words
A circuit structure comprising a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein the conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein the first conductive layer extends out of the opening over the first side of the substrate; wherein at least a portion of the second conductive layer is located at the second side; wherein said portion is not covered, when viewed from the second side, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 40
Dependent Claim
134 words
A circuit structure comprising a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers which overlay sidewalls of the opening, wherein the conductive layers include a first conductive layer and a second conductive layer which are separated by an insulating layer in the opening; wherein the first conductive layer surrounds the second conductive layer in the opening; wherein the first conductive layer extends out of the opening over the first side of the substrate; wherein at least a portion of the second conductive layer is located at the second side; wherein said portion is not covered, when viewed from the second side, by either said substrate, or said insulating layer, or the first conductive layer.
Claim 41
Dependent Claim
24 words
The circuit structure of claim 37 wherein the second conductive layer does not overlie the substrate on the second side outside of the opening.
Claim 42
Dependent Claim
24 words
The circuit structure of claim 38 wherein the first conductive layer does not overlie the substrate on the second side outside of the opening.
Claim 43
Dependent Claim
20 words
The circuit structure of claim 37 wherein the opening is wider at the first side than at the second side.
Claim 44
Dependent Claim
13 words
The circuit structure of claim 37 wherein the substrate comprises a transistor region.
Claim 45
Dependent Claim
32 words
The circuit structure of claim 37 wherein said portion of the second conductive layer on the second side of the substrate provides an input, output, or input/output terminal of an integrated circuit.
Claim 46
Dependent Claim
21 words
The circuit structure of claim 37 further comprising an insulator insulating the first conductive layer from the sidewalls of the opening.
Claim 47
Dependent Claim
64 words
The circuit structure of claim 37 wherein: the conductive layers include one or more conductive layers surrounding the first conductive layer in the opening and insulated from the first conductive layer in the opening; and said portion is not covered, when viewed from the second side of the substrate, by any one of said conductive layers surrounding the first conductive layer in the opening.
Claim 48
Dependent Claim
24 words
The structure of claim 37 wherein the first conductive layer comprises a doped region of the semiconductor substrate on the sidewalls of the opening.
Claim 49
Dependent Claim
68 words
The structure of claim 37 wherein the conductive layers include a third conductive layer surrounded by the first and second conductive layers in the opening and filling the opening, wherein at least a portion of the third conductive layer is not recovered, when viewed from the second side of the substrate, by either said substrate, or by said insulating layer, or by the first and second conductive layers.
Claim 50
Dependent Claim
47 words
The circuit structure of claim 37 wherein the plurality of conductive layers include one or more conductive layers surrounded by the first and second conductive layers in the opening and separated from the first and second conductive layers by one or more insulating layers in the opening.
Claim 51
Dependent Claim
48 words
The circuit structure of claim 37 wherein the plurality of conductive layers include two or more conductive layers surrounded by the first and second conductive layers in the opening and separated from each other, and from the first and second conductive layers, by insulating layers in the opening.
Claim 52
Dependent Claim
22 words
The circuit structure of claim 37 further comprising circuitry for holding the first conductive layer in the opening at a constant voltage.
Claim 53
Dependent Claim
27 words
The circuit structure of claim 49 further comprising insulator insulating the sidewalls of the opening from the one or more conductive layers surrounding the first conductive layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-12-23 | 2006-06-24 | 2006-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-23 | 2010-06-24 | 2010-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-12-23 | 2014-06-24 | 2014-12-24 | $7700.00 | Window Closed / Lapsed |