US6016012A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin liner layer providing reduced via resistance
Assignee: Monterey Research LLC
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Filing: 1996-11-05
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Granted: 2000-01-18
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Expires: 2016-11-05
Abstract
Abstract The present invention relates to semiconductor device containing a via and a method of forming a via in a semiconductor device.
Inventors
- 👤 Ahmad Chatila
- 👤 Kuantai Yeh
- 👤 James M. Cleeves
- 👤 Daniel Arnzen
- 👤 Roger Caldwell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
142 words
A semiconductor device, comprising: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; and v) a second conductive material layer disposed between said liner layer and a bottom of said channel, wherein said second conductive material layer has a thickness ≦500 Å, wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≧500 Å and a thickness at a bottom of said channel of <100 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 2
Dependent Claim
142 words
A semiconductor device, comprising: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; and v) a second conductive material layer disposed between said liner layer and a bottom of said channel, wherein said second conductive material layer has a thickness ≦500 Å, wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≧500 Å and a thickness at a bottom of said channel of <100 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 3
Dependent Claim
35 words
The semiconductor device of claim 1, further comprising a second conductive material layer disposed between said liner layer and a bottom of said channel wherein said second conductive material layer has a thickness ≦500 Å.
Claim 4
Dependent Claim
17 words
The semiconductor device of claim 1, further comprising a third conductive layer disposed below said dielectric material.
Claim 5
Dependent Claim
17 words
The semiconductor device of claim 1, further comprising a third conductive layer disposed above said dielectric material.
Claim 6
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said conductive material layer comprises tungsten or aluminum.
Claim 7
Dependent Claim
42 words
The semiconductor device of claim 1, wherein said second conductive material layer comprises an element selected from the group consisting of titanium, aluminum, chromium, tungsten, molybdenum, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold and silver or an alloy thereof.
Claim 8
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said via has an aspect ratio of ≧1.5.
Claim 9
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said channel has an aspect ratio of ≧1.7.
Claim 10
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said channel has an aspect ratio of ≧2.0.
Claim 11
Dependent Claim
20 words
The semiconductor device of claim 1 wherein said channel forms a via which has a resistivity of ≦10 3 Ω·cm.
Claim 12
Dependent Claim
20 words
The semiconductor device of claim 1 wherein said channel forms a via which has a resistivity of ≦10 2 Ω·cm.
Claim 13
Dependent Claim
20 words
The semiconductor device of claim 1 wherein said channel forms a via which has a resistivity of ≦10 1 Ω·cm.
Claim 14
Dependent Claim
13 words
The semiconductor device of claim 1 comprising at least two of said channels.
Claim 15
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said liner layer has a thickness <450 Å.
Claim 16
Dependent Claim
15 words
The semiconductor device of claim 1, wherein said liner layer has a thickness <400 Å.
Claim 17
Dependent Claim
16 words
The semiconductor device of claim 1, wherein said liner layer has a thickness of 100-300 Å.
Claim 18
Dependent Claim
22 words
The semiconductor device of claim 1, wherein said liner layer has a thickness at a bottom of said channel of <500 Å.
Claim 19
Dependent Claim
22 words
The semiconductor device of claim 1, wherein said liner layer has a thickness at a bottom of said channel of <300 Å.
Claim 20
Dependent Claim
19 words
The semiconductor device of claim 1, wherein said liner layer is deposited by a technique other than collimated sputtering.
Claim 21
Dependent Claim
24 words
The semiconductor device of claim 1, wherein said liner layer comprises an element selected from the group consisting of titanium-tungsten alloy and titanium nitride.
Claim 22
Dependent Claim
21 words
The semiconductor device of claim 1, wherein said liner layer comprises an element selected from the group consisting of titanium-tungsten alloy.
Claim 23
Dependent Claim
115 words
A semiconductor device, comprising: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; and iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of about 0 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 24
Dependent Claim
115 words
A semiconductor device, comprising: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; and iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of about 0 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 25
Independent Claim
184 words
A method of forming a semiconductor device comprising a via comprising: a) depositing a liner layer having a thickness <500 Å in a via channel having an aspect ratio of ≧1.3; and b) filling said via channel with a conductive material, wherein said semiconductor device comprises: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; and v) a second conductive material layer disposed between said liner layer and a bottom of said channel, wherein said second conductive material layer has a thickness ≦500 Å, wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of <100 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 26
Independent Claim
184 words
A method of forming a semiconductor device comprising a via comprising: a) depositing a liner layer having a thickness <500 Å in a via channel having an aspect ratio of ≧1.3; and b) filling said via channel with a conductive material, wherein said semiconductor device comprises: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; and v) a second conductive material layer disposed between said liner layer and a bottom of said channel, wherein said second conductive material layer has a thickness ≦500 Å, wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of <100 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 27
Independent Claim
157 words
A method of forming a semiconductor device comprising a via comprising: a) depositing a liner layer having a thickness <500 Å in a via channel having an aspect ratio of ≧1.3; and b) filling said via channel with a conductive material, wherein said semiconductor device comprises: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; and iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of about 0 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
Claim 28
Independent Claim
157 words
A method of forming a semiconductor device comprising a via comprising: a) depositing a liner layer having a thickness <500 Å in a via channel having an aspect ratio of ≧1.3; and b) filling said via channel with a conductive material, wherein said semiconductor device comprises: i) a dielectric material; ii) a channel formed in said dielectric material; iii) a conductive material layer in said channel; and iv) a liner layer in said channel between said dielectric material and said conductive material deposited on a surface of said dielectric material; wherein said channel has an aspect ratio of ≧1.3 and said liner layer has a thickness ≦500 Å and a thickness at a bottom of said channel of about 0 Å, and wherein said liner layer comprises an element selected from the group consisting of zirconium, hafnium, aluminum, chromium, molybdenum, tungsten, copper, nickel, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, gold, silver, titanium-tungsten alloy and titanium nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |