US5569961A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a multi-layer metallization structure
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-06-07
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Granted: 1996-10-29
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Expires: 2015-06-07
Abstract
Abstract The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.
Inventors
- 👤 Sang-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/44; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/047; H10W20/048; H10W20/052; H10W20/0523; H10W20/056; H10W20/057; H10W20/063; H10W20/0633; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
186 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; an opening formed in said insulating layer, said opening including a bottom surface comprised of a portion of said substrate; a composite diffusion barrier layer formed on said bottom surface of said opening, said composite diffusion barrier layer being comprised of at least first and second sub-layers; a nucleation layer formed on said composite diffusion barrier layer and sidewalls of said insulating layer defining said opening, said nucleation layer including wing portions extending laterally outwardly beyond an upper edge of said opening and on adjacent surface portions of said insulating layer; a first metal layer formed on said nucleation layer, said first metal layer including a plug portion filling said opening and wing portions which extend laterally outwardly beyond an upper edge of said opening and on said wing portions of said nucleation layer, said plug portion and said wing portions of said first metal layer being continuous and comprised of the same material; an intermediate layer formed on said first metal layer; and, a second metal layer formed on said intermediate layer.
Claim 2
Dependent Claim
186 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; an opening formed in said insulating layer, said opening including a bottom surface comprised of a portion of said substrate; a composite diffusion barrier layer formed on said bottom surface of said opening, said composite diffusion barrier layer being comprised of at least first and second sub-layers; a nucleation layer formed on said composite diffusion barrier layer and sidewalls of said insulating layer defining said opening, said nucleation layer including wing portions extending laterally outwardly beyond an upper edge of said opening and on adjacent surface portions of said insulating layer; a first metal layer formed on said nucleation layer, said first metal layer including a plug portion filling said opening and wing portions which extend laterally outwardly beyond an upper edge of said opening and on said wing portions of said nucleation layer, said plug portion and said wing portions of said first metal layer being continuous and comprised of the same material; an intermediate layer formed on said first metal layer; and, a second metal layer formed on said intermediate layer.
Claim 3
Dependent Claim
19 words
The semiconductor device as set forth in claim 1, wherein said nucleation layer is comprised of a silylation layer.
Claim 4
Dependent Claim
17 words
The semiconductor device as set forth in claim 1, wherein said nucleation layer is made of silicon.
Claim 5
Dependent Claim
17 words
The semiconductor device as set forth in claim 1, wherein said nucleation layer is made of copper.
Claim 6
Dependent Claim
19 words
The semiconductor device as set forth in claim 1, wherein said nucleation layer is made of a silicon-copper composite.
Claim 7
Dependent Claim
42 words
The semiconductor device as set forth in claim 1, wherein said first sub-layer of said composite diffusion barrier layer is comprised of a refractory metal, and said second sub-layer of said composite diffusion barrier layer is comprised of a refractory metal composite.
Claim 8
Dependent Claim
23 words
The semiconductor device as set forth in claim 6, wherein said refractory metal is titanium, and said refractory metal composite is titanium nitride.
Claim 9
Dependent Claim
39 words
The semiconductor device as set forth in claim 1, wherein said first and second sub-layers of said composite diffusion barrier layer are each comprised of a material selected from the group consisting of refractory metals and refractory metal composites.
Claim 10
Dependent Claim
20 words
The semiconductor device as set forth in claim 1, wherein the composite diffusion barrier layer further comprises an oxide layer.
Claim 11
Dependent Claim
16 words
The semiconductor device as set forth in claim 1, wherein said substrate comprises a semiconductor substrate.
Claim 12
Dependent Claim
16 words
The semiconductor device as set forth in claim 9, wherein said substrate comprises a semiconductor substrate.
Claim 13
Dependent Claim
19 words
The semiconductor device as set forth in claim 1 wherein said nucleation layer is comprised of a hydrogen-treated layer.
Claim 14
Dependent Claim
24 words
The semiconductor device as set forth in claim 1, wherein said intermediate layer comprises a further diffusion barrier layer having a <111> crystal orientation.
References Cited (Backward Citations)
JPS61183942A
Cited
JPS62109341A
Cited
JPS62132348A
Cited
JPS6397762A
Cited
JPS6399546A
Cited
US4910580A
Cited
JPH026052A
Cited
EP0354717A2
Cited
JPH02159065A
Cited
US5254872A
Cited
EP0430403A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-29 | 2000-04-29 | 2000-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-29 | 2004-04-29 | 2004-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-29 | 2008-04-29 | 2008-10-29 | $7700.00 | Window Closed / Lapsed |