US5691571A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having fine contact hole with high aspect ratio
Assignee: Renesas Electronics Corp
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Filing: 1995-12-26
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Granted: 1997-11-25
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Expires: 2015-12-26
Abstract
Abstract A semiconductor device includes at least one hole formed on a semiconductor substrate. A barrier metal is formed on at least one portion in contact with the semiconductor substrate in the hole. A metal interconnection is constituted by two layers including a first Al-containing metal film formed on the barrier metal, and a second Al-containing metal film formed on the first Al-containing metal film and having a melting point lower than the melting point of the first Al-containing metal film.
Inventors
- 👤 Kazuyuki Hirose
- 👤 Kuniko Kikuta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/41; H10W20/425; H10D62/832
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
104 words
A semiconductor device comprising: at least one hole formed on a semiconductor substrate; a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole; and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn alloy film having an Sn concentration of between 0.1 and 98 atom %.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising: at least one hole formed on a semiconductor substrate; a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole; and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn alloy film having an Sn concentration of between 0.1 and 98 atom %.
Claim 3
Dependent Claim
32 words
A device according to claim 1, wherein said first Al-containing metal film comprises a material selected from the group consisting of Al alone, an Al--Si alloy film, and an Al--Si--Cu alloy film.
Claim 4
Dependent Claim
21 words
A device according to claim 2, wherein the Si concentration in said Al--Si alloy film is 0.2 to 2 atom %.
Claim 5
Dependent Claim
115 words
A semiconductor device comprising: at least one hole formed on a semiconductor substrate; a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole; and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn--Cu alloy film having an Sn concentration of between 0.1 and 98 atom %, and a Cu concentration of between 0.1 and 2 atom %.
Claim 6
Dependent Claim
115 words
A semiconductor device comprising: at least one hole formed on a semiconductor substrate; a barrier metal formed on at least a portion in contact with said semiconductor substrate in the hole; and a metal interconnection constituted by two layers, which consists of a first Al-containing metal film formed on said barrier metal, and a second Al-containing metal film subsequently formed on said first Al-containing metal film and having a melting point lower than a melting point of said first Al-containing metal film, wherein said second Al-containing metal film comprises an Al--Sn--Cu alloy film having an Sn concentration of between 0.1 and 98 atom %, and a Cu concentration of between 0.1 and 2 atom %.
Claim 7
Dependent Claim
32 words
A device according to claim 4, wherein said first Al-containing metal film comprises a material selected from the group consisting of Al alone, an Al--Si alloy film, and an Al--Si--Cu alloy film.
Claim 8
Dependent Claim
31 words
A device according to claim 5, wherein the Si concentration in said Al--Si--Cu alloy film is 0.1 to 2 atom %, and the Cu concentration is 0.1 to 2 atom %.
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| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
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