US5079615A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor for a semiconductor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-14
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Granted: 1992-01-07
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Expires: 2010-08-14
Abstract
Abstract An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Takashi Inujima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:12
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/48; C23C16/482; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
85 words
A capacitor formed in a substrate comprising: a trench formed within a semiconductor substrate and having an opening at a surface of said substrate; an insulating film provided on the inside surface of said trench; and a capacitor extending in said trench, wherein said insulating film intervenes between said inside surface and said capacitor and said trench has an area, when measured with respect to a plane parallel to the surface of said substrate in its inner position, greater than the area of siad opening.
Claim 2
Dependent Claim
85 words
A capacitor formed in a substrate comprising: a trench formed within a semiconductor substrate and having an opening at a surface of said substrate; an insulating film provided on the inside surface of said trench; and a capacitor extending in said trench, wherein said insulating film intervenes between said inside surface and said capacitor and said trench has an area, when measured with respect to a plane parallel to the surface of said substrate in its inner position, greater than the area of siad opening.
Claim 3
Dependent Claim
25 words
The capacitor of claim 1 wherein said capacitor comprises a pair of electrode layers and a dielectric layer disposed between said pair of electrode layers.
Claim 4
Dependent Claim
15 words
The capacitor of claim 2 wherein each of said electrode layers comprises a conducting material.
Claim 5
Dependent Claim
15 words
The capacitor of claim 2 wherein each of said electrode layers comprises a semiconductor material.
Claim 6
Dependent Claim
23 words
The capacitor of claim 2 wherein said electrode layers are a layer comprising a conducting material and a layer comprising a semiconductor material.
Claim 7
Dependent Claim
23 words
The capacitor of claim 2 wherein said dielectric layer comprises a material selected from the group consisting of silicon oxide and silicon nitride.
Claim 8
Dependent Claim
13 words
The capacitor of claim 1 wherein said trench laterally extends at its bottom.
Claim 9
Dependent Claim
44 words
A capacitor formed in a substrate comprising: a trench formed within a semiconductor substrate; an insulating film provided on the inside surface of said trench; and a capacitor extending in said trench, wherein said insulating film intervenes between said inside surface and said capacitor.
Claim 10
Dependent Claim
44 words
A capacitor formed in a substrate comprising: a trench formed within a semiconductor substrate; an insulating film provided on the inside surface of said trench; and a capacitor extending in said trench, wherein said insulating film intervenes between said inside surface and said capacitor.
Claim 11
Dependent Claim
13 words
The capacitor of claim 8 wherein said capacitor further extends outside said trench.
Claim 12
Dependent Claim
25 words
The capacitor of claim 8 wherein said capacitor comprises a pair of electrode layers and a dielectric layer disposed between siad pair of electrode layers.
Claim 13
Dependent Claim
15 words
The capacitor of claim 10 wherein each of said electrode layers comprises a conducting material.
Claim 14
Dependent Claim
15 words
The capacitor of claim 10 wherein each of said electrode layers comprises a semiconductor material.
Claim 15
Dependent Claim
23 words
The capacitor of claim 10 wherein said electrode layers are a layer comprising a conducting material and a layer comprising a semiconductor material.
Claim 16
Dependent Claim
13 words
The capacitor of claim 10 wherein each of said electrode layers comprises silicon.
Claim 17
Dependent Claim
14 words
The capacitor of claim 10 wherein each of said electrode layers comprises titanium silicide.
Claim 18
Dependent Claim
20 words
The capacitor of claim 10 wherein said electrode layers are a layer comprising silicon and a layer comprising titanium silicide.
Claim 19
Dependent Claim
12 words
The capacitor of claim 8 wherein said insulating film comprises silicon oxide.
Claim 20
Dependent Claim
17 words
The capacitor of claim 10 wherein at least one of said electrode layers is doped with phosphorus.
Claim 21
Dependent Claim
17 words
The capacitor of claim 10 wherein at least one of said electrode layers is a polysilicon layer.
Claim 22
Dependent Claim
23 words
The capacitor of claim 10 wherein said dielectric layer comprises a material selected from the group consisting of silicon oxide and silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |