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US4861622A
Expired / Lapsed
US
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Method for forming a film coat on the inside of a depression
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1987-12-24
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Granted: 1989-08-29
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Expires: 2007-12-24
Abstract
Abstract An improved method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave. A semiconductor device is thereafter formed on the inside of the cave.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Takashi Inujima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:11
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/48; C23C16/482; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
96 words
A method for forming a film coated on the inside of a depression formed on a substrate other than the bottom surface of said depression, the width of said depression being less than 2.5 micrometers, said method comprising the steps of: disposing said substrate in a reaction chamber; depositing a uniform film on the inside of said depression by photo CVD in such a deposition condition that said film is formed by the deposited material whose excited energy is attributed mainly to photo energy; and anisotropically etching the film deposited on the bottom of said depression.
Claim 2
Independent Claim
96 words
A method for forming a film coated on the inside of a depression formed on a substrate other than the bottom surface of said depression, the width of said depression being less than 2.5 micrometers, said method comprising the steps of: disposing said substrate in a reaction chamber; depositing a uniform film on the inside of said depression by photo CVD in such a deposition condition that said film is formed by the deposited material whose excited energy is attributed mainly to photo energy; and anisotropically etching the film deposited on the bottom of said depression.
Claim 3
Dependent Claim
32 words
A method of claim 1 further comprising another step of anisotropically etching the bottom of said substrate in the direction parallel with the surface of said substrate to constitute an inner cavity.
Claim 4
Dependent Claim
30 words
A method of claim 2 further comprising steps of depositing an insulating film and a conductive film to constitute a capacitance in said depression by photo CVD in said condition.
Claim 5
Dependent Claim
23 words
A method of claim 1 wherein said film is insulating, and said substrate is an impurity semiconductor substrate of a first conductivity type.
Claim 6
Dependent Claim
45 words
A method of claim 4 further comprising a step of diffusing an impurity with said film as a mask into said substrate through the bottom of said depression to form an impurity semiconductor region of a second conductivity type opposed to said first conductivity type.
Claim 7
Dependent Claim
40 words
A method of claim 5 wherein said substrate is provided with a semiconductor region of said second conductivity type on the upper portion of said depression in a position distant from the diffused region of the bottom of said depression.
Claim 8
Dependent Claim
26 words
A method of claim 5 further comprising a step of forming a conductive film on said film as a gate electrode to constitute a MOS FET.
Claim 9
Dependent Claim
18 words
A method of claim 7 further comprising a step of forming a passivation film overlying the formed substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |