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Method to reduce the moisture content in an organic low dielectric constant material
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-11-03
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Granted: 2002-06-11
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Expires: 2019-11-03
Abstract
Abstract A method of forming an organic low k layer, for use as an interlevel dielectric layer in semiconductor integrated circuits, has been developed. An organic low k layer, such as a poly arylene ether layer, with a dielectric constant between about 2.6 to 2.8, is applied on an underlying metal interconnect pattern. The moisture contained in the as applied, organic low k layer, or the moisture absorbed by the organic low k layer, due to exposure to the environment, is then reduced via a high density plasma treatment, performed in a nitrogen ambient. The reduction in moisture can be accomplished, even when the organic low k layer had been exposed to the environment for a period of time as great as three months. The dielectric constant, of the organic low k layer, remains unchanged, as a result of the high density plasma treatment.
Inventors
- 👤 Weng Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/096; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
106 words
A method of forming an organic low dielectric constant, (low k), layer, on a semiconductor substrate, featuring a final nitrogen procedure used to remove water from said organic low k layer which had previously experienced an initial curing procedure performed between about 0 to 3 months prior to said final nitrogen procedure, comprising the steps of: providing underlying metal interconnect structures; applying said organic low k layer on said underlying metal interconnect structures, and between said underlying metal interconnect structures; performing said initial curing procedure to said organic low k layer; and performing said final nitrogen procedure to remove water from said organic low k layer.
Claim 2
Independent Claim
106 words
A method of forming an organic low dielectric constant, (low k), layer, on a semiconductor substrate, featuring a final nitrogen procedure used to remove water from said organic low k layer which had previously experienced an initial curing procedure performed between about 0 to 3 months prior to said final nitrogen procedure, comprising the steps of: providing underlying metal interconnect structures; applying said organic low k layer on said underlying metal interconnect structures, and between said underlying metal interconnect structures; performing said initial curing procedure to said organic low k layer; and performing said final nitrogen procedure to remove water from said organic low k layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 , wherein said metal interconnect structures are comprised of a metal chosen from a group that includes, copper, aluminum-copper, or tungsten.
Claim 4
Dependent Claim
44 words
The method of claim 1 , wherein said organic low k layer is comprised of a poly arylene ether layer, obtained via spin on procedures, to a thickness between about 3000 to 10000 Angstroms, and with a dielectric constant between about 2.6 to 2.8.
Claim 5
Dependent Claim
63 words
The method of claim 1 , wherein said organic low k layer can be comprised of a material chosen from a group that includes, FLARE, (FLuorinated polyARylene Ether), HOSP, (Hydrido Organo Siloxane Polymer), or LOSP, (Low Organic Siloxane Polymer), obtained via spin on procedures, at a thickness between about 3000 to 10000 Angstroms, and with a dielectric constant between about 2.6 to 2.8.
Claim 6
Dependent Claim
42 words
The method of claim 1 , wherein said initial curing procedure performed on said organic low k layer, is performed at a temperature between about 350 to 450° C., in a nitrogen ambient, for a time between about 30 to 120 min.
Claim 7
Dependent Claim
67 words
The method of claim 1 , wherein said final nitrogen procedure, used to remove water molecules from said organic low k layer, is performed using a high density plasma procedure, at a temperature between about 350 to 450° C., at a power between about 250 to 1000 watts, at a pressure between about 50 to 200 mtorr, and for a time between about 0.5 to 2.0 min.
Claim 8
Dependent Claim
28 words
The method of claim 1 , wherein the dielectric constant of said organic low k layer, after subjection to said nitrogen treatment, is between about 2.6 to 2.8.
Claim 9
Independent Claim
185 words
A method of removing water from an organic low k layer via a combination of nitrogen treatments, featuring an initial nitrogen curing procedure performed after application of said first organic low k layer, and a final nitrogen procedure which can be performed between 0 to 3 months after said initial nitrogen curing procedure and still remove absorbed water from previously treated, said organic low k layer, comprising the steps of: providing underlying metal interconnect structures, overlying, and contacting, underlying conductive regions; applying a first organic low k layer, on said underlying metal interconnect structures, and between said underlying metal interconnect structures; performing said initial nitrogen curing procedure, to remove solvents from said first organic low k layer; and performing said final nitrogen procedure, in a high density plasma tool, to remove said water absorbed in said first organic low k layer, during application of said first organic low k layer, and for water absorbed by said first organic low k layer in a time period for as long as three months after said initial nitrogen curing procedure, resulting in a second organic low k layer.
Claim 10
Independent Claim
185 words
A method of removing water from an organic low k layer via a combination of nitrogen treatments, featuring an initial nitrogen curing procedure performed after application of said first organic low k layer, and a final nitrogen procedure which can be performed between 0 to 3 months after said initial nitrogen curing procedure and still remove absorbed water from previously treated, said organic low k layer, comprising the steps of: providing underlying metal interconnect structures, overlying, and contacting, underlying conductive regions; applying a first organic low k layer, on said underlying metal interconnect structures, and between said underlying metal interconnect structures; performing said initial nitrogen curing procedure, to remove solvents from said first organic low k layer; and performing said final nitrogen procedure, in a high density plasma tool, to remove said water absorbed in said first organic low k layer, during application of said first organic low k layer, and for water absorbed by said first organic low k layer in a time period for as long as three months after said initial nitrogen curing procedure, resulting in a second organic low k layer.
Claim 11
Dependent Claim
26 words
The method of claim 8 , wherein said metal interconnect structures are comprised of a metal chosen from a group that includes copper, aluminum-copper, or tungsten.
Claim 12
Dependent Claim
42 words
The method of claim 8 , wherein said first organic low k layer is a poly arylene ether layer, obtained via spin on procedures, to a thickness between about 3000 to 10000 Angstroms, with a dielectric constant between about 2.6 to 2.7.
Claim 13
Dependent Claim
40 words
The method of claim 8 , wherein said first organic low k layer can be comprised of a material chosen from a group that includes FLARE, (Fluorinated polyARylene Ether), HOSP, (Hydrido Organo Siloxane Polymer), and LOSP, (Low Organic Siloxane Polymer).
Claim 14
Dependent Claim
29 words
The method of claim 8 , wherein said first organic low k layer is an organic low k layer, comprised with water molecules in the organic low k layer.
Claim 15
Dependent Claim
44 words
The method of claim 8 , wherein said initial nitrogen curing procedure, performed to said first organic low k layer, is performed at a temperature between about 350 to 450° C., for a time between about 30 to 120 min, in a nitrogen ambient.
Claim 16
Dependent Claim
71 words
The method of claim 8 , wherein said final nitrogen procedure is a high density plasma treatment, performed to said first organic low k layer, in a high density plasma tool, in a nitrogen ambient, at a temperature between about 350 to 450° C., at a power between about 250 to 1000 watts, at a pressure between about 50 to 200 mtorr, for a time between about 0.5 to 2.0 min.
Claim 17
Dependent Claim
41 words
The method of claim 8 , wherein said second organic low k layer is a poly arylene ether layer, with a lower water content then said first organic low k layer, and with a dielectric constant between about 2.6 to 2.8.
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